An accuracy of detecting a slip out of a substrate from a top ring is improved. A polishing unit 300 includes a polishing table 350, a top ring 302, a light emitting member 371, a slip-out detector 370, and an elimination mechanism 380. A polishing pad 352 that polishes a substrate WF is attached to the polishing table 350. The top ring 302 holds the substrate WF to press the substrate WF against the polishing pad 352. The light emitting member 371 emits a light to a detection area 372 on the polishing pad 352. The slip-out detector 370 detects a slip out of the substrate WF from the top ring 302 based on the light reflected from the detection area 372. The elimination mechanism 380 eliminates a polishing liquid flowing into the detection area 372.

According to one embodiment, a polishing apparatus includes a polishing head having a retainer surrounding a substrate to be polished, and a polishing pad facing the polishing head. The retainer includes a first material and a second material. The first material contains at least one of aromatic polyamide, polyphenylene sulfide, polyetherimide, polyamideimide, polyetheretherketone, or polybenzimidazole. The second material contains a fluororesin.

A method and apparatus for insitu adjustment of wafer slip detection during work piece polishing are disclosure. In one aspect, a chemical mechanical planarization (CMP) system, includes: a carrier configured to retain a substrate, a platen supporting a polishing pad, and a slip sensor configured to generate a signal indicative of a characteristic of a surface of the polishing pad. The system further includes a processor configured to: receive the signal from the slip sensor, calibrate a steady-state value of the signal when the CMP system is in a steady-state condition, compare the signal received from the slip sensor to the calibrated steady-state value during CMP polishing, and detect wafer slip in response to the signal received from the slip sensor during the CMP polishing differing from the calibrated steady-state value by more than a threshold value.

A substrate processing apparatus having a detecting unit that can detect an abnormality of a substrate such as a crack of the substrate or chipping of the substrate is disclosed. The substrate processing apparatus includes a polishing unit configured to polish a substrate, a cleaning unit configured to clean the polished substrate, a substrate abnormality detection unit configured to detect an abnormality of the substrate, and a substrate transporting mechanism configured to transport the substrate in the order of the polishing unit, the substrate abnormality detection unit, and the cleaning unit. The substrate abnormality detection unit includes an imaging device configured to image the substrate, and an output monitoring unit configured to determine a status of the substrate by comparing a signal obtained from the imaging device with a predetermined threshold.

In accordance with an embodiment, a manufacturing method of a semiconductor device includes detecting elastic waves, and detecting or predicting an abnormality of the processing object occurring during polishing of the processing object. The elastic waves are generated from the processing object during the polishing. The abnormality is detected or predicted by analyzing the detected elastic waves.

A semiconductor manufacturing apparatus and a method of manufacturing semiconductor device are provided. The semiconductor manufacturing apparatus includes a loading unit configured to load a wafer having a first surface to which a die attach film is attached through an ultraviolet sensitive layer, an ultraviolet light source configured to irradiate ultraviolet light onto the first surface of the wafer attached to the die attach film to weaken adhesive strength of the ultraviolet sensitive layer, and a camera configured to generate a wafer image by capturing ultraviolet light transmitted through a second surface of the wafer opposite to the first surface of the wafer.

A tool comprising a plurality of wear indicators is provided. The tool may be made from a rapid prototyping process. The tool may be used in an abrasive processing operation. The tool may comprise one or more control elements, (e.g., control geometries, part interfaces, fixture interfaces and/or the like). These control elements may comprise indicators of tool wear. The indicators may be inspected physically (e.g., by touch) and/or visually.

In an embodiment, a system includes: a pad comprising a first side and a second side opposite the first side, wherein the first side is configured to receive a wafer during chemical mechanical planarization (CMP), and a platen adjacent the pad along the second side, wherein the platen comprises a suction opening that interfaces with the second side; a pump configured to produce suction at the suction opening to adhere the second side to the platen; and a sensor configured to collect sensor data characterizing a uniformity of adherence between the pad and the platen, wherein the pump is configured to produce the suction at the suction opening based on the sensor data.

Accuracy of detection of a fly out of a substrate from a polishing head is improved. A substrate processing apparatus includes a polishing table 350 to which a polishing pad 352 for polishing the substrate is attachable, a polishing head 302 for holding and pressing the substrate against the polishing pad 352, a retainer member disposed surrounding the polishing head 302, a retainer member pressurization chamber disposed adjacent to the retainer member, an arm 360 for holding and turning the polishing head 302, and a slip out detector 910 for detecting a fly out of the substrate from the polishing head 302 based on a turning torque of the arm 360 or based on a flow rate of a fluid supplied to the retainer member pressurization chamber.

A method and apparatus for insitu adjustment of wafer slip detection during work piece polishing are disclosure. In one aspect, a chemical mechanical planarization (CMP) system, includes: a carrier configured to retain a substrate, a platen supporting a polishing pad, and a slip sensor configured to generate a signal indicative of a characteristic of a surface of the polishing pad. The system further includes a processor configured to: receive the signal from the slip sensor, calibrate a steady-state value of the signal when the CMP system is in a steady-state condition, compare the signal received from the slip sensor to the calibrated steady-state value during CMP polishing, and detect wafer slip in response to the signal received from the slip sensor during the CMP polishing differing from the calibrated steady-state value by more than a threshold value.