A grinding equipment includes: a frame which has a central shaft disposed collinearly to one side of the polishing wheel and rotates about the central shaft; a plurality of seating portions which are disposed on the upper side of the frame, each have a space formed in the central portion thereof, seat a workpiece on the upper surfaces thereof, and are arranged radially from the central shaft of the frame; a plurality of vacuum portions which are disposed in the central portions of the plurality of seating portions respectively, seat the workpiece on the upper surfaces thereof, and each have a plurality of flow channels so as to secure the workpiece by suctioning air through the flow channels; and a control unit for controlling the rotation of the frame.

A polishing apparatus includes a holding table having a holding surface that holds a wafer, a polishing unit in which a polishing pad having an opening at the center of a polishing surface that polishes the wafer is mounted to a spindle and is rotated, a slurry supply unit that supplies slurry to the polishing surface of the polishing pad, and an air supply unit that shuts an upper end of a penetrating path penetrating through the axial center of rotation of the polishing pad and the spindle and supplies air into the penetrating path.

A polishing apparatus includes a holding table having a holding surface that holds a wafer, a polishing unit in which a polishing pad having an opening at the center of a polishing surface that polishes the wafer is mounted to a spindle and is rotated, a slurry supply unit that supplies slurry to the polishing surface of the polishing pad, and an air supply unit that shuts an upper end of a penetrating path penetrating through the axial center of rotation of the polishing pad and the spindle and supplies air into the penetrating path.

A polishing head capable of preventing contact between both side walls of an elastic membrane when a negative pressure is formed in a pressure chamber formed by the elastic membrane. The polishing head includes: a first elastic membrane configured to press the workpiece against the polishing pad; a retainer ring surrounding the first elastic membrane; a second elastic membrane configured to press the retainer ring against the polishing pad; a carrier to which the first elastic membrane is secured; and an attachment member arranged in a pressure chamber formed by the second elastic membrane and fixing the second elastic membrane to the carrier. The attachment member has a support portion extending toward the retainer ring along a side wall of the second elastic membrane.

A polishing head capable of preventing contact between both side walls of an elastic membrane when a negative pressure is formed in a pressure chamber formed by the elastic membrane. The polishing head includes: a first elastic membrane configured to press the workpiece against the polishing pad; a retainer ring surrounding the first elastic membrane; a second elastic membrane configured to press the retainer ring against the polishing pad; a carrier to which the first elastic membrane is secured; and an attachment member arranged in a pressure chamber formed by the second elastic membrane and fixing the second elastic membrane to the carrier. The attachment member has a support portion extending toward the retainer ring along a side wall of the second elastic membrane.

A grinding apparatus includes a chuck table that holds a wafer on a holding surface; a grinding unit that has a spindle unit in which a spindle with an annular grindstone mounted to a tip thereof is rotatably supported and that grinds the wafer by use of the grindstone; a grinding feeding mechanism that puts the grinding unit into grinding feeding in a grinding feeding direction perpendicular to the holding surface; a first height gauge that measures the height of the holding surface; a second height gauge that measures the height of an upper surface of the wafer; and a calculation section that calculates the difference between the height of the holding surface and the height of the upper surface of the wafer, as the thickness of the wafer. In the grinding apparatus, the first height gauge and the second height gauge are disposed in the grinding unit.

A grinding apparatus includes a chuck table that holds a wafer on a holding surface; a grinding unit that has a spindle unit in which a spindle with an annular grindstone mounted to a tip thereof is rotatably supported and that grinds the wafer by use of the grindstone; a grinding feeding mechanism that puts the grinding unit into grinding feeding in a grinding feeding direction perpendicular to the holding surface; a first height gauge that measures the height of the holding surface; a second height gauge that measures the height of an upper surface of the wafer; and a calculation section that calculates the difference between the height of the holding surface and the height of the upper surface of the wafer, as the thickness of the wafer. In the grinding apparatus, the first height gauge and the second height gauge are disposed in the grinding unit.

A polishing apparatus includes a polishing device, a polishing fixing device, and a controller. The polishing fixing device includes a rotating mechanism, a sensor, a movement compensation assembly, a first moving assembly and a second moving assembly. The sensor in the polishing fixing device senses pressure applied to the workpiece during polishing, the movement compensation assembly can drive the rotating mechanism to move in compensation, so as to keep the polishing pressure within a certain range for uniformity in polishing, improving the polishing quality and production efficiency of the workpiece.

A method of controlling polishing includes polishing a substrate, monitoring the substrate during polishing with an in-situ monitoring system, filtering a signal from the monitoring system to generate a filtered signal, and determining at least one of a polishing endpoint or an adjustment for a polishing rate from the filtered signal. The filtering includes modelling a plurality of periodic disturbances at a plurality of different frequencies using a plurality of disturbance states, modelling an underlying signal using a plant state, and applying a linear prediction filter to the plant state and the plurality of disturbance states to generate a filtered signal representing the underlying signal.

An apparatus comprises a flexible membrane for use with a carrier head of a substrate chemical mechanical polishing apparatus. The membrane comprises an outer surface providing a substrate receiving surface, wherein the outer surface has a central portion and an edge portion surrounding the central portion, wherein the central portion has a first surface roughness and the edge portion has a second surface roughness, the first surface roughness being greater than the second surface roughness.