Implementations of the present disclosure generally relate to planarization of surfaces on substrates and on layers formed on substrates, including an apparatus for in-situ temperature control during polishing, and methods of using the same. More specifically, implementations of the present disclosure relate to in-situ temperature control with a condensed gas during a chemical-mechanical polishing (CMP) process. In one implementation, the method comprises polishing one or more substrates against a polishing surface in the presence of a polishing fluid during a polishing process to remove a portion of a material formed on the one or more substrates. A temperature of the polishing surface is monitored during the polishing process. Carbon dioxide snow is delivered to the polishing surface in response to the monitored temperature to maintain the temperature of the polishing surface at a target value during the polishing process.

Implementations of the present disclosure generally relate to planarization of surfaces on substrates and on layers formed on substrates, including an apparatus for in-situ temperature control during polishing, and methods of using the same. More specifically, implementations of the present disclosure relate to in-situ temperature control with a condensed gas during a chemical-mechanical polishing (CMP) process. In one implementation, the method comprises polishing one or more substrates against a polishing surface in the presence of a polishing fluid during a polishing process to remove a portion of a material formed on the one or more substrates. A temperature of the polishing surface is monitored during the polishing process. Carbon dioxide snow is delivered to the polishing surface in response to the monitored temperature to maintain the temperature of the polishing surface at a target value during the polishing process.

A conditioning method which can efficiently produce surface roughness of a polishing pad to obtain an optimum polishing rate by performing dressing while monitoring the surface roughness of the polishing pad and adjusting a temperature of the polishing pad is disclosed. The conditioning method includes measuring surface roughness of the polishing pad during dressing of the polishing pad, comparing the measured surface roughness with preset target surface roughness to obtain comparison result, and adjusting a surface temperature of the polishing pad by heating or cooling the polishing pad based on the comparison result. The surface roughness is represented by at least one of five indexes comprising arithmetical mean deviation of the roughness profile (Ra), root mean square deviation of the roughness profile (Rq), maximum profile valley depth of the roughness profile (Rv), maximum profile peak height of the roughness profile (Rp), and maximum height of the roughness profile (Rz).

A conditioning method which can efficiently produce surface roughness of a polishing pad to obtain an optimum polishing rate by performing dressing while monitoring the surface roughness of the polishing pad and adjusting a temperature of the polishing pad is disclosed. The conditioning method includes measuring surface roughness of the polishing pad during dressing of the polishing pad, comparing the measured surface roughness with preset target surface roughness to obtain comparison result, and adjusting a surface temperature of the polishing pad by heating or cooling the polishing pad based on the comparison result. The surface roughness is represented by at least one of five indexes comprising arithmetical mean deviation of the roughness profile (Ra), root mean square deviation of the roughness profile (Rq), maximum profile valley depth of the roughness profile (Rv), maximum profile peak height of the roughness profile (Rp), and maximum height of the roughness profile (Rz).

Containment and exhaust systems for substrate polishing components are disclosed. In one aspect, a substrate carrier head, includes a polishing pad, a substrate carrier head configured to retain a wafer against the polishing pad, an atomizer configured to atomize a liquid and spread a layer of the atomized liquid over a surface area of the polishing pad, and a chamber configured to contain and exhaust the atomized liquid.

A substrate polishing method for polishing a substrate through a polishing pad according to an embodiment may comprise: a preheating step of increasing the temperature of the polishing pad by supplying heated pure water to the polishing pad before polishing the substrate; and a temperature control step of controlling the temperature of the polishing pad by adjusting the temperature of the slurry supplied to the polishing pad in a polishing process of the substrate.

A substrate polishing method for polishing a substrate through a polishing pad according to an embodiment may comprise: a preheating step of increasing the temperature of the polishing pad by supplying heated pure water to the polishing pad before polishing the substrate; and a temperature control step of controlling the temperature of the polishing pad by adjusting the temperature of the slurry supplied to the polishing pad in a polishing process of the substrate.

A pad-temperature regulating apparatus is disclosed, which includes a heat exchanger capable of being cleaned in a limited space. A pad-temperature regulating apparatus includes a heat exchanger configured to contact a polishing pad to exchange heat with the polishing pad, a moving mechanism configured to move the heat exchanger between a temperature regulating position where the heat exchanger can exchange heat with the polishing pad, and a retreat position located on a side of the polishing pad, and a cleaning mechanism configured to clean the heat exchanger moved to the retreat position. The heat exchanger has an approximate triangular shape in a horizontal cross-section, and a longest side of the heat exchanger faces the polishing pad when the heat exchanger is moved to the retreat position.

A pad-temperature regulating apparatus is disclosed, which includes a heat exchanger capable of being cleaned in a limited space. A pad-temperature regulating apparatus includes a heat exchanger configured to contact a polishing pad to exchange heat with the polishing pad, a moving mechanism configured to move the heat exchanger between a temperature regulating position where the heat exchanger can exchange heat with the polishing pad, and a retreat position located on a side of the polishing pad, and a cleaning mechanism configured to clean the heat exchanger moved to the retreat position. The heat exchanger has an approximate triangular shape in a horizontal cross-section, and a longest side of the heat exchanger faces the polishing pad when the heat exchanger is moved to the retreat position.

The present invention relates to a method and a system of automatically calibrating a radiation thermometer disposed in a polishing apparatus. This method includes: placing a heating device (61), to which a measurement body (68) is attached, below the radiation thermometer (48); and using a controller (40) of the polishing apparatus coupled to the heating device (61) to heat a temperature of the measurement body (68) to a plurality of target temperatures (Ta), to measure the temperatures of the measurement body (68) at each target temperature (Ta) with the radiation thermometer (48), to calculate temperature deviation amounts which are differences between each of the target temperatures (Ta) and temperature output values of the radiation thermometer (48) corresponding to each target temperature (Ta), and to calibrate the radiation thermometer (48) so that all the temperature deviation amounts are within a preset reference range.