Patent classifications
B24B37/30
ADVANCED POLISHING PADS AND RELATED POLISHING PAD MANUFACTURING METHODS
Embodiments herein generally relate to polishing pads and method of forming polishing pads. In one embodiment, a polishing pad having a polishing surface that is configured to polish a surface of a substrate is provided. The polishing pad includes a polishing layer. At least a portion of the polishing layer comprises a continuous phase of polishing material featuring a plurality of first regions having a first pore-feature density and a plurality of second regions having a second pore-feature density that is different from the first pore-feature density. The plurality of first regions are distributed in a pattern in an X-Y plane of the polishing pad in a side-by-side arrangement with the plurality of second regions and individual portions or ones of the plurality of first regions are interposed between individual portions or ones of the plurality of second regions.
Novel chemical-mechanical polishing apparatus
An apparatus for performing a polishing process includes: a rotatable polishing pad; a temperature sensor configured to monitor a temperature on a top surface of the rotatable polishing pad; a first dispenser configured to dispense a first slurry that is maintained at a first temperature on the rotatable polishing pad; and a second dispenser configured to dispense a second slurry that is maintained at a second temperature on the rotatable polishing pad, wherein the second temperature is different from the first temperature so as to maintain the temperature on the top surface of the rotatable polishing pad at a substantially constant value.
METHOD, SYSTEM AND APPARATUS FOR UNIFORMED SURFACE MEASUREMENT
A system and a method for uniformed surface measurement are provided, in which a sensor is provided to perform measurements on a carrier in a polishing machine, and a measuring trajectory of the sensor on the carrier is adjusted by controlling the pivoting of a sensor carrier carrying the sensor and the rotation of a rotating platform in the polishing machine in order to achieve uniformed surface measurements of the carrier and real-time constructions of the surface topography. This allows the polishing state of the carrier to be monitored in real time, thereby improving the efficiency of the polishing process. A sensing apparatus for uniformed surface measurement is also provided.
METHOD, SYSTEM AND APPARATUS FOR UNIFORMED SURFACE MEASUREMENT
A system and a method for uniformed surface measurement are provided, in which a sensor is provided to perform measurements on a carrier in a polishing machine, and a measuring trajectory of the sensor on the carrier is adjusted by controlling the pivoting of a sensor carrier carrying the sensor and the rotation of a rotating platform in the polishing machine in order to achieve uniformed surface measurements of the carrier and real-time constructions of the surface topography. This allows the polishing state of the carrier to be monitored in real time, thereby improving the efficiency of the polishing process. A sensing apparatus for uniformed surface measurement is also provided.
Asymmetry Correction Via Oriented Wafer Loading
A method for chemical mechanical polishing includes receiving an angular removal profile for a carrier head and an angular thickness profile of a substrate. Prior to polishing the substrate, a desired angle of the carrier head relative to the substrate is selected for loading the substrate into the carrier head. Selecting the desired angle is performed based on a comparison of the angular removal profile for the carrier head and the angular thickness profile of the substrate to reduce angular non-uniformity in polishing. The carrier head is rotated to receive the substrate at the desired angle, the substrate is transferred to the carrier head and loaded in the carrier head with the carrier head at the desired angle relative to the substrate, and the substrate is polished.
Asymmetry Correction Via Oriented Wafer Loading
A method for chemical mechanical polishing includes receiving an angular removal profile for a carrier head and an angular thickness profile of a substrate. Prior to polishing the substrate, a desired angle of the carrier head relative to the substrate is selected for loading the substrate into the carrier head. Selecting the desired angle is performed based on a comparison of the angular removal profile for the carrier head and the angular thickness profile of the substrate to reduce angular non-uniformity in polishing. The carrier head is rotated to receive the substrate at the desired angle, the substrate is transferred to the carrier head and loaded in the carrier head with the carrier head at the desired angle relative to the substrate, and the substrate is polished.
POLISHING APPARATUS AND POLISHING METHOD
A polishing apparatus for performing polishing between a polishing pad and a semiconductor wafer disposed to face the polishing pad includes a polishing table for holding the polishing pad, a top ring for holding the semiconductor wafer, a swing arm for holding the top ring, and a swing shaft motor for causing the swing arm to swing. The polishing apparatus further includes an arm torque detection section that detects an arm torque imparted to the swing arm when the swing arm is swinging in a predetermined angle range, and an endpoint detection section that detects a polishing endpoint indicating the end of polishing on the basis of the arm torque detected by the arm torque detection section.
POLISHING APPARATUS AND POLISHING METHOD
A polishing apparatus for performing polishing between a polishing pad and a semiconductor wafer disposed to face the polishing pad includes a polishing table for holding the polishing pad, a top ring for holding the semiconductor wafer, a swing arm for holding the top ring, and a swing shaft motor for causing the swing arm to swing. The polishing apparatus further includes an arm torque detection section that detects an arm torque imparted to the swing arm when the swing arm is swinging in a predetermined angle range, and an endpoint detection section that detects a polishing endpoint indicating the end of polishing on the basis of the arm torque detected by the arm torque detection section.
Substrate processing apparatus and substrate holding apparatus
A substrate processing apparatus which can remove foreign matters attached to the entire upper surface of a substrate such as a wafer is disclosed. The substrate processing apparatus includes: a substrate holding apparatus; and a processing head configured to scrub an upper surface of a substrate. The substrate holding apparatus includes: a substrate holder configured to hold the substrate; and a substrate rotating mechanism configured to rotate the substrate held by the substrate holder. The substrate holder is disposed below the upper surface of the substrate so as not to project above the upper surface of the substrate in a state where the substrate is held by the substrate holder.
Substrate processing apparatus and substrate holding apparatus
A substrate processing apparatus which can remove foreign matters attached to the entire upper surface of a substrate such as a wafer is disclosed. The substrate processing apparatus includes: a substrate holding apparatus; and a processing head configured to scrub an upper surface of a substrate. The substrate holding apparatus includes: a substrate holder configured to hold the substrate; and a substrate rotating mechanism configured to rotate the substrate held by the substrate holder. The substrate holder is disposed below the upper surface of the substrate so as not to project above the upper surface of the substrate in a state where the substrate is held by the substrate holder.