Embodiments of an enclosure including a substrate having an anti-fingerprint surface are disclosed. The anti-finger print surface may include a textured surface, a coated surface or a coated textured surface that exhibits a low fingerprint visibility, when a fingerprint is applied to the anti-fingerprint surface. In one or more embodiments, the enclosure exhibits any one of the following attributes (1) radio, and microwave frequency transparency, as defined by a loss tangent of less than 0.03 and at a frequency range of between 15 MHz to 3.0 GHz; (2) infrared transparency; (3) a fracture toughness of greater than 0.6 MPa.Math.m.sup.1/2; (4) a 4-point bend strength of greater than 350 MPa; (5) a Vickers hardness of at least 450 kgf/mm.sup.2 and a Vickers median/radial crack initiation threshold of at least 5 kgf; (6) a Young's Modulus in the range from about 50 GPa to about 100 GPa; and (7) a thermal conductivity of less than 2.0 W/m? C.

Bead blasting the inner, contact surface of an electrochemical cell casing to render the inner surface thereof essentially contamination free and suitable as a current collector is described. The casing is preferably of stainless steel and houses the alkali metal-halogen couple in a case-positive configuration.

An object of the present invention is to provide a dry ice cleaning apparatus for a semiconductor wafer and a method for cleaning a semiconductor wafer that can reduce the amount of particles remaining on the surface of a semiconductor wafer, suppress a decrease of cleaning effects due to ice formation, and continuously and effectively clean a large amount of semiconductor wafers. The present invention provides a dry ice cleaning apparatus for a semiconductor wafer including a cleaning chamber (1) into which the semiconductor wafers (W) are sequentially carried in and which has an internal space (11) for cleaning the semiconductor wafers (W), an inject cleaning nozzle (5) that is disposed in the internal space (11) of the cleaning chamber (1) and injects the dry ice (D) toward the cleaning surface of the semiconductor wafer (w), and a transfer robot (2) that is disposed in the internal space (11) of the cleaning chamber (1) and sequentially carries the semiconductor wafers (W) from the outside of the cleaning chamber (1) into the internal space (11); and wherein while the transfer robot (2) holding the semiconductor wafer (W) carried into the internal space (11) non-horizontally, the inject cleaning nozzle (5) injects the dry ice (D) onto the semiconductor wafer (W).

A method for forming contact surfaces by peeling the insulation on the insulated conductor busbars for energy distribution systems.

A method for forming track(s) on low temperature co-fired ceramic (LTCC) substrate, the method comprising the steps of, forming a layer of coating material on an operative face of the LTCC substrate, disposing a stencil on the layer of coating material thereby covering a selected portion of the layer of coating material while leaving exposed a portion of the layer of coating material corresponding to the track(s) to be formed and forming an assembly of the LTCC substrate, the layer of coating material and the stencil, eroding the exposed portion of the layer of coating material by propelling an abrasive material using a blasting gun towards the assembly on the face on which the layer of coating material is formed and the stencil is disposed and separating the stencil from the abraded assembly, wherein the abrasive material has a composition that is compatible with that of the LTCC substrate.

The present invention is embodied in a carbon dioxide compression and delivery device that uses a plurality of reversible thermoelectric devices and to a method to operate such carbon dioxide compression and delivery device.

Provided is a method for manufacturing a magnetostrictive torque sensor shaft mounting a sensor portion of a magnetostrictive torque sensor. The method includes conducting heat treatment on a shaft material including chrome steel or chrome-molybdenum steel by carburizing, quenching and tempering, and conducting shot peening on the shaft material after the heat treatment at least on a position where the sensor portion is to be mounted. The shot peening is conducted by firing shot with a particle size of not less than 0.6 mm and a Rockwell hardness of not less than 60 at a jet pressure of not less than 0.4 MPa for a jet exposure time of not less than 2 minutes.

Provided is a method for preventing the elution of Bi from copper alloy, in which the elution of Bi is prevented in leadless copper-alloy plumbing equipment and the like containing a trace of lead and a predetermined amount of Bi. The present invention relates to a method for preventing the elution of Bi from copper alloy in which at least Bi present on the surface of copper alloy containing Bi is selectively removed by preferentially dissolving Bi in a 4 to 20 mass % concentration of nitric acid while suppressing Cu dissolution. Furthermore, elution of Pb is suppressed using a 10-20 mass % concentration of nitric acid. In this case, by removing at least Bi present on the surface of copper alloy containing Bi using nitric acid and then treating the surface of the copper alloy by shot-blasting corrosive products, such as oxides, produced from the nitric acid are removed, and gloss is imparted to the surface.

This electric current transmission cable includes a non-anodized bare conductor based on aluminum or an aluminum alloy having a hydrophilic external specific surface intended to be in contact with the atmospheric environment, and an inside volume intended to conduct an electric current. The external specific surface of the bare conductor has a first roughness parameter, defined as the arithmetic mean deviation, measurable by profilometry, of peaks and valleys in comparison to a predetermined average profile over a reference length or surface, equal to or greater than 1.9 m. In addition, the inside volume of the bare conductor has oxygen doping of its aluminum-based or aluminum alloy-based components at a ratio equal to or greater than 20%, to a depth of at least 300 nm with respect to the external specific surface.

A method for selectively removing portions of a protective coating from a substrate, such as an electronic device, includes removing portions of the protective coating from the substrate. The removal process may include cutting the protective coating at specific locations, then removing desired portions of the protective coating from the substrate, or it may include ablating the portions of the protective coating that are to be removed. Coating and removal systems are also disclosed.