A system and method for forming electrical devices via additive manufacturing processes that utilize starting materials that are in a solid state at least prior to, as well as after, the formation of the electrical device. A first solid starting material can be configured to form one or more insulator layers of the electrical device, while another solid starting material can be applied to form one or more electrically conductive layers. The starting materials canbe applied layer-by-layer during formation of the electrical device such that the electrically conductive layers can become automatically embedded within the insulating layers, and vice versa. The additive manufacturing process(es) utilized to form the electrically conductive layers from solid starting materials can be different than the additive manufacturing process(es) utilized to form the insulator layers.

A method of designing and forming a piezoelectric ceramic crystal integrating an impedance matching region and a backing region. The method includes receiving one or more required operating parameters of the piezoelectric ceramic crystal for an application, iteratively modeling and simulating performance of one or more materials, structures, and gradients to utilize within the piezoelectric ceramic crystal, identifying at least one material, structure, or gradient that exhibits predicted performance that at least substantially achieves the one or more required operating parameters of the piezoelectric ceramic crystal, outputting a design of the piezoelectric ceramic crystal, and forming the piezoelectric ceramic crystal via one or more additive manufacturing processes.

A method of manufacturing a semiconductor device includes providing, in a housing, an insulating substrate having a metal pattern, a semiconductor chip, a sinter material applied on the semiconductor chip, and a terminal, providing multiple granular sealing resins supported by a grid provided in the housing, heating an inside of the housing until a temperature thereof reaches a first temperature higher than a room temperature and thereby discharging a vaporized solvent of the sinter material out of the housing via a gap of the grid and a gap of the sealing resins, and heating the inside of the housing until the temperature thereof reaches a second temperature higher than the first temperature and thereby causing the melted sealing resins to pass the gap of the grid and form a resin layer covering the semiconductor chip.

A method of producing a sealed structure, the method including: preparing a substrate and a curable resin composition in a liquid form; and sealing the substrate with the curable resin composition, to form a sealed body including the substrate and a cured product of the curable resin composition. The sealing step includes: printing the curable resin composition onto the substrate, to cover the substrate with a first coating film of the curable resin composition; and compression-molding the first coating film and the substrate together using a mold, with a pressing surface of the mold abut against the first coating film, to convert the first coating film into a second coating film. A ratio of a projected area S1 of the first coating film onto the substrate to a projected area S2 of the second coating film onto the substrate: S1/S2 is 0.9 or more.

A system of additive manufacturing of an electronic component is provided. The system includes a deposition control computing device, the deposition control computing device including at least one processor in communication with at least one memory device. The at least one processor is programmed to generate control instructions of additive manufacturing of the electronic component, interpret the control instructions into controls of the system, and output the controls.

A system of additive manufacturing of a high-voltage electronic component is provided. The system includes a dispenser and a height control assembly. The dispenser has a tip configured to deposit an additive material onto a surface of a substrate. The height control assembly is coupled to the dispenser and configured to detect a distance change of the tip of the dispenser from the surface of the substrate, wherein the height control assembly is further configured to adjust the dispenser based on the detected distance change.

Object: Provided is a decorative vapor deposition sheet that can reduce or prevent a defect, such as the breaking of a metal vapor deposition layer or the entire sheet, even when applied to a forming method requiring high temperature or the like. The decorative vapor deposition sheet of an embodiment of the present disclosure is a decorative vapor deposition sheet including a cover resin layer and a metal vapor deposition layer, in which the cover resin layer has a thickness of approximately 50 micrometers or greater, the metal vapor deposition layer exhibits a granular structure, a breaking elongation of the decorative vapor deposition sheet at 20° C. is approximately 120% or greater, and a breaking elongation of the decorative vapor deposition sheet at 160° C. is approximately 350% or greater.

The present invention relates to a method for manufacturing an electronic or electrical system, the method comprising the layer-free production of at least one physical structure (101, 102) which is designed to guide electromagnetic waves, using at least one additively operating apparatus, wherein the layer-free production of the spatial, layer-free structure comprises the simultaneous or sequential application and/or removal of one or more materials in the spatial arrangement, as a result of which the electronic or electrical system is partially or completely formed. The invention further relates to a system which is manufactured in accordance with the method.

A semiconductor package including a circuit substrate, an interposer structure, a plurality of dies, and an insulating encapsulant is provided. The interposer structure is disposed on the circuit substrate. The plurality of dies is disposed on the interposer structure, wherein the plurality of dies is electrically connected to the circuit substrate through the interposer structure. The insulating encapsulant is disposed on the circuit substrate, wherein the insulating encapsulant surrounds the plurality of dies and the interposer structure and encapsulates at least the interposer structure, the insulating encapsulant has a groove that surrounds the interposer structure and the plurality of dies, and the interposer structure and the plurality of dies are confined to be located within the groove.

A method for manufacturing an insert-molded bus bar includes the steps of: preparing a first bus bar having a through hole and a second bus bar having a protrusion corresponding to the through hole; preparing a mold having therein a swaging member capable of swaging the protrusion; placing the first and second bus bars in the mold with the protrusion being inserted into the through hole; swaging the first and second bus bars using the swaging member of the mold to obtain connected bus bars that are the bus bars connected to each other; and injecting a molding material around the connected bus bars that are the bus bars connected to each other by swaging to perform insert molding using the mold and obtain the insert-molded bus bar.