A cutting device of a silicon rod cutting system, and the silicon rod cutting system. The cutting device includes: a support frame, installed on a machine base of the silicon rod cutting system; two cutting machine head mechanisms, wherein each cutting machine head mechanism is provided with a diamond wire, a cutting segment of the diamond wire is used for cutting a silicon rod from top to bottom while moving; and a feeding mechanism, wherein the support frame is connected with the two cutting machine head mechanisms by means of the feeding mechanism, and the two cutting segments are disposed opposite to each other; and the feeding mechanism is used for driving the two cutting machine head mechanisms to move towards and away from each other, so as to adjust the distance between the two cutting segments.

A method for slicing an ingot, including: forming a wire row by a wire spirally wound between a plurality of wire guides and configured to travel in an axial direction; and pressing an ingot against the wire row while supplying a contact portion between the ingot and the wire with a slurry from a nozzle, thereby slicing the ingot into wafers. The slurry is supplied such that slurries whose temperatures are separately controlled by two or more lines of heat exchangers are respectively supplied from two or more sections of the nozzle which are orthogonal to a travelling direction of the wire row. Consequently, a wire saw and a method for slicing an ingot are provided which enable separate control of wafer shapes depending on ingot-slicing positions.

After ultrasonic waves have been applied via a layer of liquid to an ingot for separating the ingot along separation layers formed therein to thereby produce a wafer from the ingot, the wafer and the ingot are moved relatively to each other along a direction in which the separation layers extend, thereby pulling apart the wafer and the ingot from each other.

A method of producing a group III nitride single crystal substrate includes: processing a face of a group III nitride single crystal layer of a layered body, so that the face is parallel to a crystal lattice plane, the layered body including a base substrate, and the group III nitride single crystal layer over the base substrate; after said processing, cutting and separating a group III nitride single crystal in a form of plate from the base substrate or the group III nitride single crystal layer, or cutting and separating the base substrate and the group III nitride single crystal layer on an interface therebetween in a form of plate; and after said cutting and separating, polishing a cut surface of the group III nitride single crystal, the cut surface being formed by said cutting.

Disclosed are a lower jacking member, a wire withdrawal method based on the lower jacking member, and a squaring machine including the lower jacking member. The lower jacking member is used for axially fixing a bottom surface of an edge scrap formed by cutting a round rod, and a bottom outline of the edge scrap has a cutting edge. The lower jacking member includes at least two single components, and drive structures independently connected to the single components. A spacing between at least one of the single components and the cutting edge is different from a spacing between the rest of the single components and the cutting edge; and the drive structures are used for driving tops of the single components to abut against the bottom surface of the edge scrap.

A method of slicing wafers from a monocrystalline semiconductor ingot includes attaching a circumferential edge of the ingot to a bond beam and positioning sacrificial disks adjacent longitudinal end faces of the ingot. One sacrificial disk is positioned adjacent each of the longitudinal end faces. The method also includes connecting the bond beam to a wire saw that includes a wire web and performing a slicing operation on the ingot by operating the wire saw to drive the wire web and move the bond beam and the ingot in a movement direction towards the wire web to slice the wafers from the ingot. The sacrificial disks operate to inhibit uncontrolled breakage of the wafers during the slicing operation

A method for cutting a monocrystalline silicon square rod may include the steps of: loading: providing a square rod on a working platform and clamping the square rod, and lowering the square rod until it comes into contact with a diamond wire; cutting: setting cutting parameters, and cutting the square rod by forward and reverse reciprocating movement along the diamond wire, wherein during cutting process, first speed of the working platform varies synchronously with wire speed; and unloading: unloading after the cutting step is finished, wherein the square rod is gradually separated from the diamond wire.

The present invention discloses a cutting device, where the cutting device includes a cutting head, a main shaft system, four eccentric shaft sleeves and two shaft sleeves; the cutting head is provided with a frame main body and six shaft holes; the main shaft system includes three rollers, three sets of bearing box assemblies, and locking screw assemblies; the four eccentric shaft sleeves can be mounted in the four shaft holes in an axial sliding manner and are used for mounting two of the three rollers; bearing boxes are disposed inside the eccentric shaft sleeves; support arms are disposed on the eccentric shaft sleeves; limiting mechanisms are disposed on the frame main body; each limiting mechanism includes at least two limiting clamping seats and fasteners.

The present invention discloses a cutting device, where the cutting device includes a cutting head, a main shaft system, and at least four eccentric shaft sleeves; the cutting head is provided with a frame main body and at least four shaft holes; the main shaft system includes a set of rollers, a set of bearing box assemblies, and locking screw assemblies; the eccentric shaft sleeves can be mounted in the shaft holes in an axial sliding manner, a bearing box is disposed inside each eccentric shaft sleeve; one support arm is disposed on each eccentric shaft sleeve; limiting mechanisms are disposed on the frame main body, and are combined with the shaft holes; each limiting mechanism includes at least two limiting clamping seats and fasteners; the support arm and the limiting clamping seat can form a limiting fit after the eccentric shaft sleeve is inserted into the corresponding shaft hole.

A tape film lamination apparatus may include a housing, a substrate holder disposed in the housing and positioned to receive a substrate, a film holder disposed on the housing and positioned to support a tape film, and an air removal unit connected to a portion of the housing below the film holder to remove and/or exhaust air from the housing resulting to attach the tape film to the substrate.