B23K26/122

METHOD FOR RECOVERING VALUABLES

A method for recovering valuables, which can suppress the loss of valuables in recovering the valuables is provided. The method for recovering valuables of the disclosure comprises: a preparation step of preparing a treatment object including a valuables-containing member that contains valuables on or above a surface of a base material; an immersion step of immersing the treatment object in a liquid such that the valuables-containing member of the treatment object is disposed in the liquid; a collection step of irradiating the valuables-containing member of the treatment object immersed in the liquid with laser light through the liquid so as to remove the valuables-containing member from the treatment object, thereby collecting removed matter of the valuables-containing member into the liquid; and a recovery step of recovering the removed matter of the valuables-containing member from the liquid.

COATING METHOD OF APATITE USING LASER

Provided is a method of forming an apatite coating, the method including immersing a substrate in an apatite-forming precursor solution including Ca.sup.2+ ions and PO.sub.4.sup.3− ions, emitting a laser beam onto a surface of the substrate immersed in the precursor solution, and forming an apatite coating in a region exposed to the laser beam, wherein an output power of the laser beam is set within a range enabling the surface of the substrate to be melted.

COATING METHOD OF APATITE USING LASER

Provided is a method of forming an apatite coating, the method including immersing a substrate in an apatite-forming precursor solution including Ca.sup.2+ ions and PO.sub.4.sup.3− ions, emitting a laser beam onto a surface of the substrate immersed in the precursor solution, and forming an apatite coating in a region exposed to the laser beam, wherein an output power of the laser beam is set within a range enabling the surface of the substrate to be melted.

APPARATUS AND METHOD
20220194010 · 2022-06-23 ·

We describe an apparatus for producing a three-dimensional workpiece, the apparatus comprising: a process chamber for receiving a material from which the three-dimensional workpiece is producible using an additive layer manufacturing technique, wherein the process chamber comprises a translucent window; an irradiation device for irradiating, through the translucent window, the material for producing the three-dimensional workpiece; and an enclosure arranged between the translucent window of the process chamber and the irradiation device, wherein at least a part of the enclosure is translucent for an irradiation beam stemming from the irradiation device to travel from the irradiation device through the enclosure to the material for producing the three-dimensional workpiece, wherein the enclosure comprises an inlet and an outlet, and wherein the apparatus is configured to control a flow of a fluid through the enclosure via the inlet and the outlet.

LASER PEENING PROCESSING APPARATUS AND METHOD OF LASER PEENING PROCESSING
20220184741 · 2022-06-16 · ·

According to one implementation, a laser peening processing apparatus includes a laser oscillator, a condensing lens, an optical element, a liquid tank and a beam expander. The laser oscillator oscillates laser light. The condensing lens condenses the laser light on a surface of an object. The optical element changes a travelling direction of the laser light. The liquid tank inputs the laser light into liquid, and emits and ejects the laser light and the liquid from an exit to the surface. The beam expander adjusts a magnifying ratio of a beam diameter of the laser light entering into the condensing lens. By adjusting the magnifying ratio, a beam diameter of the laser light irradiating the surface becomes a diameter required for laser peening processing of the surface. The adjusting the magnifying ratio also prevents the laser light, having an excess beam diameter, from entering into the optical element.

METHOD FOR LASER MARKING A METALLIC SURFACE

A method for marking a location on a surface of a component includes irradiating the location with a first laser beam to create a first mark having a first color. The location defines a normal extending perpendicularly therefrom. The first laser beam is disposed at a first angle relative to the normal. The method also includes irradiating the location with a second laser beam to create a second mark having a second color different than the first color. The second laser beam is disposed at a second angle relative to the normal. The second angle is different than the first angle.

METHOD FOR LASER MARKING A METALLIC SURFACE

A method for marking a location on a surface of a component includes irradiating the location with a first laser beam to create a first mark having a first color. The location defines a normal extending perpendicularly therefrom. The first laser beam is disposed at a first angle relative to the normal. The method also includes irradiating the location with a second laser beam to create a second mark having a second color different than the first color. The second laser beam is disposed at a second angle relative to the normal. The second angle is different than the first angle.

SEMICONDUCTOR LASER, OPERATING METHOD FOR A SEMICONDUCTOR LASER, AND METHOD FOR DETERMINING THE OPTIMUM FILL FACTOR OF A SEMICONDUCTOR LASER
20210367406 · 2021-11-25 ·

In one embodiment, the semiconductor laser (1) comprises a semiconductor layer sequence (2) based on the material system AlInGaN with at least one active zone (22) for generating laser radiation. A heat sink (3) is thermally connected to the semiconductor layer sequence (2) and has a thermal resistance towards the semiconductor layer sequence (2). The semiconductor layer sequence (2) is divided into a plurality of emitter strips (4) and each emitter strip (4) has a width (b) of at most 0.3 mm in the direction perpendicular to a beam direction (R). The emitter strips (4) are arranged with a filling factor (FF) of less than or equal to 0.4. The filling factor (FF) is set such that laser radiation having a maximum optical output power (P) can be generated during operation.

SEMICONDUCTOR LASER, OPERATING METHOD FOR A SEMICONDUCTOR LASER, AND METHOD FOR DETERMINING THE OPTIMUM FILL FACTOR OF A SEMICONDUCTOR LASER
20210367406 · 2021-11-25 ·

In one embodiment, the semiconductor laser (1) comprises a semiconductor layer sequence (2) based on the material system AlInGaN with at least one active zone (22) for generating laser radiation. A heat sink (3) is thermally connected to the semiconductor layer sequence (2) and has a thermal resistance towards the semiconductor layer sequence (2). The semiconductor layer sequence (2) is divided into a plurality of emitter strips (4) and each emitter strip (4) has a width (b) of at most 0.3 mm in the direction perpendicular to a beam direction (R). The emitter strips (4) are arranged with a filling factor (FF) of less than or equal to 0.4. The filling factor (FF) is set such that laser radiation having a maximum optical output power (P) can be generated during operation.

Laser processing apparatus

A liquid supply mechanism disposed at an upper portion of a holding unit includes a liquid chamber having a transparent plate positioned to form a gap between itself and an upper surface of a workpiece held on a holding table, a roller formed of a transparent member that is disposed in a non-contact state at a position proximate to an upper surface of the workpiece held on the holding table inside the liquid chamber and that produces a flow of a liquid on the workpiece; a motor rotating the roller, a liquid supply nozzle supplying the liquid into the gap from one side of the liquid chamber, and a liquid discharge nozzle discharging the liquid from the other side of the liquid chamber. A laser beam is applied to the workpiece through the transparent plate, the roller, and the liquid supplied into the gap.