B23K26/122

Laser processing apparatus

A liquid supply mechanism is disposed on an upper portion of a holding unit of a laser processing apparatus. The liquid supply mechanism includes: a liquid chamber having a transparent plate positioned such that a gap is formed between the transparent plate and the top surface of a workpiece held on a holding table; a linear-motion mechanism configured to linearly move the transparent plate over the liquid chamber; a liquid supply nozzle configured to supply a liquid from one side of the liquid chamber to the gap; and a liquid discharge nozzle configured to discharge the liquid from another side of the liquid chamber. A laser beam irradiating unit includes a laser oscillator configured to irradiate the workpiece through the transparent plate and the liquid supplied to the gap.

METHOD OF PRODUCING A NANOFLUID USING LASER ABLATION, CORRESPONDING NANOFLUID AND LASER ABLATION SYSTEM FOR MANUFACTURING NANOFLUIDS
20230415270 · 2023-12-28 ·

The invention relates to a method of producing a nanofluid which includes laser ablating a target on a surface of which a liquid is flowing. The method includes the step of moving the target and a laser beam relative to each other. The method further includes the step of moving the target relative to the laser beam such that the laser beam scans across the surface of the target in the X or Z direction when the laser beam is oriented in the Y direction and the target faces the laser beam.

METHOD OF PRODUCING A NANOFLUID USING LASER ABLATION, CORRESPONDING NANOFLUID AND LASER ABLATION SYSTEM FOR MANUFACTURING NANOFLUIDS
20230415270 · 2023-12-28 ·

The invention relates to a method of producing a nanofluid which includes laser ablating a target on a surface of which a liquid is flowing. The method includes the step of moving the target and a laser beam relative to each other. The method further includes the step of moving the target relative to the laser beam such that the laser beam scans across the surface of the target in the X or Z direction when the laser beam is oriented in the Y direction and the target faces the laser beam.

LASER PROCESSING APPARATUS
20200398370 · 2020-12-24 ·

A laser beam irradiation unit of a laser processing apparatus includes a first laser oscillator that emits a first laser beam with a short pulse width, a second laser oscillator that emits a second laser beam with a long pulse width, a polarizing beam splitter that combines the first laser beam and the second laser beam, and a liquid layer forming instrument that forms a layer of a liquid on the upper surface of a workpiece. The same place on the workpiece is irradiated with the first laser beam and the second laser beam while a chuck table and the laser beam irradiation unit are relatively moved, and plasma generated when irradiation with the first laser beam is performed through the layer of the liquid is grown by energy of the second laser beam to perform processing for the workpiece.

LASER PROCESSING APPARATUS
20200398370 · 2020-12-24 ·

A laser beam irradiation unit of a laser processing apparatus includes a first laser oscillator that emits a first laser beam with a short pulse width, a second laser oscillator that emits a second laser beam with a long pulse width, a polarizing beam splitter that combines the first laser beam and the second laser beam, and a liquid layer forming instrument that forms a layer of a liquid on the upper surface of a workpiece. The same place on the workpiece is irradiated with the first laser beam and the second laser beam while a chuck table and the laser beam irradiation unit are relatively moved, and plasma generated when irradiation with the first laser beam is performed through the layer of the liquid is grown by energy of the second laser beam to perform processing for the workpiece.

Method and device for increasing laser-induced shock wave pressure

A method and a device for increasing a laser induced shock wave pressure. According to the method, plasmas (21) are generated by impinging an aluminium foil (20) using lasers; a high-voltage pulse electrode (22) discharges to the plasmas (21) to induce and form a photoelectric combined energy field and then high-temperature plasmas (21) having the characteristics of an ultra-high density and an ultra-high speed expansion are induced and generated; a surface to be processed is impacted by the high-temperature plasmas (21) in a restrained state; the laser induced shock wave pressure is increased substantially; the surface of a high-strength material is reinforced, and the strength, hardness, abrasion resistance and anti-fatigue performances of the high-strength material are improved. The device comprises a laser, the electrode (22), a high-voltage power supply (4), a discharging medium (12), a moving platform, etc.

THREE-DIMENSIONAL SILICON SCAFFOLD FOR TISSUE ENGINEERING
20200190452 · 2020-06-18 ·

Three-dimensional scaffolds to facilitate engineered tissue growth are described herein. An exemplary scaffold comprises a first capillary element, a second capillary element, and a connective element that spans a distance between the first capillary element and the second capillary element, connecting the capillary elements. Tissues can be grown within the scaffold such that the tissues have highly vascularized structures with many capillaries running throughout. The scaffolds can be fabricated by selective electrochemical etching of a semiconductor element. The electrochemical etching can be controlled by way of a laser configured to stimulate multiphoton absorption in the semiconductor.

THREE-DIMENSIONAL SILICON SCAFFOLD FOR TISSUE ENGINEERING
20200190452 · 2020-06-18 ·

Three-dimensional scaffolds to facilitate engineered tissue growth are described herein. An exemplary scaffold comprises a first capillary element, a second capillary element, and a connective element that spans a distance between the first capillary element and the second capillary element, connecting the capillary elements. Tissues can be grown within the scaffold such that the tissues have highly vascularized structures with many capillaries running throughout. The scaffolds can be fabricated by selective electrochemical etching of a semiconductor element. The electrochemical etching can be controlled by way of a laser configured to stimulate multiphoton absorption in the semiconductor.

LASER PROCESSING METHODS AND LASER PROCESSING SYSTEMS
20200180073 · 2020-06-11 ·

In a laser processing method for processing an interior of a material by projecting a laser beam, in which the material is placed in a container filled with a liquid with a refractive index equivalent to a refractive index of the material, at least a portion of the container defines and functions as an incident surface with a certain curvature, and the laser beam is projected to a corrected position through the incident surface, the corrected position having been obtained based on the refractive index of the material and a processing position in the material.

PROCESSING METHOD AND PROCESSING SYSTEM
20200101564 · 2020-04-02 · ·

The processing system is provided with: a liquid supply device which can supply a liquid; a liquid processing device which processes a liquid supplied from the liquid supply device such that a non-liquid-immersion state is generated locally in a partial area including a target portion on a predetermined surface; a beam irradiation section which emits beams toward the target portion; and a moving apparatus which moves the predetermined surface. The beams are irradiated on the target portion to apply a predetermined processing to the target portion, in a state in which the target portion is in the non-liquid-immersion state.