A machine featuring a treatment tool that grinds a surface to a desired profile, imparts a desired roughness to that surface, and removes contamination from the surface, the machine configured to control multiple independent input variables simultaneously, the controllable variables selected from the group consisting of (i) velocity, (ii) rotation, and (iii) dither of the treatment tool, and (iv) pressure of the treatment tool against the surface. The machine can move the treatment tool with six degrees of freedom.

A high-power slurry vacuum cart is well suited to collect and contain any slurry or wet residue produced through concrete and other surface processing operations. A multi-horsepower propane engine and propane tank are mounted on a mobile frame, along with a suction pump powered by the propane engine. A slurry containment vessel mounted on the frame has an input in communication with a squeegee and an output coupled to the suction pump. The squeegee may be adapted for floor contact to collect slurry for transfer to the slurry containment tank. The suction pump is directly coupled to the propane engine through a universal joint, thereby obviating the use of belts, chains or pulleys. The output of the pump may optionally be used as an air blower for surface drying, or the like, as well as use as an air blower to assist in emptying the slurry containment tank.

An SiC ingot forming method includes: a holding step of holding by a chuck table a cut section of a primitive SiC ingot cut from an SiC ingot growth base; a planarization step of grinding an end surface of the primitive SiC ingot held by the chuck table, to planarize the end surface; a c-plane detection step of detecting a c-plane of the primitive SiC ingot from the planarized end surface; a first end surface forming step of grinding the planarized end surface, to form a first end surface inclined at an off angle relative to the c-plane; and a second end surface forming step of holding the first end surface by the chuck table and grinding the cut section of the primitive SiC ingot in parallel to the first end surface, to form a second end surface.

A substrate processing method of processing a combined substrate in which a first substrate and a second substrate are bonded to each other includes forming a peripheral modification layer along a boundary between a peripheral portion of the first substrate as a removing target and a central portion of the first substrate; forming a non-bonding region in which bonding strength between the first substrate and the second substrate in the peripheral portion is reduced; and removing the peripheral portion starting from the peripheral modification layer. A first crack is developed from the peripheral modification layer toward the second substrate. The peripheral modification layer is formed such that a lower end of the first crack is located above the non-bonding region and an inner end of the non-bonding region is located at a diametrically outer side than the first crack.

A rotation controlling section of a control unit calculates a maximum thicknesswise difference in a wafer by using a noncontact thickness measuring instrument, and if the maximum thicknesswise difference exceeds a tolerance, relatively changes a rotational speed of a chuck table relative to a rotational speed of a spindle. This can shift a rotational speed ratio, which is a ratio between the rotational speed of the spindle and the rotational speed of the chuck table, from an integer. Therefore, the maximum thicknesswise difference can be made small through spark-out processing. As a result, cyclic variations in thickness value of the wafer are reduced, enabling planarization of a ground surface of the wafer.

A method includes bonding a first package component on a composite carrier, and performing a first polishing process on the composite carrier to remove a base carrier of the composite carrier. The first polishing process stops on a first layer of the composite carrier. A second polishing process is performed to remove the first layer of the composite carrier. The second polishing process stops on a second layer of the composite carrier. A third polishing process is performed to remove a plurality of layers in the composite carrier. The plurality of layers include the second layer, and the third polishing process stops on a dielectric layer in the first package component.

A grinding apparatus including a chuck table for holding a wafer, a grinding unit having a spindle for rotating a grinding wheel, an inclination adjusting unit for adjusting the inclination of the rotation axis of the chuck table with respect to the rotation axis of the spindle, a touch panel, and a control portion. The control portion is adapted to compare the information regarding the target sectional shape input into a target shape input field with the information regarding the present sectional shape input into a present shape input field and then control the inclination adjusting unit to change the inclination of the rotation axis of the chuck table so that the wafer is ground to obtain the target sectional shape of the wafer.

A polishing apparatus capable of forming a step-shaped recess having a right-angled cross section in an edge portion of a substrate, such as a wafer, is disclosed. The polishing apparatus includes: a substrate rotating device configured to rotate the substrate about a rotation axis; a first roller having a first circumferential surface configured to press a polishing tape against the edge portion of the substrate; and a second roller having a second circumferential surface in contact with the first circumferential surface. The second roller has a tape stopper surface that restricts movement of the polishing tape in a direction away from the rotation axis. The tape stopper surface is located radially outward of the first circumferential surface.

Disclosed is a polishing head for a polishing apparatus for polishing a quadrangular substrate using a polishing pad attached to a polishing table, comprising a head body portion, a plurality of elastic bags disposed in a surface of the head body portion, which is to face the polishing table, and a substrate holding plate for holding the substrate, the substrate holding plate being pressed by the elastic bags in a direction away from the head body portion, the head body portion being provided with channels for bags, which are in communication with the respective elastic bags, the polishing head further including at least two support plates disposed between the elastic bags on one hand and the substrate holding plate on the other, the elastic bags being configured to press the substrate holding plate through the support plates.

The present disclosure provides a leak test device, including: a test platform, the test platform being configured to carry and place a polishing head to be tested for leak, the polishing head being divided into one or more independent partitions, each of the partitions having a chamber correspondingly, and each chamber having vents correspondingly; an upper cover for sealing the chambers, the upper cover being located on the side of the chambers away from the test platform; and a movable device, the movable device being movable on a surface parallel to the test platform, movable in a direction perpendicular to the test platform, and also adapted to apply pressure on the upper cover so that the upper cover seals the chambers.