The polishing apparatus includes: a holding section that holds a material to be polished; the polishing body that polishes the material to be polished held by the holding section; the head that supports the polishing body via the elastic mechanism; a driving mechanism that causes the head to be moved in a Z coordinate direction; and a control unit that is connected to the driving mechanism and controls the driving mechanism. A load measurement device to measure a load applied to the polishing body is attached to the head, and the load measurement device is connected to the polishing body via the elastic mechanism.

To provide a polishing apparatus capable of avoiding an overshoot with respect to a target load at the time of polishing, which is caused when position control is switched to load control in the polishing apparatus of a type where a polishing body is supported by a head via an elastic mechanism.

A polishing apparatus includes: a holding section that holds a material to be polished; a polishing body that polishes the material to be polished held by the holding section; a head that supports the polishing body via an elastic mechanism; a driving mechanism that causes the head to be moved in a Z coordinate direction; a control unit that controls the driving mechanism; and a position sensor that measures a position of the polishing body with respect to the head. The load control is performed based on a measurement value of the position sensor and a spring constant value of the elastic mechanism.

To provide a polishing apparatus capable of avoiding an overshoot with respect to a target load at the time of polishing, which is caused when position control is switched to load control in the polishing apparatus of a type where a polishing body is supported by a head via an elastic mechanism.

A polishing apparatus includes: a holding section that holds a material to be polished; a polishing body that polishes the material to be polished held by the holding section; a head that supports the polishing body via an elastic mechanism; a driving mechanism that causes the head to be moved in a Z coordinate direction; a control unit that controls the driving mechanism; and a position sensor that measures a position of the polishing body with respect to the head. The load control is performed based on a measurement value of the position sensor and a spring constant value of the elastic mechanism.

A polishing apparatus has a polishing pad, a top ring for holding a semiconductor wafer, and a vertical movement mechanism operable to move the top ring in a vertical direction. The polishing apparatus also has a distance measuring sensor operable to detect a position of the top ring when a lower surface of the top ring is brought into contact with the polishing pad, and a controller operable to calculate an optimal position of the top ring to polish the semiconductor wafer based on the position detected by the distance measuring sensor. The vertical movement mechanism includes a ball screw mechanism operable to move the top ring to the optimal position.

A polishing apparatus has a polishing pad, a top ring for holding a semiconductor wafer, and a vertical movement mechanism operable to move the top ring in a vertical direction. The polishing apparatus also has a distance measuring sensor operable to detect a position of the top ring when a lower surface of the top ring is brought into contact with the polishing pad, and a controller operable to calculate an optimal position of the top ring to polish the semiconductor wafer based on the position detected by the distance measuring sensor. The vertical movement mechanism includes a ball screw mechanism operable to move the top ring to the optimal position.

A substrate polishing apparatus is disclosed that includes a polishing platform having two or more zones, each zone adapted to receive a different slurry component. A substrate polishing system is provided having a holder to hold a substrate, a polishing platform having a polishing pad, and a distribution system adapted to dispense, in a timed sequence, at least two different slurry components selected from a group consisting of an oxidation slurry component, a material removal slurry component, and a corrosion inhibiting slurry component. Polishing methods and systems adapted to polish substrates are provided, as are numerous other aspects.

A substrate polishing apparatus is disclosed that includes a polishing platform having two or more zones, each zone adapted to receive a different slurry component. A substrate polishing system is provided having a holder to hold a substrate, a polishing platform having a polishing pad, and a distribution system adapted to dispense, in a timed sequence, at least two different slurry components selected from a group consisting of an oxidation slurry component, a material removal slurry component, and a corrosion inhibiting slurry component. Polishing methods and systems adapted to polish substrates are provided, as are numerous other aspects.

A polishing system for polishing a semiconductor wafer includes a wafer support for holding the semiconductor wafer, and a first polishing pad for polishing a region of the semiconductor wafer. The semiconductor wafer has a first diameter, and the first polishing pad has a second diameter shorter than the first diameter.

A polishing module including a chuck having a substrate receiving surface and a perimeter, and one or more polishing pad assemblies positioned about the perimeter of the chuck, wherein each of the one or more polishing pad assemblies are coupled to an actuator that provides movement of the respective polishing pad assemblies in one or more of a sweep direction, a radial direction, and a oscillating mode relative to the substrate receiving surface and are limited in radial movement to about less than one-half of the radius of the chuck as measured from the perimeter of the chuck.

A polishing module including a chuck having a substrate receiving surface and a perimeter, and one or more polishing pad assemblies positioned about the perimeter of the chuck, wherein each of the one or more polishing pad assemblies are coupled to an actuator that provides movement of the respective polishing pad assemblies in one or more of a sweep direction, a radial direction, and a oscillating mode relative to the substrate receiving surface and are limited in radial movement to about less than one-half of the radius of the chuck as measured from the perimeter of the chuck.