Embodiments relate to a polishing pad for use in a chemical mechanical planarization (CMP) process of semiconductors, a process for preparing the same, and a process for preparing a semiconductor device using the same. In the polishing pad according to the embodiment, the size (or diameter) and distribution of a plurality of pores are adjusted, whereby the polishing performance such as polishing rate and within-wafer non-uniformity can be further enhanced.

Embodiments relate to a porous polyurethane polishing pad for use in a chemical mechanical planarization and a process for preparing the same. It is possible to control the size and distribution of pores in the porous polyurethane polishing pad by using thermally expanded microcapsules and an inert gas as a gas phase foaming agent, whereby the polishing performance thereof can be adjusted.

A method for preparing a polishing pad includes: preparing a polishing pad transition structure formed with a plurality of grooves, openings of the plurality of grooves being all located on a same side surface of the polishing pad transition structure; filling the plurality of grooves of the polishing pad transition structure with inorganic nanoparticles; pouring a mixture of a liquid polymer and a curing agent on the polishing pad transition structure, and evacuating air in the liquid polymer and the plurality of grooves; and placing the polishing pad transition structure in an environment at a temperature higher than or equal to a first temperature threshold, and the cured liquid polymer and the polishing pad transition structure constituting the polishing pad.

The present disclosure provides abrasive articles that include an abrasive layer having a contact surface, a first layer coupled to the abrasive layer, and a second layer coupled to the first layer. The first layer is configured to provide contact pressure to the abrasive layer, such as through a higher hardness than the second layer. The second layer is configured to provide conformability to the abrasive layer, such as through a higher compressibility than the first layer. The resulting abrasive articles may exert a consistent contact pressure against a substrate with increased conformability around the substrate, reduced hysteresis, improved removal rate consistency, and/or improved lifetime over abrasive articles that do not use the multiple layer construction described above.

A method for preparing a polishing pad includes: preparing a polishing pad transition structure formed with a plurality of grooves, openings of the plurality of grooves being all located on a same side surface of the polishing pad transition structure; filling the plurality of grooves of the polishing pad transition structure with inorganic nanoparticles; pouring a mixture of a liquid polymer and a curing agent on the polishing pad transition structure, and evacuating air in the liquid polymer and the plurality of grooves; and placing the polishing pad transition structure in an environment at a temperature higher than or equal to a first temperature threshold, and the cured liquid polymer and the polishing pad transition structure constituting the polishing pad.

The polishing pad according to an embodiment adjusts the content of elements present in the polishing layer, thereby controlling the bonding strength between the polishing pad and the polishing particles and enhancing the bonding strength between the polishing particles and the semiconductor substrate (or wafer), resulting in an increase in the polishing rate. It is possible to enhance not only the mechanical properties of the polishing pad such as hardness, tensile strength, elongation, and modulus, but also the polishing rate for both a tungsten layer or an oxide layer. Accordingly, it is possible to efficiently fabricate a semiconductor device of excellent quality using the polishing pad.

The polishing pad according to an embodiment comprises a multifunctional low-molecular-weight compound as one of the polymerization units of the polyurethane-based resin that constitutes the polishing layer, thereby reducing the unreacted diisocyanate monomer in the production process to enhance the processability and quality and to increase the crosslinking density. Thus, the polishing pad may be applied to a process of preparing a semiconductor device, which comprises a CMP process, to provide a semiconductor device such as a wafer of excellent quality.

Embodiments relate to a polishing pad for use in a chemical mechanical planarization (CMP) process of semiconductors, a process for preparing the same, and a process for preparing a semiconductor device using the same. In the polishing pad according to the embodiment, the size (or diameter) and distribution of a plurality of pores are adjusted, whereby the polishing performance such as polishing rate and within-wafer non-uniformity can be further enhanced.

The invention provides a composition for preparing a chemical-mechanical polishing pad via photopolymerization, comprising one or more acrylate urethane oligomers, one or more acrylate monomers and at least one photo-polymerization initiator. The invention also provides a method of forming a chemical-mechanical polishing pad comprising; preparing composition comprising one or more acrylate urethane oligomers, one or more acrylate monomers and at least one photo-polymerization initiator. The method further comprising exposing at least a layer of the composition to ultraviolet light, thereby initiating a polymerization reaction and thus forming at least a layer of solidified pad material.

Methods of making an abrasive article. Abrasive particles are loaded to a distribution tool including a plurality of strips defining a plurality of channels. Each channel is open to a lower side of the tool. The loaded particles are distributed from the distribution tool to a major face of a backing web below the lower side. At least a majority of the particles distributed from the tool undergo an orientation sequence in which each particle first enters one of the channels. The particle then passes partially through the channel such that a first portion is beyond the lower side and in contact with the major face, and a second portion within the channel. The sequence then includes the particle remaining in simultaneous contact with one of the strips and the major face for a dwell period.