There is provided a metal-coated Al bonding wire which can provide a sufficient bonding reliability of bonded parts of the bonding wire under a high temperature state where a semiconductor device using the metal-coated Al bonding wire is operated. The bonding wire includes a core wire of Al or Al alloy, and a coating layer of Ag, Au or an alloy containing them formed on the outer periphery of the core wire, and the bonding wire is characterized in that when measuring crystal orientations on a cross-section of the core wire in a direction perpendicular to a wire axis of the bonding wire, a crystal orientation <111> angled at 15 degrees or less to a wire longitudinal direction has a proportion of 30 to 90% among crystal orientations in the wire longitudinal direction. Preferably, the surface roughness of the wire is 2 μm or less in terms of Rz.

A method for manufacturing a balance spring intended to equip a balance of a horological movement, including a step of producing a blank made of a Nb—Zr alloy including between 10 and 30 wt % Zr, a step of annealing and cooling the blank, at least one step of deforming the annealed blank in order to form a wire, wherein, before the deformation step, a step of depositing, on the blank, a layer of a ductile material chosen from copper, nickel, cupronickel, cupro-manganese, gold, silver, nickel-phosphorus Ni—P and nickel-boron Ni—B, in order to facilitate the wire shaping operation, the thickness of the ductile material layer deposited being chosen such that the ratio of the area of ductile material to the area of the alloy for a given wire cross-section is less than 1, preferably less than 0.5, and more preferably lies in the range 0.01 to 0.4.

To improve adhesion between a plating film reducing contact electrical resistance and a copper alloy plate containing Mg. A copper alloy plate containing Mg of more than 1.2% by mass and 2% by mass or less and the balance Cu and inevitable impurities in a center portion in a plate thickness direction, in the copper alloy plate, a surface Mg concentration at a surface is 30% or less of a center Mg concentration at the center portion in the plate thickness direction, a surface layer portion having a depth from the surface to where a Mg concentration is 90% of the center Mg concentration is provided, and in the surface layer portion, the Mg concentration increases from the surface toward the center portion of the plate thickness direction with a concentration gradient of 0.2% by mass/μm or more and 50% by mass/μm or less.

This copper alloy for electronic or electric devices contains 100 mass ppm or greater and 400 mass ppm or less of Mg, 5 mass ppm or greater and 20 mass ppm or less of Ag, and less than 5 mass ppm of P with a balance being Cu and inevitable impurities, in which when a ratio of J3, in which all three grain boundaries constituting a grain boundary triple junction are special grain boundaries, to all grain boundary triple junctions is defined as NF.sub.J3 and a ratio of J2, in which two grain boundaries constituting a grain boundary triple junction are special grain boundaries and one grain boundary constituting the grain boundary triple junction is a random grain boundary, to all grain boundary triple junctions is defined as NF.sub.J2, an expression of 0.22<(NF.sub.J2/(1−NF.sub.J3)).sup.0.5≤0.45 is satisfied.

Metal nanowires with uniform noble metal coatings are described. Two methods, galvanic exchange and direct deposition, are disclosed for the successful formation of the uniform noble metal coatings. Both the galvanic exchange reaction and the direct deposition method benefit from the inclusion of appropriately strong binding ligands to control or mediate the coating process to provide for the formation of a uniform coating. The noble metal coated nanowires are effective for the production of stable transparent conductive films, which may comprise a fused metal nanostructured network.

There is provided a novel Cu bonding wire that achieves a favorable FAB shape and achieve a favorable bond reliability of the 2nd bonding part even in a rigorous high-temperature environment. The bonding wire for semiconductor devices includes a core material of Cu or Cu alloy, and a coating layer having a total concentration of Pd and Ni of 90 atomic% or more formed on a surface of the core material. The bonding wire is characterized in that: in a concentration profile in a depth direction of the wire obtained by performing measurement using Auger electron spectroscopy (AES) so that the number of measurement points in the depth direction is 50 or more for the coating layer, a thickness of the coating layer is 10 nm or more and 130 nm or less, an average value X is 0.2 or more and 35.0 or less where X is defined as an average value of a ratio of a Pd concentration C.sub.Pd (atomic%) to an Ni concentration C.sub.Ni (atomic%), C.sub.Pd/C.sub.Ni, for all measurement points in the coating layer, the total number of measurement points in the coating layer whose absolute deviation from the average value X is 0.3X or less is 50% or more relative to the total number of measurement points in the coating layer, and the bonding wire satisfies at least one of following conditions (i) and (ii): (i) a concentration of In relative to the entire wire is 1 ppm by mass or more and 100 ppm by mass or less; and (ii) a concentration of Ag relative to the entire wire is 1 ppm by mass or more and 500 ppm by mass or less.

A coated substrate includes a substrate, a zirconium-containing layer disposed over the substrate, and one or more copper alloy layers disposed over the substrate. Variations include coated substrate with a single copper alloy layer, alternating copper layers, or a combined copper alloy/zirconium-containing layer.

A laminated member as a laminate of a plurality of alloy ribbons is used. The laminated member has a side surface with a fracture surface. A laminated body as a laminate of the laminated member is used. A motor that includes a core using the laminated body is used. A method for manufacturing a laminated member is used that includes: fixing a plurality of amorphous ribbons to one another in a part of layers of the amorphous ribbons after laminating the amorphous ribbons; and punching a laminated member by cutting the laminate of the amorphous ribbons at a location that excludes the portion fixing the amorphous ribbons in the laminate.

A welded assembly includes a first object or substrate, an interlayer, and a subsequent layer deposited on the interlayer. The interlayer is an ESD coating deposited on the first object, and the subsequent layer is deposited by ESD on the interlayer. The subsequent layer is made of a different materials from the substrate. Both the interlayer and the subsequent layer are subject to peening. In one case the interlayer has a lower either a lower thermal conductivity or a lower electrical conductivity than the substrate and the subsequent layer. In another example, the subsequent layer has a cermet content of greater than 40% by wt.

An article and a method of making the article is disclosed where the article includes a sequence of metal layers arranged to inhibit adhesion failure between the metal layers. The metal layers include a topcoat of silver, an intermediate layer of silver, a silver-tin alloy layer and a nickel layer. The layers adhere to a substrate containing copper or copper alloy.