A holding table manufacturing method includes forming a plurality of first grooves in a front surface of a plate-shaped body, forming a plurality of second grooves in a back surface of the plate-shaped body, laying, on one another, a plurality of the plate-shaped bodies formed respectively with a plurality of the first grooves and a plurality of the second grooves and uniting the plate-shaped bodies together to form a suction plate, and accommodating the suction plate in an accommodating recess of a frame body to form a holding table. The first grooves and the second grooves do not reach side surfaces of the plate-shaped body, the first grooves and the second grooves communicate with each other, and the thickness of the suction plate is larger than the depth of the accommodating recess.

A laser processing apparatus includes a support part, a light source, a spatial light modulator, a converging part, and a controller. The controller controls the spatial light modulator so that laser light is branched into a plurality of rays of processing light including 0th-order light and a plurality of converging points for the plurality of rays of processing light are located at positions different from each other in a Z direction and an X direction, and controls at least one of the support part and the converging part so that the X direction coincides with an extension direction of a line and the plurality of converging points move relatively along the line. The controller controls the spatial light modulator so that a converging point of the 0th-order light is located one side with respect to a converging point of non-modulated light of the laser light, in a Y direction.

A method of manufacturing a thinned wafer by separating a residual wafer from the thinned wafer, the method including: a weak layer forming step of forming a planar weak layer WL along one surface WFA of a semiconductor wafer WF to divide the semiconductor wafer WF into a thinned wafer WF1 and a residual wafer WF2 with the weak layer WL as a boundary; and a separating step of supporting at least one of a thinned wafer WF1 side and a residual wafer WF2 side of the semiconductor wafer WF and separating the thinned wafer WF1 and the residual wafer WF2 from each other, wherein the separation of the thinned wafer WF1 and the residual wafer WF2 gradually progresses from one end WFF in an outer edge of the semiconductor wafer WF toward the other end WFR in the outer edge of the semiconductor wafer WF.

A layer on a substrate is laser annealed by pulses in a plurality of laser beams formed into a uniform line beam. The laser beams are partitioned into a first set of beams and a second set of beams. The second set of beams is incident onto the layer from a smaller range of angles than all of the beams combined. Pulses in the beams are synchronized such that pulses in the first set of beams are incident on the layer before pulses in the second set of beams. Pulses in the first set of beams melt the layer and pulses in the second set of beams sustain melting.

An apparatus for manufacturing a display device and a method for manufacturing a display device are provided. The apparatus includes a stage; a laser module disposed above the stage and configured to output a laser beam; a scanner configured to receive the laser beam output from the laser module and irradiate the laser beam onto the stage; and a controller configured to control the laser module to irradiate the laser beam to a processing position while moving both the scanner and the stage in a first direction according to the processing position and a shape of a processing pattern.

A peeling method at low cost with high mass productivity is provided. A silicon layer having a function of releasing hydrogen by irradiation with light is formed over a formation substrate, a first layer is formed using a photosensitive material over the silicon layer, an opening is formed in a portion of the first layer that overlaps with the silicon layer by a photolithography method and the first layer is heated to form a resin layer having an opening, a transistor including an oxide semiconductor in a channel formation region is formed over the resin layer, a conductive layer is formed to overlap with the opening of the resin layer and the silicon layer, the silicon layer is irradiated with light using a laser, and the transistor and the formation substrate are separated from each other.

A component joining apparatus, which can realize positioning between a component and a substrate with high accuracy by avoiding influence of thermal expansion of the substrate at the time of joining the component to the substrate by heating at a high temperature, includes a component supply head holding a component and a heating stage heating and holding a substrate, in which a heating region where the heating stage contacts the substrate includes a joining region of the substrate in which the component is joined, and the substrate is larger than the heating stage and a peripheral part of the substrate does not contact the heating stage.

A manufacturing method for a printed circuit board includes: passing a first laser beam output from a laser output device through a first aperture so as to define an outer diameter of the first laser beam, positioning the first laser beam by an optical axis positioning device including a galvano device and an fθ lens, and irradiating the printed circuit board with the first laser beam such that a through-hole is formed in a copper layer; and passing a second laser beam output from the laser output device through a second aperture so as to define an outer diameter of the second laser beam whereby a diameter of the second aperture is smaller than a diameter of the first aperture, positioning the second laser beam by the optical axis positioning device, and irradiating the printed circuit board with the second laser beam such that an insulating layer is processed.

A chuck for a laser beam wafer dicing equipment includes a wafer support plate having an upper surface for holding a wafer disposed on a dicing tape. The upper surface includes an annular groove that overlaps an edge of the wafer when the wafer disposed on the dicing tape is placed on the upper surface. The wafer support plate includes a ventilation channel configured to ventilate the annular groove.

A laser light irradiation device includes: a laser light source; a spatial light modulator including a display unit configured to display a phase pattern; an objective lens configured to condense a laser light emitted from the spatial light modulator at the object; an image-transfer optical system configured to transfer an image of the laser light on the display unit to an entrance pupil plane of the objective lens; a reflected light detector configured to detect reflected light of the laser light which is incident in the object and reflected by an opposite surface opposite to a laser light entrance surface; and a controller configured to control the phase pattern. When the reflected light detector detects the reflected light, the controller displays a reflected light aberration correction pattern which is the phase pattern correcting aberration generated in the event of the laser light being transmitted through the object having twice the predetermined thickness.