Some implementations described herein provide a dual-feedback control system for laser beam targeting in a lithography system such as an EUV lithography system. In addition to using feedback from a high-frequency quad-cell sensor to adjust a target position of the pre-pulse laser beam based on a first portion of a phase of a wavefront of the pre-pulse laser beam, the dual-feedback control system uses feedback from a low-frequency camera sensor to adjust the target position of the pre-pulse laser beam based on a second portion of the phase of the wavefront.

An extreme ultraviolet light generation system, generating plasma by irradiating a target with pulse laser light and generate extreme ultraviolet light, includes a chamber, a target supply unit supplying the target into the chamber, a target passage detection device detecting the target passing through a predetermined region, a laser device radiating the pulse laser light toward the target having passed through the predetermined region, and a processor. The target passage detection device includes a light source irradiating the predetermined region with light, and a sensor receiving the light and outputting a signal corresponding to a received light amount of the light. The processor acquires, from the signal, a passage timing at which the target is detected and a time width during which the target is detected, and determines irradiation timing of the laser device for irradiating with the pulse laser light based on the passage timing and the time width.