A curved image sensor chip has a first side and a second side opposite the first side. The second side includes light sensors configured to generate electrical signals in response to receiving light. A substrate is in contact with the first side of the curved image sensor chip and is configured to increase in volume so as to apply a bending force to form the curved image sensor chip.

A chip package includes a chip, an insulating layer and a conductive layer. The chip includes a substrate, an epitaxy layer, a device region and a conductive pad. The epitaxy layer is disposed on the substrate, and the device region and the conductive pad are disposed on the epitaxy layer. The conductive pad is at a side of the device region and connected to the device region. The conductive pad protrudes out of a side surface of the epitaxy layer. The insulating layer is disposed below the substrate and extended to cover the side surface of the epitaxy layer. The conductive layer is disposed below the insulating layer and extended to contact the conductive pad. The conductive layer and the side surface of the epitaxy layer are separated by a first distance.

A complementary metal-oxide-semiconductor (CMOS) image sensor having a passivation layer is provided. The CMOS image sensor includes a sensing device substrate. Isolation structures are positioned within trenches of the sensing device substrate. The isolation structures are arranged along opposing sides of a plurality of image sensing devices. The CMOS image sensor also includes a passivation layer. The passivation layer includes passivation sidewalls arranged along the sidewalls of the isolation structures. A metallic grid overlies the passivation layer. The metallic grid includes a metal framework surrounding openings overlying the plurality of image sensing devices. The passivation layer further includes passivation section underlying the openings.

A system and method for reducing cross-talk between photosensitive diodes is provided. In an embodiment a first color filter is formed over a first photosensitive diode and a second color filter is formed over a second photosensitive diode, and a gap is formed between the first color filter and the second color filter. The gap will serve to reflect light that otherwise would have crossed from the first color filter to the second color filter, thereby reducing cross-talk between the first photosensitive diode and the second photosensitive diode. A reflective grid may also be formed between the first photosensitive diode and the second photosensitive diode in order to assist in the reflection and further reduce the amount of cross-talk.

An apparatus is described that includes a first semiconductor chip having a first pixel array. The first pixel array has visible light sensitive pixels. The apparatus includes a second semiconductor chip having a second pixel array. The first semiconductor chip is stacked on the second semiconductor chip such that the second pixel array resides beneath the first pixel array. The second pixel array has IR light sensitive pixels for time-of-flight based depth detection.

An apparatus is described that includes a first semiconductor chip having a first pixel array. The first pixel array has visible light sensitive pixels. The apparatus includes a second semiconductor chip having a second pixel array. The first semiconductor chip is stacked on the second semiconductor chip such that the second pixel array resides beneath the first pixel array. The second pixel array has IR light sensitive pixels for time-of-flight based depth detection.

An imaging pixel may have a fully depleted charge transfer path between a pinned photodiode and a floating diffusion region. A pinned transfer diode may be coupled between the pinned photodiode and the floating diffusion region. The imaging pixel may be formed in upper and lower substrates with an interconnect layer coupling the upper substrate to the lower substrate. The imaging pixel may include one or more storage diodes coupled between the transfer diode and the floating diffusion region. The imaging pixel may be used to capture high dynamic range images with flicker mitigation, images synchronized with light sources, or for high frame rate operation.

A solid-state imaging apparatus includes: a solid-state imaging device photoelectrically converting light taken by a lens; and a light shielding member shielding part of light incident on the solid-state imaging device from the lens, wherein an angle made between an edge surface of the light shielding member and an optical axis direction of the lens is larger than an incident angle of light to be incident on an edge portion of the light shielding member.

An image sensor includes a plurality of photoelectric detectors, a plurality of color filters, and at least one pixel isolation region between adjacent ones of the photoelectric detectors. The color filters include a white color filter, and the color filters correspond to respective ones of the photoelectric detectors. The at least one pixel isolation region serves to physically and at least partially optically separate the photoelectric detectors from one another.

An image sensor includes a sensing layer, filter units, and a grid structure. The filter units are disposed on the sensing layer. The grid structure is disposed on the filter units, and includes grating portions. The grating portions form a number of grating groups, and each of the grating groups is separated from each other.