A laser processing system includes: a wavelength-variable laser device configured to output each of a laser beam at an absorption line as a wavelength at which light is absorbed by oxygen and a laser beam at a non-absorption line as a wavelength at which the amount of light absorption by oxygen is smaller than at the absorption line; an optical system configured to irradiate a workpiece with the laser beam; and a laser control unit configured to control the wavelength-variable laser device, set the wavelength of the laser beam output from the wavelength-variable laser device to be the non-absorption line when laser processing is performed on the surface of the workpiece in gas containing oxygen, and set the wavelength of the laser beam output from the wavelength-variable laser device to be the absorption line when ozone cleaning is performed on the surface of the workpiece in gas containing oxygen.

A method including emitting a laser beam toward a transparent workpiece such that portions of the laser beam pass through openings of a beam shaping structure and form corresponding laser beam focal lines across the transparent workpiece. The laser beam focal lines forming a plurality of defects in the transparent workpiece disposed along a contour line. The method further including separating the transparent workpiece along the contour line to provide a first workpiece section and a second workpiece section and a cut edge surface on each of the first and second workpiece sections, each cut edge including a defect region and an unaffected region. The defect region having a higher surface roughness than the unaffected region and a minimum distance of the unaffected region to the first major surface being about 20% or less of a thickness between the first major surface and the second major surface.

A substrate manufacturing method of manufacturing a substrate from a workpiece is disclosed. A laser beam is first split and condensed to form a plurality of focal points aligned side by side along a first direction, and with the focal points positioned inside the workpiece, the focal points and the workpiece are moved relative to each other along a second direction orthogonal to the first direction such that a separation layer is formed. A region of the focal points and the workpiece are then moved relative to each other along the first direction. These relative movements are alternately and repeatedly performed. The splitting and condensation of the laser beam are performed such that a volume expansion of the workpiece associated with the formation of the modified regions is relatively small in the vicinity of at least one focal point formed on a center side.

A laser device may include a first lens array including first lenses arranged in a first direction, a condenser lens disposed in a second direction intersecting the first direction of the first lens array and a first refractive index adjusting member disposed in a third direction opposite to the second direction of the first lens array.

A method of producing a wafer from a hexagonal single-crystal ingot includes the steps of planarizing an end face of the hexagonal single-crystal ingot, forming a peel-off layer in the hexagonal single-crystal ingot by applying a pulsed laser beam whose wavelength is transmittable through the hexagonal single-crystal ingot while positioning a focal point of the pulsed laser beam in the hexagonal single-crystal ingot at a depth corresponding to a thickness of a wafer to be produced from the planarized end face of the hexagonal single-crystal ingot, recording a fabrication history on the planarized end face of the hexagonal single-crystal ingot by applying a pulsed laser beam to the hexagonal single-crystal ingot while positioning a focal point of the last-mentioned pulsed laser beam in a device-free area of the wafer to be produced.

Provided is a laser mark printing method and a method of producing a laser-marked silicon wafer that can reduce the machining strain left around dots constituting a laser mark. In a method of printing a laser mark having a plurality of dots on a silicon wafer, the plurality of dots are formed using laser light having a wavelength in the ultraviolet region.

A process system is a process system performing a processing process on an object by irradiating at least a part of the object with processing light from a processing light source, and includes a combining optical system combining optical path of measurement light from a measurement light source and optical path of the processing light from the processing light source; an irradiation optical system irradiating the object with the processing light and the measurement light from the combining optical system; a position change apparatus changing a relative positional relationship between the object and a light concentration position of the processing light from the irradiation optical system; an light reception apparatus receiving, through the irradiation optical system, light generated by the measurement light with which a surface of the object is irradiated; and a control apparatus controlling the position change apparatus by using output from the light reception apparatus.

A laser processing apparatus includes a support part, a light source, a spatial light modulator, a converging part, and a controller. The controller controls the spatial light modulator so that laser light is branched into a plurality of rays of processing light including 0th-order light and a plurality of converging points for the plurality of rays of processing light are located at positions different from each other in a Z direction and an X direction, and controls at least one of the support part and the converging part. The controller controls the spatial light modulator so that a converging point of the 0th-order light in the Z direction is located on an opposite side of a converging point of non-modulated light of the laser light with respect to an ideal converging point of the 0th-order light.

A laser processing apparatus includes a support part, a light source, a spatial light modulator, a converging part, and a controller. The controller controls the spatial light modulator so that laser light is branched into a plurality of rays of processing light including 0th-order light and a plurality of converging points for the plurality of rays of processing light are located at positions different from each other in a Z direction and an X direction, and controls at least one of the support part and the converging part so that the X direction coincides with an extension direction of a line and the plurality of converging points move relatively along the line. The controller controls the spatial light modulator so that a converging point of the 0th-order light is located one side with respect to a converging point of non-modulated light of the laser light, in the X direction.

A laser processing device and a laser processing method that are capable of forming a high-quality semiconductor film are provided. An ELA device (excimer laser annealing device) (1) includes a laser oscillator (10) that generates laser light for forming a polysilicon film by irradiating an amorphous silicon film over a substrate to be processed with the laser light, a pulse measuring instrument (100) for detecting first partial light and second partial light contained in the laser light, and a monitoring device (60) for comparing a detection result of the first partial light with a detection result of the second partial light.