A dedusting device, such as for a sander, for dedusting particles from a narrow edge of a workpiece has a nozzle device designed to remove the particles from the edge with a blasting fluid. The nozzle device has at least one nozzle outlet opening through which the blasting fluid emerges for dedusting in a blasting region. An exhaust air device designed to extract by suction the particles removed from the narrow edge of the workpiece (has at least one exhaust air inlet opening through which a blasting fluid containing particles enters. A supporting device which, in the operating state, is used for the workpiece to bear against. The supporting device is arranged between the nozzle device and the exhaust air device.

A grinding machine and a method for grinding large crankshafts are disclosed. During pre-grinding, steady-rest seats are ground, and a plurality of steady rests are placed against them. Synchronous electric drives drive the crankshaft at both ends. A desired shape is produced by interpolating motion of a first grinding disk about CNC-controlled X and Z axes and about a WK pivot axis. The grinding disk is a CBN grinding disk with a width less than the axial length of the main journals and crankpins of the crankshaft. Diameters are measured along the axial length of the main journals and/or crankpins by an in-process device. The drives for the X1, Z1, and WK axes are controlled in an interpolating manner on the basis of the measurements to achieve the desired shape.

A grinding machine and a method for grinding large crankshafts are disclosed. During pre-grinding, steady-rest seats are ground, and a plurality of steady rests are placed against them. Synchronous electric drives drive the crankshaft at both ends. A desired shape is produced by interpolating motion of a first grinding disk about CNC-controlled X and Z axes and about a WK pivot axis. The grinding disk is a CBN grinding disk with a width less than the axial length of the main journals and crankpins of the crankshaft. Diameters are measured along the axial length of the main journals and/or crankpins by an in-process device. The drives for the X1, Z1, and WK axes are controlled in an interpolating manner on the basis of the measurements to achieve the desired shape.

A polishing apparatus and a polishing method capable of accurately measuring a film thickness of a workpiece, such as wafer, substrate, or panel, used in manufacturing of semiconductor devices during polishing of the workpiece are disclosed. The processing system is configured to determine a film thickness of the workpiece based on relative reflectance data calculated by a calculation formula expressed as: the relative reflectance data=MD1/[BD1.Math.k], where MD1 represents first intensity measurement data indicating intensity of the reflected light from the workpiece measured by the first spectrometer, BD1 represents the first base intensity data, and k represents a rate of change in second intensity measurement data with respect to the second base intensity data. The second intensity measurement data is indicative of intensity of the light of the light source measured by the second spectrometer during polishing of the workpiece.

A grinder selection device includes: an input unit that inputs a grinding condition for a workpiece as a grinding target of grinding machining including at least the geometry of the workpiece and vibration data indicating vibration of a grinding machine, and grinder information about one or more grinders as grinder candidates to be used for the grinding machining; a learned model acquired through supervised learning using training data containing input data and label data, the input data containing an arbitrary grinding condition for a workpiece as a grinding target of grinding machining by an arbitrary grinding machine including at least the geometry of the workpiece and vibration data indicating vibration of the grinding machine, and grinder information about an arbitrary grinder, the label data being data indicating the adequacy or inadequacy of a combination between the grinding condition and the grinder information about the grinder; and a judgment unit.

A grinder selection device includes: an input unit that inputs a grinding condition for a workpiece as a grinding target of grinding machining including at least the geometry of the workpiece and vibration data indicating vibration of a grinding machine, and grinder information about one or more grinders as grinder candidates to be used for the grinding machining; a learned model acquired through supervised learning using training data containing input data and label data, the input data containing an arbitrary grinding condition for a workpiece as a grinding target of grinding machining by an arbitrary grinding machine including at least the geometry of the workpiece and vibration data indicating vibration of the grinding machine, and grinder information about an arbitrary grinder, the label data being data indicating the adequacy or inadequacy of a combination between the grinding condition and the grinder information about the grinder; and a judgment unit.

A device for robot-assisted machining of surfaces is described below. According to an example, the device has a retainer with a base plate designed for mounting on a manipulator and has an assembly suspended on the retainer, the assembly comprising a machine tool. The retainer has a tilt mechanism which couples the assembly to the retainer in such a way that the assembly can be tilted relative to the base plate about two axes of rotation, wherein the two axes of rotation can intersect with one another and run through the assembly below the base plate.

A substrate processing apparatus 1 is configured to supply a processing liquid to a peripheral portion of a wafer W being rotated. The substrate processing apparatus 1 includes a rotating/holding unit 21 configured to rotate and hold the wafer W; a processing liquid discharging unit 73 configured to discharge the processing liquid toward the peripheral portion of the wafer W held by the rotating/holding unit 21; a variation acquiring unit configured to acquire information upon a variation amount of a deformation of the peripheral portion of the wafer W; and a discharge controller 7 configured to control a discharge angle and a discharge position of the processing liquid from the processing liquid discharging unit 73 onto the peripheral portion based on the information upon the variation amount of the deformation of the peripheral portion acquired by the variation acquiring unit.

An apparatus for chemical mechanical polishing includes a support for a polishing pad having a polishing surface, and an electromagnetic induction monitoring system to generate a magnetic field to monitor a substrate being polished by the polishing pad. The electromagnetic induction monitoring system includes a core and a coil wound around a portion of the core. The core includes a back portion, a center post extending from the back portion in a first direction normal to the polishing surface, and an annular rim extending from the back portion in parallel with the center post and surrounding and spaced apart from the center post by a gap. A width of the gap is less than a width of the center post, and a surface area of a top surface of the annular rim is at least two times greater than a surface area of a top surface of the center post.

The present invention relates to a polishing method and a polishing apparatus for polishing a substrate, such as a wafer. The present invention further relates to a computer-readable storage medium storing a program for causing the polishing apparatus to perform the polishing method. The polishing method includes: rotating a polishing table (3); and polishing a substrate (W) by pressing the substrate (W) against a polishing surface (2a). Polishing the substrate (W) includes a film-thickness profile adjustment process and a polishing-end-point detection process. The film-thickness profile adjustment process includes adjusting pressing forces on the substrate (W) against the polishing surface (2a) based on a plurality of film thicknesses, and determining a point in time at which a film-thickness index value has reached a film-thickness threshold value. The film-thickness index value is determined from at least one of the plurality of film thicknesses. The polishing-end-point detection process includes measuring a torque for rotating the polishing table (3) and determining a polishing end point based on the torque.