A laser beam irradiation unit of a laser processing apparatus includes a first splitting unit that causes a laser beam emitted from a laser oscillator to branch into a first optical path and a second optical path, a first beam condenser that focuses the laser beam having been introduced to the first optical path, and a second beam condenser that focuses the laser beam having been introduced to the second optical path. The laser beam irradiation unit further includes a second splitting unit on the first optical path between the first splitting unit and the first beam condenser that splits the laser beam into at least two laser beams, and a laser beam scanning unit on the second optical path between the first splitting unit and the second beam condenser that executes scanning with the laser beam and introduces the laser beam to the second beam condenser.

A system and method for performing is laser induced forward transfer (LIFT) of 2D materials is disclosed. The method includes generating a receiver substrate, generating a donor substrate, wherein the donor substrate comprises a back surface and a front surface, applying a coating to the front surface, wherein the coating includes donor material, aligning the front surface of the donor substrate to be parallel to and facing the receiver substrate, wherein the donor material is disposed adjacent to the target layer, and irradiating the coating through the back surface of the donor substrate with one or more laser pulses produced by a laser to transfer a portion of the donor material to the target layer. The donor material may include Bi.sub.2S.sub.3-xS.sub.x, MoS.sub.2, hexagonal boron nitride (h-BN) or graphene. The method may be used to create touch sensors and other electronic components.

The present invention relates to a chamfered silicon carbide substrate which is essentially monocrystalline, and to a corresponding method of chamfering a silicon carbide substrate. A silicon carbide substrate according to the invention comprises a main surface (102), wherein an orientation of said main surface (102) is such that a normal vector ({right arrow over (O)}) of the main surface (102) includes a tilt angle with a normal vector ({right arrow over (N)}) of a basal lattice plane (106) of the substrate, and a chamfered peripheral region (110), wherein a surface of the chamfered peripheral region includes a bevel angle with said main surface, wherein said bevel angle is chosen so that, in more than 75% of the peripheral region, normal vectors ({right arrow over (F)}_i) of the chamfered peripheral region (110) differ from the normal vector of the basal lattice plane by less than a difference between the normal vector of the main surface and the normal vector of the basal lattice plane of the substrate.

This laser processing apparatus is for forming modified regions in an object, which includes a sapphire substrate having a C-plane as a main surface, along cutting lines by focusing laser light on the object, and is provided with a laser light source, a spatial light modulator, and a focusing optical system. The spatial light modulator performs aberration correction by a first aberration correction amount smaller than an ideal aberration correction amount when the modified region is formed along a first cutting line along an a-axis direction of the sapphire substrate, and performs aberration correction by a second aberration correction amount smaller than the ideal aberration correction amount and different from the first aberration correction amount when the modified region is formed along a second cutting line along an in-axis direction of the sapphire substrate.

There are provided high power laser and laser mechanical earth removing equipment, and operations using laser cutting tools having stand off distances. These equipment provide high power laser beams, greater than 1 kW to cut and volumetrically remove targeted materials and to remove laser affected material with gravity assistance, mechanical cutters, fluid jets, scrapers and wheels. There is also provided a method of using this equipment in mining, road resurfacing and other earth removing or working activities.

A method for manufacturing a metal-ceramic substrate (1) includes providing a ceramic layer (10), a metal layer (20) and a solder layer (30) coating the ceramic layer (10) and/or the metal layer (20) and/or the solder layer (30) with an active metal layer (40), arranging the solder layer (30) between the ceramic layer (10) and the metal layer (20) along a stacking direction (S), forming a solder system (35) comprising the solder layer and the active metal layer (40), wherein a solder material of the solder layer (30) is free of a melting point lowering material and bonding the metal layer (20) to the ceramic layer (10) via the solder system (35) by means of an active solder process.

A friction head and a friction additive manufacturing method of adjusting components and synchronously feeding material are provided. The friction head includes a friction body, a charging part and a feeding part. An axis of the friction body, an axis of the charging part and an axis of the feeding part are coincided with one another. The charging part and the feeding part are sleeved on the friction body. Spiral groove(s) extending in a same direction is formed in an inner ring wall of the feeding part. The spiral groove(s) extends through the inner ring wall of the feeding part and is symmetrical about the axis of the feeding part. The spiral groove(s) and a lower outer surface of the feeding part form spiral feeding channel(s). An upper end of each feeding channel is communicated with a corresponding one of feeding hole(s).

A processing apparatus includes a delivery unit for delivering a workpiece between a cassette placed on a cassette rest and a chuck table and a measuring unit for measuring a thickness of the workpiece. The delivery unit includes a base having a non-contact-type suction holder for ejecting air to develop a negative pressure to attract and hold the workpiece under suction out of contact therewith, and a moving unit for moving the base. The height of the non-contact-type suction holder is adjusted according to the thickness of the workpiece measured by the measuring unit to place the non-contact-type suction holder in a position that is spaced from a face side of the workpiece by a distance in a predetermined range while the workpiece is being delivered by the delivery unit.

Method and system for a laser welding process employing the use of a single pulsed fiber laser source configured to generate a radiative output with a wavelength spectrum extending from about 1.8 microns to about 2.6 microns. In a specific case, the laser output from the single pulsed fiber laser source is focused onto the interface of the two pieces of materials at least one of which includes any of glasses, inorganic crystals, and semiconductors.

The present invention relates to an article comprising a ceramic substrate (310) comprising a source of zirconium oxide; a metallic substrate (320); and a braze joint disposed between the ceramic substrate and the metallic substrate. The braze joint comprises (i) a gold rich phase (330) interfacing against a surface of the ceramic substrate. The gold rich phase comprises a refractory metal selected from the group consisting of molybdenum, tungsten, niobium, tantalum and combinations thereof; and (ii) a second metallic phase (340) comprising a metal selected form the group consisting of nickel, iron, vanadium, cobalt, chromium, osmium, tantalum or combinations thereof.