A technique relates to a qubit readout system. A cavity-qubit system has a qubit and a readout resonator and outputs a readout signal. A lossless superconducting circulator is configured to receive the microwave readout signal from the cavity-qubit system and transmit the microwave readout signal according to a rotation. A quantum limited directional amplifier amplifies the readout signal. A directional coupler is connected to and biases the amplifier to set a working point. A microwave bandpass filter transmits in a microwave frequency band by passing the readout signal while blocking electromagnetic radiation outside of the microwave frequency band. A low-loss infrared filter has a distributed Bragg reflector integrated into a transmission line. The low-loss filter is configured to block infrared electromagnetic radiation while passing the microwave readout signal. The low-loss infrared filter is connected to the microwave bandpass filter to receive input of the microwave readout signal.

A solid state imaging device including a semiconductor layer comprising a plurality of photodiodes, a first antireflection film located over a first surface of the semiconductor layer, a second antireflection film located over the first antireflection film, a light shielding layer having side surfaces which are adjacent to at least one of first and the second antireflection film.

A semiconductor device includes a carrier substrate, a first color filter, a first photodetector, and a light enhancement structure. The first photodetector is disposed between the carrier substrate and the first color filter. The light enhancement structure is disposed between the first color filter and the carrier substrate and adjacent to the first photodetector for enhancing intensity of light incident the first photodetector.

A compound-eye imaging device is a compound-eye imaging device having a plurality of facet optical systems, an imaging element, and a signal processing unit. The plurality of facet optical systems of the compound-eye imaging device are disposed to face a subject in a two dimensional shape. Also, the imaging element of the compound-eye imaging device includes, in units of facets, a plurality of pixels which receive light concentrated by facet optical systems and generate image signals. Also, the signal processing unit of the compound-eye imaging device generates an image corresponding to the subject based on image signals generated by the imaging element of the compound-eye imaging device.

A visible and infrared image sensor, including: a first active layer for detecting visible radiation, in which a plurality of visible detection pixels are defined; and superimposed on the first active layer, a second active layer for detecting infrared radiation, in which a plurality of infrared detection pixels are defined, wherein the second active layer defines a vertical resonant cavity for said infrared radiation, the sensor further including, on the side of the face of the second active layer opposite the first active layer, a control integrated circuit superimposed on the first and second active layers.

An image sensor includes a sensing layer, filter units, and a grid structure. The filter units are disposed on the sensing layer. The grid structure is disposed on the filter units, and includes grating portions. The grating portions form a number of grating groups, and each of the grating groups is separated from each other.

A method of manufacturing a detector capable of detecting a wavelength range [.sub.8; .sub.14] centered on a wavelength .sub.10, including: forming said device on a substrate by depositing a sacrificial layer totally embedding said device; forming, on the sacrificial layer, a cap including first, second, and third optical structures transparent in said range [.sub.8; .sub.14], the second and third optical structures having equivalent refraction indexes at wavelength .sub.10 respectively greater than or equal to 3.4 and smaller than or equal to 2.3; forming a vent of access to the sacrificial layer through a portion of the cap, and then applying, through the vent, an etching to totally remove the sacrificial layer.

An image sensor and an operating method thereof are disclosed. The image sensor includes a first photoelectric conversion portion configured to receive plural lights, except for a light of first wavelength, to generate an electric charge; and a second photoelectric conversion portion configured to receive the light of the first wavelength to generate an electric charge, wherein at least a portion of the first photoelectric conversion portion and the second photoelectric conversion portion is spaced apart from each other in a vertical direction.

An image sensor includes a light receiving element, an anti-reflection layer, a high refractive pattern, a color filter, and a micro lens. The light receiving element is formed on a semiconductor substrate to generate charges responsive to incident light. The anti-reflection layer is formed on the semiconductor substrate. The high refractive pattern is formed on the anti-reflection layer in correspondence with the light receiving element. The color filter is formed on the anti-reflection layer while covering a top surface and lateral sides of the high refractive pattern. The micro lens is formed on the color filter, The image sensor provides an image having high quality.

A front-side image sensor may include a substrate in a semiconductor material and an active layer in the semiconductor material. The front side image sensor may also include an array of photodiodes formed in the active layer and an insulating layer between the substrate and the active layer.