Embedded die packaging for semiconductor devices and methods of fabrication wherein conductive vias are provided to interconnect contact areas on the die and package interconnect areas. Before embedding, a protective masking layer is provided selectively on regions of the electrical contact areas where vias are to be formed by laser drilling. The material of the protective masking layer is selected to protect against over-drilling and/or to control absorption properties of surface of the pad metal to reduce absorption of laser energy during laser drilling of micro-vias, thereby mitigating physical damage, overheating or other potential damage to the semiconductor device. The masking layer may be resistant to surface treatment of other regions of the electrical contact areas, e.g. to increase surface roughness to promote adhesion of package dielectric.

A laser processing device includes: a light source configured to output laser light; a space light modulator for modulating the laser light output from the light source in accordance with a modulation pattern and outputting the modulated laser light; a converging lens for converging the laser light output from the space light modulator to an object, and forming a converging spot on the object; a movement unit for relatively moving the converging spot with respect to the object; and a control unit for relatively moving, while setting a position of the converging spot in a Z direction intersecting with an incident surface of the laser light on the object at a first Z position, the converging spot along a line extended in an X direction along the incident surface by controlling at least the space light modulator and the movement unit.

Provided are a laser annealing apparatus and a method of manufacturing a substrate having a poly-Si layer using the laser annealing apparatus. The laser annealing apparatus includes a laser beam source that emits a linearly polarized laser beam, a polygon mirror that rotates around a rotation axis and reflects the laser beam emitted from the laser beam source, a first Kerr cell disposed on a laser beam path between the laser beam source and the polygon mirror, and a first optical element that directs the laser beam reflected by the polygon mirror toward an amorphous Si layer where the laser beam is irradiated upon the amorphous Si layer.

A thermal processing system is provided. The thermal processing system can include a processing chamber and a workpiece disposed within the processing chamber. The thermal processing system can include a heat source configured to emit light towards the workpiece. The thermal processing system can further include a tunable reflective array disposed between the workpiece and the heat source. The tunable reflective array can include a plurality of pixels. Each pixel of the plurality of pixels can include an electrochromatic material configurable in a translucent state or an opaque state. When the electrochromatic material of a pixel is configured in the translucent state, the light at least partially passes through the pixel. Conversely, transmission of light through a pixel is reduced when the electrochromatic material of the pixel is configured in the opaque state.

A method for thinning a wafer is provided which is related to the field of semiconductor technologies, to resolve problems of a low yield, a complex process, and high preparation costs of a SiC power device. The wafer which may alternatively be understood as a composite substrate, includes a first silicon carbide layer, a dielectric layer, and a second silicon carbide layer that are disposed in a stacked manner. The wafer has a first side and a second side that are opposite to each other, and a side that is of the second silicon carbide layer and that is away from the first silicon carbide layer is the first side of the wafer.

The problem to be solved by the present invention is to provide a novel technique that can remove a strained layer introduced into an aluminum nitride substrate. In order to solve this problem, the present aluminum nitride substrate manufacturing method involves a strained layer removal step for removing a strained layer in an aluminum nitride substrate by heat treatment of the aluminum nitride substrate in a nitrogen atmosphere. In this way, the present invention can remove a strained layer that has been introduced into an aluminum nitride substrate.

A manufacturing process of an element chip comprises a preparing step for preparing a substrate having first and second sides opposed to each other, the substrate containing a semiconductor layer, a wiring layer and a resin layer formed on the first side, and the substrate including a plurality of dicing regions and element regions defined by the dicing regions. Also, the manufacturing process comprises a laser grooving step for irradiating a laser beam onto the dicing regions to form grooves so as to expose the semiconductor layer along the dicing regions. Further, the manufacturing process comprises a dicing step for plasma-etching the semiconductor layer along the dicing regions through the second side to divide the substrate into a plurality of the element chips. The laser grooving step includes a melting step for melting a surface of the semiconductor layer exposed along the dicing regions.

A laser beam applying unit of a laser processing apparatus for processing a wafer includes a laser oscillator for emitting a pulsed laser beam having a wavelength transmittable through the wafer, a beam condenser for converging the pulsed laser beam emitted from the laser oscillator onto the wafer held on a chuck table, a beam splitter assembly disposed between the laser oscillator and the beam condenser, for splitting the pulsed laser beam emitted from the laser oscillator to form at least two converged spots on the wafer that are spaced from each other in X-axis directions, and a mask assembly disposed between the laser oscillator and the beam condenser, for reducing the width of the converged spots on the wafer in Y-axis directions to keep the converged spots on the wafer within the width of the projected dicing lines on the wafer.

A solder material may include nickel and tin. The nickel may include first and second amounts of particles. A sum of the particle amounts is a total amount of nickel or less. The first amount is between 5 at % and 60 at % of the total amount of nickel. The second amount is between 10 at % and 95 at % of the total amount of nickel. The particles of the first amount have a first size distribution, the particles of the second amount have a second size distribution, 30% to 70% of the first amount have a particle size in a range of about 5 μm around a particle size the highest number of particles have according to the first size distribution, and 30% to 70% of the second amount have a particle size in a range of about 5 μm around a particle size the highest number of particles have according to the second size distribution.

A display apparatus includes a light source, a display panel, a light guide member, and an optical member. The light source is configured to generate light. The display panel is configured to display an image. The light guide member includes at least one surface adjacent to the light source. The optical member is between the light guide member and the display panel. The optical member includes a low refractive layer, a first cover layer, and a light conversion layer. The low refractive layer is on a light output surface of the light guide member and includes side surfaces. The first cover layer is on the low refractive layer and surrounds at least a portion of the side surfaces of the low refractive layer. The light conversion layer is on the first cover layer and is configured to covert a wavelength band of incident light.