This laser processing apparatus is for forming modified regions in an object, which includes a sapphire substrate having a C-plane as a main surface, along cutting lines by focusing laser light on the object, and is provided with a laser light source, a spatial light modulator, and a focusing optical system. The spatial light modulator performs aberration correction by a first aberration correction amount smaller than an ideal aberration correction amount when the modified region is formed along a first cutting line along an a-axis direction of the sapphire substrate, and performs aberration correction by a second aberration correction amount smaller than the ideal aberration correction amount and different from the first aberration correction amount when the modified region is formed along a second cutting line along an in-axis direction of the sapphire substrate.

An exposure system that performs scanning exposure of a semiconductor substrate by irradiating a reticle with a pulse laser beam includes a laser apparatus configured to emit a pulse laser beam, an illumination optical system through which the pulse laser beam is guided to the reticle, a reticle stage, and a processor configured to control emission of the pulse laser beam from the laser apparatus and movement of the reticle by the reticle stage. The reticle includes a region in which multiple kinds of patterns are arranged in a mixed manner in a scanning width direction orthogonal to a scanning direction of the scanning exposure. The processor instructs the laser apparatus about a target wavelength such that the laser apparatus emits the pulse laser beam of a wavelength with which dispersion of best focus positions corresponding to respective patterns of the multiple kinds of patterns is minimum.

Energy is locally supplied to a cutting surface that is formed in an outer circumferential region of a wafer in a trimming step, before a grinding step of grinding the wafer. This can remove or repair at least part of a damage layer formed in the outer circumferential region of the wafer due to the trimming step. As a result, breakage of the wafer that originates from the outer circumferential region in the grinding of the wafer which has been subjected to the edge trimming and generation of dust in a step after this grinding can be suppressed.

A wire bonding method includes bonding a tip of a wire provided through a clamp and a capillary onto a bonding pad of a chip, moving the capillary to a connection pad of a substrate corresponding to the bonding pad, bonding the wire to the connection pad to form a bonding wire connecting the bonding pad to the connection pad, before the capillary is raised from the connection pad, applying a electrical signal to the wire to detect whether the wire and the connection pad are in contact with each other, changing a state of the clamp to a closed state when the wire is not in contact with the connection pad and maintaining the state of the clamp in an open state when the wire is in contact with the connection pad, and raising the capillary from the connection pad while maintaining the state of the clamp.

A device configured to receive a first carrier with a first receptacle; to guide a second carrier in a conveying direction with a second receptacle; to receive the first carrier with the first receptacle so that the components carried by it are oriented towards the second receptacle; to separate the components in response to information from a control unit; and convey the second carrier in its position relative to a placement position so that an electronic subassembly on the second carrier reaches the placement position. The second receptacle has a contact surface for the second carrier which is curved in the conveying direction of the second carrier and the second receptacle at least partially includes a second conveying device which occupies only part of the second receptacle transversely to the conveying direction of the second carrier.

A control unit performs first processing of irradiating an object with laser light while relatively moving a first converging point and a second converging point along a first line, in a state where a distance between the first converging point and a second converging point is set as a first distance, and performs second processing of irradiating the object with the laser light while relatively moving the first converging point and the second converging point along a second line, in a state where the distance between the first converging point and the second converging point is set to a second distance smaller than the first distance.

A processing apparatus includes a delivery unit for delivering a workpiece between a cassette placed on a cassette rest and a chuck table and a measuring unit for measuring a thickness of the workpiece. The delivery unit includes a base having a non-contact-type suction holder for ejecting air to develop a negative pressure to attract and hold the workpiece under suction out of contact therewith, and a moving unit for moving the base. The height of the non-contact-type suction holder is adjusted according to the thickness of the workpiece measured by the measuring unit to place the non-contact-type suction holder in a position that is spaced from a face side of the workpiece by a distance in a predetermined range while the workpiece is being delivered by the delivery unit.

A processing device and a processing method for a solid structure are used to perform a processing procedure on the solid structure. The processing device for the solid structure of the invention provides energy to the solid structure by various electromagnetic radiation sources to cause the solid structure to generate qualitative changes or defects, that is, to form a modified layer. Stress and/or hardness of the modified layer are/is different from that of other non-processed areas.

Disclosed is an annealing system integrated with laser and microwave. The annealing system is provided with a microwave system, a laser system, and a measurement and control system. The microwave system provides a microwave energy to a first area of a to-be-annealed object for annealing the first area of the to-be-annealed object. The laser system uses a laser to provide a laser energy to a second area of the to-be-annealed object for annealing the second area of the to-be-annealed object. The measurement and control system monitors and controls a power of a microwave and/or a laser. The annealing system is capable of reducing a time required for an overall annealing, and also capable of avoiding cracks or defects caused by large stress differences.

A solder member mounting method includes providing a substrate having bonding pads formed thereon, detecting a pattern interval of the bonding pads, selecting one of solder member attachers having different pattern intervals from each other, such that the one selected solder member attacher of the solder member attachers has a pattern interval corresponding to the detected pattern interval of the bonding pads, and attaching solder members on the bonding pads of the substrate, respectively, using the one selected solder member attacher.