The present invention discloses a composite device for high-precision laser additive/subtractive manufacturing, which consists of a sealed shaping chamber, an inert protective gas source and a machine-shaping platform; wherein, the inert protective gas source is connected to the sealed shaping chamber; and the machine-shaping platform is arranged in the sealed shaping chamber, as well as there is a light path selection system is arranged right above the machine-shaping platform; in addition, there is a machining position is equipped on the machine-shaping platform, meanwhile, there are lead screws are arranged under the machine-shaping platform.

A method for cutting a workpiece includes cutting the workpiece along a predefined cutting contour to separate a workpiece part from a scrap part, and checking whether the workpiece part has been fully separated from the scrap part during the cutting. The workpiece is re-cut along an additional cutting contour laterally offset from the predefined cutting contour if it is found during the checking that the workpiece part has not been fully separated from the scrap part. The disclosure also relates to an associated machine for cutting a workpiece.

Embodiments of the present disclosure generally relate to apparatus and methods for semiconductor processing, more particularly, to a thermal process chamber. The thermal process chamber includes a substrate support, a first plurality of heating elements disposed over or below the substrate support, and a spot heating module disposed over the substrate support. The spot heating module is utilized to provide local heating of cold regions on a substrate disposed on the substrate support during processing. Localized heating of the substrate improves temperature profile, which in turn improves deposition uniformity.

The present invention generally describes apparatuses and methods used to perform an annealing process on desired regions of a substrate. In one embodiment, pulses of electromagnetic energy are delivered to a substrate using a flash lamp or laser apparatus. The pulses may be from about 1 nsec to about 10 msec long, and each pulse has less energy than that required to melt the substrate material. The interval between pulses is generally long enough to allow the energy imparted by each pulse to dissipate completely. Thus, each pulse completes a micro-anneal cycle. The pulses may be delivered to the entire substrate at once, or to portions of the substrate at a time. Further embodiments provide an apparatus for powering a radiation assembly, and apparatuses for detecting the effect of pulses on a substrate.

A dry cleaning apparatus includes a chamber, a substrate support supporting a substrate within the chamber, a shower head arranged in an upper portion of the chamber to supply a dry cleaning gas toward the substrate, the shower head including an optical window transmitting a laser light therethrough toward the substrate support, a plasma generator generating plasma from the dry cleaning gas, and a laser irradiator irradiating the laser light on the substrate through the optical window and the plasma to heat the substrate.

The present invention generally describes apparatuses and methods used to perform an annealing process on desired regions of a substrate. In one embodiment, pulses of electromagnetic energy are delivered to a substrate using a flash lamp or laser apparatus. The pulses may be from about 1 nsec to about 10 msec long, and each pulse has less energy than that required to melt the substrate material. The interval between pulses is generally long enough to allow the energy imparted by each pulse to dissipate completely. Thus, each pulse completes a micro-anneal cycle. The pulses may be delivered to the entire substrate at once, or to portions of the substrate at a time. Further embodiments provide an apparatus for powering a radiation assembly, and apparatuses for detecting the effect of pulses on a substrate.

Embodiments of the present disclosure generally relate to apparatus and methods for semiconductor processing, more particularly, to a thermal process chamber. The thermal process chamber includes a substrate support, a first plurality of heating elements disposed over or below the substrate support, and a spot heating module disposed over the substrate support. The spot heating module is utilized to provide local heating of cold regions on a substrate disposed on the substrate support during processing. Localized heating of the substrate improves temperature profile, which in turn improves deposition uniformity.

A processing method of a workpiece used when the workpiece is processed is provided. The processing method of a workpiece includes a disposing step of disposing the workpiece in a gas containing a substance that generates an active species that reacts with the workpiece, a measurement step of measuring the distribution of the thickness of the workpiece disposed in the gas, and a laser beam irradiation step of irradiating the workpiece in the gas with a laser beam of which the power is adjusted based on the distribution of the thickness measured in the measurement step. In the laser beam irradiation step, the removal amount by which a region irradiated with the laser beam in the workpiece is removed by the active species is controlled by irradiating the workpiece with the laser beam of which the power is adjusted.

A method for cutting a workpiece includes cutting the workpiece along a predefined cutting contour to separate a workpiece part from a scrap part, and checking whether the workpiece part has been fully separated from the scrap part during the cutting. The workpiece is re-cut along an additional cutting contour laterally offset from the predefined cutting contour if it is found during the checking that the workpiece part has not been fully separated from the scrap part. The disclosure also relates to an associated machine for cutting a workpiece.

A laser processing apparatus according to the present disclosure includes a placement base on which a processing receiving object is placed, an optical system that guides laser light to the processing receiving object, a gas supply port via which a gas is supplied to a laser light irradiated region of the processing receiving object, a gas recovery port via which the supplied gas is recovered, a mover that moves the irradiated region, and a controller that controls, in accordance with the moving direction of the irradiated region, the direction of the flow of the gas flowing from the gas supply port to the gas recovery port, and the controller changes the direction of the gas flow in response to a change in the moving direction of the irradiated region in such a way that the gas flows in the direction opposite the moving direction of the irradiated region.