A system for the treatment of a region of an object adjacent to a substrate. The system includes a source of an incident laser beam delivering a focused laser beam. The wavelength of the incident laser beam is greater than the sum of 500 nm and of the wavelength associated with the bandgap of the material forming the substrate and smaller than the sum of 2,500 nm and of this wavelength. The system includes an optical device associating a digital aperture greater than 0.3 and means for correcting the spherical aberrations appearing during the crossing of the substrate for a given thickness of the substrate and a given distance between the substrate and the optical device. The processing being performed on the region through the substrate, and including the physical, chemical, or physico-chemical modification or the ablation of said region.

A first region is formed by injecting a first condition type first dopant into a surface layer portion of an IGBT section of a semiconductor substrate. A second region is formed by injecting a second condition type second dopant into a region of the IGBT section shallower than the first region. An amorphous third region is formed by injecting the first conduction type third dopant into a surface layer portion of a diode section at a concentration higher than that of the second dopant. Thereafter, the IGBT section and the diode section are laser-annealed under conditions in which the third region is partially melted and the first dopant is activated. Subsequently, a surface layer portion which is shallower than the second injection region in the entire region of the IGBT section and the diode section is melted and crystallized by annealing the IGBT section and the diode section.

Aspects include a method of fabricating a semiconductor structure including providing a semiconductor layer, scribing the semiconductor layer to provide one or more scribe lines, disposing a flexible support layer on the semiconductor layer, and applying a force to the scribed semiconductor layer so as to induce cracks along the scribe lines.

A method of manufacturing a pattern structure is provided. The method includes forming a fine pattern on a wafer, cutting the wafer by irradiating the wafer with a laser while changing a focal depth of the laser, thereby forming a unit pattern structure having a fine pattern, and bonding cutting surfaces of at least two unit pattern structures. The cutting of the wafer comprises moving a focal position of the laser in a horizontal direction and changing the focal depth of the laser, such that the unit pattern structure has a cutting surface profile in which a first surface of the unit pattern structure on which the fine pattern is formed protrudes, in a direction substantially parallel to the first surface, from a second surface of the unit pattern structure that is opposite to the first surface.

A carrier substrate includes a base layer, an antireflection layer, and an energy absorption layer, wherein the antireflection layer is formed on one surface of the base layer and allows an elastic wave generated by a first laser beam transmitted through an element adhesively bonded to the antireflection layer to be transmitted through the base layer without being reflected towards the element, the first laser beam being applied to the element through a source substrate of the element, and the energy absorption layer is formed between the base layer and the antireflection layer to be aligned with the element, and evaporates upon energy absorption.

A laser crystallization device includes a laser oscillator, a stage, and a reflection unit. The stage is configured to support a substrate with a target film disposed on the substrate. The laser oscillator is configured to irradiate an incident laser beam on the target film. The stage is configured to move the substrate such that the incident laser beam scans the target film. The incident laser beam is reflected from the target film to generate a reflected laser beam. The reflection unit includes at least two reflection mirrors positioned at a path of the reflected laser beam. The reflection unit is configured to re-irradiate the reflected laser beam on the target film two or more times through a plurality of paths that are different from a path of the incident laser beam.

Methods of laser processing a transparent material are disclosed. The method may include positioning the transparent material on a carrier and transmitting a laser beam through the transparent material, where the laser beam may be incident on a side of the transparent material opposite the carrier. The transparent material may be substantially transparent to the laser beam and the carrier may include a support base and a laser disruption element. The laser disruption element may disrupt the laser beam transmitted through the transparent material such that the laser beam may not have sufficient intensity below the laser disruption element to damage the support base.

A wafer producing method for producing a hexagonal single crystal wafer from a hexagonal single crystal ingot including a separation start point forming step of setting the focal point of a laser beam inside the ingot at a predetermined depth from the ingot's upper surface, which depth corresponds to the thickness of the wafer to be produced, and next applying the laser beam to the upper surface of the ingot while relatively moving the focal point and the ingot to thereby form: (i) a modified layer parallel to the ingot's upper surface, and (ii) cracks extending from the modified layer, thus forming a separation start point. Preferably, the laser beam includes a plurality of laser beams to be simultaneously applied to form a plurality of linear modified layers. The focal points of the laser beams are arranged with predetermined spacing in the direction of formation of an off angle.

A height position of a surface of a wafer can be detected accurately and stably without being affected by variation in a thin film formed on the surface of the wafer. An AF (autofocus) device irradiates the surface of the wafer W with an AF laser beam, detects reflection light thereof for each wavelength with a detection optical system. An AF signal processing unit outputs a displacement signal indicating displacement of the surface of the wafer to a control unit on the basis of a detection result of the detection optical system. Moreover, the AF device includes a focus optical system disposed in an irradiation optical path which is an optical path from the light source unit to a light converging lens. The focus optical system adjusts a light converging point of the AF laser beam in a wafer thickness direction.

A substrate-cutting stage includes a main stage and a dummy stage spaced apart from each other with a cutting region interposed therebetween and that support a substrate. The main stage supports a first portion of the substrate, the dummy stage supports a second portion of the substrate, and the cutting region overlaps a to-be-cut portion of the substrate disposed between the first and second portions.