A cutting unit includes a spindle, a spindle housing, a support flange on the front of the spindle, a cutting blade detachably supported to the support flange, and a fixing flange for fixing the cutting blade to the support flange. The support flange includes a boss portion adapted to be inserted through a central opening of the cutting blade, a flange portion for supporting one side surface of the cutting blade, and a cylindrical portion for engaging the front of the spindle. The flange portion has a suction hole opening toward the fixing flange, and the cylindrical portion has a communication hole communicating with the suction hole. The communication hole is connected to a vacuum source through a rotary joint fixed to the spindle housing so that communication between the communication hole and the vacuum source is selectively made by an on-off valve.

Provided is a semiconductor package cutting system including a cutting device for partial-cutting at least a portion of a strip including a plurality of semiconductor packages, an inspection device mounted behind the cutting device to supply a first strip to be cut to the cutting device and to receive and inspect a second strip cut by the cutting device, and a storage device mounted behind the inspection device to supply the first strip stored therein, to the inspection device and to receive and store the second strip inspected by the inspection device, wherein the inspection device includes an inspection table for placing the first or second strip thereon and moving the first strip along a first direction.

A holding mechanism of a slicer, a crystal bar conveying structure and a slicer are provided. The holding mechanism of a slicer includes a holding seat and at least two limiting members. The at least two limiting members are movably disposed on the holding seat. An outer surface of the holding seat is provided with an accommodating groove. When the at least two limiting members are in the avoiding state, at least a part of each of the at least two limiting members is accommodated in the accommodating groove, so as to give way to a crystal bar holder in a moving process of the crystal bar holder. When the at least two limiting members are in the limiting state, at least a part of each of the at least two limiting members protrudes out from the outer surface of the holding seat to abut against the crystal bar holder.

Disclosed is a workplate for Y-axis compensation of an ingot and a Y-axis compensation method of the ingot using the same, which is configured to facilitate Y-axis compensation of the ingot in a state in which the ingot is attached to the workplate at a cutting-plane angle so as to be cut using a wire-cutting apparatus. More particularly, the workplate includes a bottom plate, having an upper surface formed to be curved downwards with respect to a longitudinal direction of the ingot attached to the workplate, and a top plate, coupled to the bottom plate such that a lower surface thereof is movable along the upper surface of the bottom plate and configured to enable the ingot to be coupled to an upper portion thereof at an X-axis cutting-plane angle.

The invention discloses a method for cutting a substrate wafer from an indium phosphide crystal, and belongs to the field of semiconductor substrate preparation, comprises the following steps of: 1) orientating, cutting the head and the tail of a crystal bar, adjusting the orientation and trying to cut the crystal bar until a wafer with a required crystal orientation cut, wherein the cutting end face is an orientation end face; 2) multi-wire cutting, on a multi-wire cutting apparatus, dividing a crystal bar parallel to an orientation end face into wafers; 3) cleaning, cleaning the wafer until no residue and no dirt existing on the surface; 4) circle cutting, performing circle cutting on the wafer to cut the desired crystal orientation area. According to the technical scheme, for the indium phosphide crystal bar which is difficult to control in diameter and easy to twinning/poly in the growth process, a barreling process which may grind and remove a large amount of InP materials is abandoned, the crystal bar is multi-wire cut into a wafer, and then the substrate wafer which is available in the crystal direction close to the standard size is cut from the wafer to the maximum extent, so that the wafer output can be greatly increased, and the material loss and the waste can be reduced.

Disclosed are a fully-automatic multi-station cutting machine and a method for cutting a material. The fully-automatic multi-station cutting machine includes a conveying assembly, a cutting assembly, transfer assemblies and a receiving assembly; the cutting assembly is located on one side of a length direction of the conveying assembly; the transfer assemblies and the receiving assembly are located on the other side of the length direction of the conveying assembly; and the transfer assemblies are capable of reciprocating in length and width directions of the conveying assembly. After being conveyed to a specified position by the conveying assembly, a material can be uniformly cut into a plurality of segments by the cutting assembly. After the cutting is ended, a head or tail material is taken out of the conveying assembly and is transferred to the receiving assembly by the transfer assemblies.

A fixing jig includes a body portion, an insertion portion extending from the body portion along a first direction and a cover portion extending from the body portion along the first direction, spaced apart from the insertion portion along a second direction intersecting the first direction. The cover portion includes a first surface and a second surface opposite to the first surface. The second surface of the cover portion faces the insertion portion, and second surface of the cover portion includes a groove.

In a method, substrate elements are provided wherein each substrate element has a first side and a second side meeting at a corner point. The substrate elements are picked and then placed on a support device in alignment. A cutting operation is then performed where each of the substrates elements are cut along a cut line having a common first direction which intersects the first and second sides of each of the substrate elements in order to create a third side on each substrate element. The third side of each of the substrate elements meets the first and the second sides at corresponding corner points.

A tape is stuck to the front surface of a workpiece in such a manner that the direction in which the stretch rate becomes the lowest when a predetermined force is applied to the tape is non-parallel to each of multiple planned dividing lines extending in a lattice manner. In this case, each of the multiple planned dividing lines does not extend along the direction perpendicular to this direction. This can reduce the ratio of the region to which the tape does not stick in the front surface of the workpiece in the vicinity of the boundary between each of the multiple planned dividing lines and a region in which a device is formed and suppress deterioration of the processing quality when the workpiece is divided from the back surface side by a cutting blade.

A black wheel for transporting an ultra-thin silicon wafer may include grooves provided on a side surface of the black wheel along a circumferential direction of the black wheel. Compressed air lines are respectively accommodated within the grooves, and an air outlet of each of the compressed air lines is provided to align with a side of the ultra-thin silicon wafer close to a next process device.