Disclosed herein are power electronic modules formed by directly bonding a heat sink to a dielectric substrate using transition liquid phase bonding.

A protective film substance for laser processing includes a solution including a water-soluble resin, an organic solvent, and a light absorbent. The solution has an absorbance, i.e., an absorbance converted for a solution diluted 200 times, equal to 0.05 or more per an optical path length of 1 cm at a wavelength of 532 nm. Alternatively, the protective film substance for laser processing includes a solution including a water-soluble resin, an organic solvent, and a polyhydroxyanthraquinone derivative.

A laser beam application unit of a laser processing machine includes a laser oscillator that emits a laser beam, an fθ main lens that focuses and applies the laser beam which has been emitted from the laser oscillator, to a workpiece held on a holding table, a scan unit that is arranged on an optical path between the laser oscillator and the fθ main lens, scans the laser beam, and guides the resulting scanned laser beam to the fθ main lens, and an fθ sub-lens that is arranged on the optical path between the laser oscillator and the scan unit and converts the laser beam from parallel light into diffused light.

A laser beam applying unit in a laser processing apparatus includes a laser oscillator for emitting a laser beam, a beam condenser for focusing the laser beam emitted from the laser oscillator and applying the focused laser beam to a workpiece held on a holding table, and a scanning unit that is disposed on an optical path of the laser beam between the laser oscillator and the beam condenser and that has scanning mirrors for scanning the laser beam and guiding the scanned laser beam toward the beam condenser. The scanning mirrors are housed in a chamber having a first window for allowing the laser beam emitted from the laser oscillator to pass therethrough to the scanning mirrors and a second window for allowing the laser beam scanned by the scanning mirrors to pass therethrough to the beam condenser.

An ultrasonic wave is applied to an upper surface of an ingot via a liquid layer, in a state in which an outer circumferential region of a lower surface of the ingot is sucked. A lower side around an outer circumferential arc-shaped portion of the lower surface of the ingot is open so that liquid that serves as a medium of the ultrasonic wave does not collect around the outer circumferential arc-shaped portion of the lower surface of the ingot. As a result, a peel-off layer formed in the ingot is not immersed in liquid when an ultrasonic wave is applied to the upper surface of the ingot via the liquid layer. Consequently, even when the ingot becomes thin, the ingot can be separated at the peel-off layer, and a wafer can be peeled off from the ingot.

A laser beam irradiation unit of a laser processing apparatus includes a first splitting unit that causes a laser beam emitted from a laser oscillator to branch into a first optical path and a second optical path, a first beam condenser that focuses the laser beam having been introduced to the first optical path, and a second beam condenser that focuses the laser beam having been introduced to the second optical path. The laser beam irradiation unit further includes a second splitting unit on the first optical path between the first splitting unit and the first beam condenser that splits the laser beam into at least two laser beams, and a laser beam scanning unit on the second optical path between the first splitting unit and the second beam condenser that executes scanning with the laser beam and introduces the laser beam to the second beam condenser.

A heat assisted flip chip bonding apparatus includes a semiconductor assembly having a substrate and a chip, a heating source and a press and cover assembly having a cover element and press elements. The chip is disposed above the substrate and includes conductors which contact with conductive pads on the substrate. The heating source is provided to emit a heated light which illuminates the chip via an opening of the cover element. The press elements are located between the cover element and the semiconductor assembly and each includes an elastic unit and a pressing unit. Both ends of the elastic unit are connected to the cover element and the pressing unit respectively, and the pressing unit is provided to press a back surface of the chip.

The present invention relates to a chamfered silicon carbide substrate which is essentially monocrystalline, and to a corresponding method of chamfering a silicon carbide substrate. A silicon carbide substrate according to the invention comprises a main surface (102), wherein an orientation of said main surface (102) is such that a normal vector ({right arrow over (O)}) of the main surface (102) includes a tilt angle with a normal vector ({right arrow over (N)}) of a basal lattice plane (106) of the substrate, and a chamfered peripheral region (110), wherein a surface of the chamfered peripheral region includes a bevel angle with said main surface, wherein said bevel angle is chosen so that, in more than 75% of the peripheral region, normal vectors ({right arrow over (F)}_i) of the chamfered peripheral region (110) differ from the normal vector of the basal lattice plane by less than a difference between the normal vector of the main surface and the normal vector of the basal lattice plane of the substrate.

A silicon wafer forming method includes: a block ingot forming step of cutting a silicon ingot to form block ingots; a planarizing step of grinding an end face of the block ingot to planarize the end face; a separation layer forming step of applying a laser beam of such a wavelength as to be transmitted through silicon to the block ingot, with a focal point of the laser beam positioned in the inside of the block ingot at a depth from the end face of the block ingot corresponding to the thickness of the wafer to be formed, to form a separation layer; and a wafer forming step of separating the silicon wafer to be formed from the separation layer.

A sintering composition, consisting essentially of: a solvent; and a metal complex dissolved in the solvent, wherein: the sintering composition contains at least 60 wt. % of the metal complex, based on the total weight of the sintering composition; and the sintering composition contains at least 20 wt. % of the metal of the metal complex, based on the total weight of the sintering composition.