A bonding structure formed on a substrate includes an indium layer and a passivating nickel plating formed on the indium layer. The nickel plating serves to prevent a reaction involving the indium layer.

A metallic material that includes a foundation material; and a surface layer formed on a surface of the foundation material and exposed on an outermost surface, wherein the surface layer contains a precious metal element made of at least one kind selected from the group consisting of Ag, Au, and a platinum group element, and In, and a connection terminal being made of the metallic material, wherein the surface layer is formed on a surface of the foundation material, at least in a contact portion electrically contacting an opposite electrically conductive member.

An electrical contact material (10) having: a conductive substrate (1) formed from copper or a copper alloy; a first intermediate layer (2) provided on the conductive substrate (1); a second intermediate layer (3) provided on the first intermediate layer (2); and an outermost layer (4) formed from tin or a tin alloy and provided on the second intermediate layer (3), wherein the first intermediate layer (2) is constructed as one layer of grains extending from the conductive substrate (1) side to the second intermediate layer (3) side, and wherein, in the first intermediate layer (2), the density of grain boundaries (5b) extending in a direction in which the angle formed by the grain boundary in interest and the interface between the conductive substrate and the first intermediate layer is 45° or greater, is 4 μm/μm.sup.2 or less; a method of producing the same; and a terminal.

The present invention relates, generally, to a component containing a composite of at least two layers that are connected to each other, in which the first layer comprises a hole and the second layer has a thickness in the range of 1 to 50 μm. The first and second layers each contain at least one metal and compositions of the first and second layers are different. Further objects of the present invention include a method for producing a component containing at least two layers that are connected to each other and have the aforementioned features, a method for producing a component containing at least three layers that are connected to each other and have the aforementioned features, as well as a component that is obtained by one of the aforementioned methods and a device containing at least one of the aforementioned components for use in a living body.

A method of manufacturing a two-layer metal wire, in particular in a gold-based alloy and of silver, which comprises a succession of steps which consist in coupling an outer metal tube (2) to an inner metal tube (4) interposing a first binding thickness (3) in low-melting metal material, welding the inner surface (12) of the outer metal tube (2) to the outer surface (13) of the first binding thickness (3) and the inner surface (13″) of the same first binding thickness (3) to the outer surface (141) of the inner metal tube (4), to firmly associate the outer tube (2) with the inner tube (4) together, so as to form a tubular element (7, 107) which has at least three metal layers, and then draw, by final drawing, the tubular element (7, 107) to obtain a compound metal wire (9) from at least three metal layers. The object of the present invention is also a semi-finished tubular element (7, 107), having at least three metal layers, which comprises an outer metal tube (2), an Inner metal tube (4) and a first binding thickness (3) interposed between the outer metal tube (2) and the inner metal tube (4).

An extremely thin copper foil is provided that enables formation of highly fine different wiring patterns with a line/space (L/S) of 10 μm or less/10 μm or less on two sides of the copper foil and is thus usable as an inexpensive and readily processable substitution for silicon and glass interposers. The extremely thin copper foil includes, in sequence, a first extremely thin copper layer, an etching stopper layer, and the second extremely thin copper layer. Two sides of the extremely thin copper foil each have an arithmetic average roughness Ra of 20 nm or less.

In various embodiments, electronic devices such as touch-panel displays incorporate interconnects featuring a conductor layer and, disposed above the conductor layer, a capping layer comprising an alloy of Cu and one or more refractory metal elements selected from the group consisting of Ta, Nb, Mo, W, Zr, Hf, Re, Os, Ru, Rh, Ti, V, Cr, and Ni.

A device including a near field transducer, the near field transducer including gold (Au), silver (Ag), copper (Cu), or aluminum (Al), and at least two other secondary atoms, the at least two other secondary atoms selected from: boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), manganese (Mn), tellurium (Te), holmium (Ho), lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), barium (Ba), chlorine (Cl), cesium (Cs), dysprosium (Dy), europium (Eu), fluorine (F), germanium (Ge), hydrogen (H), iodine (I), rubidium (Rb), selenium (Se), terbium (Tb), nitrogen (N), oxygen (O), carbon (C), antimony (Sb), gadolinium (Gd), samarium (Sm), thallium (Tl), cadmium (Cd), neodymium (Nd), phosphorus (P), lead (Pb), hafnium (Hf), niobium (Nb), erbium (Er), zinc (Zn), magnesium (Mg), palladium (Pd), vanadium (V), zinc (Zn), chromium (Cr), iron (Fe), lithium (Li), nickel (Ni), platinum (Pt), sodium (Na), strontium (Sr), calcium (Ca), yttrium (Y), thorium (Th), beryllium (Be), thulium (Tm), erbium (Er), ytterbium (Yb), promethium (Pm), neodymium (Nd cobalt (Co), cerium (Ce), lanthanum (La), praseodymium (Pr), or combinations thereof.

At least one wafer is embedded in a carrier to eliminate or at least reduce edge effect. The wafer reconfiguration is designed to improve a quality not only for spin coating process but also for electric plating process. An edge bead is formed on top of the carrier instead of being formed on top of the wafer so that a full top surface of the wafer can be active to the fabrication of chips and therefore more chips are yielded for a single wafer. The backside of the wafer is not contaminated by the coating according to the present invention. Further, dummy circuits can be made on top of the carrier so that electric plating uniformity for full area of a wafer can be improved.

There is provided a bonding wire that improves bonding reliability of a ball bonded part and ball formability and is suitable for on-vehicle devices. The bonding wire for a semiconductor includes a Cu alloy core material, and a Pd coating layer formed on a surface of the Cu alloy core material, and is characterized in that the Cu alloy core material contains Ni, a concentration of Ni is 0.1 to 1.2 wt. % relative to the entire wire, and a thickness of the Pd coating layer is 0.015 to 0.150 m.