An ultra-high speed laser cladding device and a process based on the dual suppression of magnetic force and centrifugal force are provided, including a laser generator, a spectrometer, a powder device, a rotary tool and a magnetic field generator. The substrate is installed in the rotary tooling, through the driving device to rotate it. The magnetic field generator is used to generate a magnetic field in the rotary cylinder. The laser generator produces the first laser beam and the second laser beam with different energy through the spectrometer. They are both focused on the surface of the substrate. The powder conveyed by the powder device is sprayed to the surface of the substrate, laser cladded by the first laser beam and the second laser beam. The gas can quickly escape to ensure the density of the cladding layer and reduce the porosity.

A laser tube-cutting machine is disclosed. The tube-cutting machine may include a processing station where raw material enter the machine, a holding and positioning station configured to hold and position the raw material, at least one combined measurement and laser cutting station including a laser and at least one sensor configured to measure various aspects of the tube both before and after cutting, and an outflow processing station where cut material exit the machine.

The invention relates to a method for producing an axle housing of a vehicle axle, by means of integrally connecting an axle tube (1) to an axle shaft (2) which is positioned on the longitudinal axis (L) of the axle tube, is equipped with bearing surfaces (3) for mounting a vehicle wheel, and has a tube cross-section facing said axle tube (1) which is substantially the same as the tube cross-section of the axle tube. In order to develop a welding method for the production of an axle housing that consists of an axle tube and an axle shaft secured thereto, which method is optimised in terms of the dynamic loads to which the axle housing is typically subjected in a driving operation, the method comprises the following steps: •—arranging the axle tube (1) and the axle shaft (2), with the abutting surfaces of their tube cross-sections positioned coaxially to one another, in a workpiece receiving portion of a welding installation (10), said welding installation additionally comprising an arc welding device (11) and a laser welding device (12) which is operated in parallel, •—continuously miming a weld seam (20) in the peripheral direction of the tube cross-sections, both welding devices (11, 12) being directed, actively and from the outside, onto substantially the same peripheral section of the abutting surfaces, wherein the laser beam (S) meets the outside (14) of the tube at right angles, and intersects the longitudinal axis (L) of the axle tube (1), and •—stopping running the weld seam (20) once this has passed over a peripheral angle of at least 360°. A corresponding axle housing is also disclosed.

A laser processing apparatus for producing a GaN wafer from a GaN ingot includes a laser beam irradiating unit configured to apply a laser beam having a wavelength capable of passing through the GaN ingot held by a chuck table. The laser beam irradiating unit includes a laser oscillator configured to oscillate the laser beam. The laser oscillator includes a seeder configured to oscillate a high-frequency pulsed laser, a thinning-out unit configured to thin out high-frequency pulses oscillated by the seeder at a predetermined repetition frequency, and generate one burst pulse with a plurality of high-frequency pulses as sub-pulses, and an amplifier configured to amplify the generated burst pulse.

A pulley assembly having a body, a shaft mount and a plurality of bolts is disclosed. The body is aligned to the shaft mount by providing a tight tolerance between a shoulder portion of the bolt and a neck portion of a counter sunk hole formed in the body. Additionally, an outer surface of the body may have a pattern of friction lines or patches formed by fusing particulate matter to the outer surface with heat generated by a laser beam.

A method can include co-axially locating a turbine wheel and a shaft where a force applicator applies an axially directed force to the turbine wheel, where the turbine wheel transfers at least a portion of the force to shaft and where a rotatable shaft collet supports the shaft; rotating the rotatable shaft collet; energizing at least one laser beam; and, via the at least one laser beam, forming a weld between the turbine wheel and the shaft.

A laser irradiation apparatus includes a laser source configured to emit a laser beam to an object that is being conveyed to allow the object to be irradiated with the laser beam; a rotation detector configured to detect rotation of the object to obtain information on the rotation of the object; and circuitry configured to control laser irradiation onto the object based on the information on the rotation of the object.

A system can include a controller; a force applicator; a rotatable shaft centering collet; a drive mechanism that rotates the rotatable shaft centering collect; and a laser beam unit.

A movable table system comprising two identical tables on a common rail arrangement having a linear rail region underneath a detection unit and a processing unit, and therefore the tables can be alternatingly moved in a straight line along the common rail arrangement, in the same table-movement direction, fully underneath the detection unit and processing unit, and can be independently controlled by a computer unit. The movable table system provides a new option for processing planar workpieces, in which a particularly high throughput rate and improved precision can be achieved using merely one processing unit.

There is provided a laser processing method for cutting a semiconductor object along a virtual plane facing a surface of the semiconductor object in the semiconductor object. The laser processing method includes a first step of forming a plurality of first modified spots along the virtual plane to obtain first formation density, by causing laser light to enter into the semiconductor object from the surface, and a second step of forming a plurality of second modified spots along the virtual plane so as to obtain second formation density higher than the first formation density, by causing laser light to enter into the semiconductor object from the surface after the first step.