A method for separating a temporarily bonded substrate stack by bombardment of a joining layer of the substrate stack by means of laser beams emitted by a laser, characterised in that laser beams of the laser reflected and/or transmitted at the temporarily bonded substrate stack are detected during the bombardment of the joining layer with the laser beams. The invention also relates to a corresponding device.

Process for producing semiconductor devices in a substrate, comprising: photolithography of a pattern of a reticle onto a portion of the substrate, defining first elements of the semiconductor devices, an exposure of the pattern being repeated a plurality of times in order to define all of the devices, photolithography of a pattern of an etch mask over all of the substrate, etching photolithography patterns into one portion of the thickness of the substrate, wherein first dicing lanes encircling the devices are included in the pattern of the etch mask and/or of the reticle, and the photolithography of the etch mask defines second dicing lanes defined by predetermined fracture lines of the edges of the substrate, and furthermore comprising the implementation of a step of irradiating the substrate with a laser beam through the first and second dicing lanes.

Provided are a laser control structure and a laser bonding method using the same, and more particularly, a laser bonding method including: forming bonding portions on a substrate; providing a bonding object onto the bonding portions; providing a laser control structure onto the bonding object or the substrate; irradiating a laser toward the bonding object and the bonding portions; controlling quantity of laser light absorbed through the laser control structure; using the controlled quantity of laser light to heat the bonding portions and the bonding object to a bonding temperature; and bonding the bonding portions and the bonding object, wherein the laser control structure includes: a first substrate including a first region and a second region; a first thin film laminate on the first region; and a second thin film laminate on the second region, wherein: the first thin film laminate includes at least one first thin film layer and at least one second thin film layer, which are laminated on the first region; the second thin film laminate includes at least one third thin film layer and at least one fourth thin film layer, which are laminated on the second region; reflectance or absorptivity of the first thin film laminate with respect to laser is different from reflectance or absorptivity of the second thin film laminate; and the bonding temperature varies according to the quantity of laser light.

An element chip manufacturing method includes a step of preparing a substrate including a semiconductor layer and a wiring layer formed on the semiconductor layer and having a plurality of element regions and a dicing region defining the element regions, a laser grooving step of irradiating a laser beam to the wiring layer at the dicing region, to form an aperture exposing the semiconductor layer, and an individualization step of etching the semiconductor layer exposed from the aperture, with plasma, to divide the substrate into a plurality of element chips. The laser grooving step including a step of irradiating a first laser beam, to form a first groove exposing the semiconductor layer in the dicing region, and a step of irradiating a second laser beam, with a beam center positioned outside a side wall of the first groove, to widen the first groove into the aperture.

An element chip manufacturing method includes a step of preparing a substrate including a semiconductor layer and a wiring layer formed on the semiconductor layer, the substrate having element regions and a dicing region defining the element regions, a laser grooving step of irradiating a laser beam to the wiring layer at the dicing region, to form an aperture exposing the semiconductor layer, and a step of etching the semiconductor layer exposed from the aperture, with plasma, to divide the substrate into a plurality of element chips. The laser grooving step includes a step of irradiating a first laser beam having a first pulse width, to remove the wiring layer in an edge portion of the dicing region, and a step of irradiating a second laser beam having a second pulse width which is longer than the first pulse width, to remove the wiring layer inside from the edge portion.

A processing method includes a holding step of holding a workpiece by a chuck table including a holding surface that holds the workpiece in an upper surface and a sheet covering step of covering the upper surface of the chuck table in addition to the workpiece by a sheet having transmissibility. The processing method also includes a close contact step of generating a suction force for the holding surface of the chuck table and reducing the pressure on a region covered by the sheet to bring the workpiece into close contact with the upper surface of the chuck table by an atmospheric pressure applied to the sheet and a modified layer forming step of positioning the focal point of a laser beam inside the workpiece through the sheet and irradiating the workpiece with the laser beam to form a modified layer.

A laser crystallizing apparatus includes a first light source unit configured to emit a first input light having a linearly polarized laser beam shape. A second light source unit is configured to emit a second input light having a linearly polarized laser beam shape. A polarization optical system is configured to rotate the first input light and/or the second input light at a predetermined rotation angle. An optical system is configured to convert the first input light and the second input light, which pass through the polarization optical system, into an output light. A target substrate is seated on a stage and output light is directed onto the target substrate. A monitoring unit is configured to receive the first input light or the second input light from the polarization optical system and measure a laser beam quality thereof.

Provided are a Sn—Bi—In-based low melting-point joining member used in a Pb-free electroconductive joining method in mounting a semiconductor component, and is usable for low-temperature joining, and a manufacturing method therefor.

A Sn—Bi—In-based low melting-point joining member, including a Sn—Bi—In alloy that has a composition within a range represented by a quadrangle in a Sn—Bi—In ternary phase diagram, a first quadrangle having four vertices including: Point 1 (1, 69, 30), Point 2 (26, 52, 22), Point 3 (40, 10, 50), and Point 4 (1, 25, 74), where Point (x, y, z) is defined as a point of x mass % Sn, y mass % Bi and z mass % In, and that also has a melting point of 60 to 110° C. As well as a method for producing a Sn—Bi—In-based low melting-point joining member, including a plating step of forming a plated laminate on an object to be plated, the plated laminate including a laminated plating layer obtained by performing Sn plating, Bi plating, and In plating respectively such that the laminated plating layer has a composition within the range represented by the first quadrangle.

An ingot is processed by applying exciting light, and detecting fluorescence occurring from an upper surface of the ingot. A distribution of the number of photons of the fluorescence on the upper surface of the ingot is stored as two-dimensional data in association with XY coordinate positions, and a Z-coordinate position at which the two-dimensional data is obtained is also stored. A laser beam forms a peeling layer by irradiating the ingot while positioning the condensing point of the laser beam at a depth corresponding to the thickness of a wafer from the upper surface of the ingot. A wafer is separated from the ingot with the peeling layer as a starting point, and three-dimensional data is generated representing the distribution of the number of photons of the fluorescence in the whole of the ingot on the basis of two-dimensional data at each Z-coordinate position of the ingot.

A method for producing a detachment area in a solid body in described. The solid body has a crystal lattice and is at least partially transparent to laser beams emitted by a laser. The method includes: modifying the crystal lattice of the solid by a laser beam, wherein the laser beam penetrates through a main surface of a detachable solid portion of the solid body, wherein a plurality of modifications are produced in the crystal lattice, wherein the modification are formed in a plane parallel to the main surface and at a distance from one another, wherein as a result of the modifications, the crystal lattice cracks the regions surrounding the modifications sub-critically in at least the one portion, and wherein the subcritical cracks are arranged in a plane parallel to the main surface.