Patent classifications
B23K2103/52
Self-shielded flux-cored welding wire with special protective slag coating formed in situ and manufacture method thereof
A self-shielded flux-cored welding wire with a special protective slag coating formed in situ and a manufacture method thereof. The self-shielded flux-cored welding wire includes a low-carbon steel belt and a flux core powder, the flux core powder is filled in the low-carbon steel belt, the flux core powder includes the following ingredients in percentage by mass: 60-80% glass powder, 2-8% zirconium oxide powder, 0.05-0.85% graphene powder, 2-8% potassium carbonate sodium powder, 1-3% potassium titanate powder, 2-5% rutile powder, 1-5% corundum powder, 1-3% sodium fluorosilicate powder, and the balance of iron powder, and a weight of the flux core powder accounts for 13-25% of a total weight of the welding wire.
LASER CONTROL STRUCTURE AND LASER BONDING METHOD USING THE SAME
Provided are a laser control structure and a laser bonding method using the same, and more particularly, a laser bonding method including: forming bonding portions on a substrate; providing a bonding object onto the bonding portions; providing a laser control structure onto the bonding object or the substrate; irradiating a laser toward the bonding object and the bonding portions; controlling quantity of laser light absorbed through the laser control structure; using the controlled quantity of laser light to heat the bonding portions and the bonding object to a bonding temperature; and bonding the bonding portions and the bonding object, wherein the laser control structure includes: a first substrate including a first region and a second region; a first thin film laminate on the first region; and a second thin film laminate on the second region, wherein: the first thin film laminate includes at least one first thin film layer and at least one second thin film layer, which are laminated on the first region; the second thin film laminate includes at least one third thin film layer and at least one fourth thin film layer, which are laminated on the second region; reflectance or absorptivity of the first thin film laminate with respect to laser is different from reflectance or absorptivity of the second thin film laminate; and the bonding temperature varies according to the quantity of laser light.
PROCESSING METHOD AND PROCESSING APPARATUS FOR INGOT
An ingot is processed by applying exciting light, and detecting fluorescence occurring from an upper surface of the ingot. A distribution of the number of photons of the fluorescence on the upper surface of the ingot is stored as two-dimensional data in association with XY coordinate positions, and a Z-coordinate position at which the two-dimensional data is obtained is also stored. A laser beam forms a peeling layer by irradiating the ingot while positioning the condensing point of the laser beam at a depth corresponding to the thickness of a wafer from the upper surface of the ingot. A wafer is separated from the ingot with the peeling layer as a starting point, and three-dimensional data is generated representing the distribution of the number of photons of the fluorescence in the whole of the ingot on the basis of two-dimensional data at each Z-coordinate position of the ingot.
Inert gas-assisted laser machining of ceramic-containing articles
An article includes a ceramic material and features a machined surface that is characteristic of cold ablation laser machining, and the machined surface exhibits no visible oxidation. A laser machining apparatus and technique is based on cold-ablation, but is modified or augmented with an inert assist gas to minimize deleterious surface modifications and mitigate oxide formation associated with laser machining.
Low temperature direct bonding of aluminum nitride to AlSiC substrates
Disclosed herein are power electronic modules formed by directly bonding a heat sink to a dielectric substrate using transition liquid phase bonding.
Separation and release of laser-processed brittle material
A method for separating and releasing a closed-form piece from a workpiece made of a brittle material is disclosed. A first pulsed laser-beam creates defects along the outline of the closed-form piece. A second laser-beam selectively heats the closed-form piece for a first time that is sufficient to initiate cracking between the defects. The heating is stopped for a period sufficiently long for the cracks to propagate completely between the defects. The second laser-beam is applied for a second time that causes melting and deformation of the closed-form piece. The deformation opens a gap between the closed-form piece and the rest of the workpiece, thereby allowing release of the closed-form piece.
Method for Forming Silicon Carbide Module Integrated Structure
A method for forming a silicon carbide module integrated structure includes a heat sink and a silicon carbide module, which is fixedly connected with the heat sink. The solder paste is arranged between the heat sink and the silicon carbide module, and the heat sink and the silicon carbide module are hot pressed through a welding process to weld the silicon carbide module and the heat sink together.
Bimetallic Materials Comprising Cermets with Improved Metal Dusting Corrosion and Abrasion/Erosion Resistance
Methods and compositions are provided for improving metal dusting corrosion, abrasion resistance and/or erosion resistance for various materials, preferably for applications relating to high-temperature reactors, including dense fluidized bed reactor components. In particular, cermets comprising (a) at least one ceramic phase selected from the group consisting of metal carbides, metal nitrides, metal borides, metal oxides, metal carbonitrides, and mixtures of thereof and (b) at least one metal alloy binder phase are provided. Ceramic phase materials include chromium carbide (Cr.sub.23C.sub.6). Metal alloy binder phase materials include β-NiAl intermetallic alloys and Ni.sub.3Sn.sub.2 intermetallic alloys, as well as alloys that contain α-Cr and/or γ′-Ni.sub.3Al hard phases. Preferably, bimetallic materials are provided when the cermet compositions are applied using a laser, e.g., a laser cladding method such as high power direct diode (HPDD) laser, or by plasma-based methods such as plasma transfer arc (PTA) welding and powder plasma welding (PPW).
AL2O3-BASED CERAMIC WELDING SEALING COMPONENT AND PREPARATION METHOD THEREOF
The present invention discloses an Al.sub.2O.sub.3-based ceramic welding sealing component and a preparation method thereof, and relates to the technical field of metalized ceramic processing. The Al.sub.2O.sub.3-based ceramic welding sealing component disclosed in the present invention comprises a ceramic matrix and a metallized layer. The ceramic matrix is made from raw materials such as an inorganic fiber-aluminum oxide 3D network matrix, yttrium oxide, silicon oxide, titanium oxide, an additive, a binder and a dispersant, through steps such as preparation of the inorganic fiber-aluminum oxide 3D network matrix, mixing, pelletizing, primary sintering and secondary sintering; and the raw materials of the metallized layer comprise titanium powder, tungsten powder, molybdenum oxide, boron oxide, yttrium oxide and an organic binder. Al.sub.2O.sub.3-based ceramic welding sealing component provided by the present invention has high efficiency of space filling and tensile strength, excellent tensile strength, toughness and high-temperature resistance.
PEELING METHOD AND PEELING APPARATUS
An ultrasonic wave is applied to an upper surface of an ingot via a liquid layer, in a state in which an outer circumferential region of a lower surface of the ingot is sucked. A lower side around an outer circumferential arc-shaped portion of the lower surface of the ingot is open so that liquid that serves as a medium of the ultrasonic wave does not collect around the outer circumferential arc-shaped portion of the lower surface of the ingot. As a result, a peel-off layer formed in the ingot is not immersed in liquid when an ultrasonic wave is applied to the upper surface of the ingot via the liquid layer. Consequently, even when the ingot becomes thin, the ingot can be separated at the peel-off layer, and a wafer can be peeled off from the ingot.