Provided is an image sensor circuit, including a pixel array and a plurality of different control circuits. The pixel array comprises a plurality of pixel circuit groups arranged in an array. Each pixel circuit group comprises a plurality of pixel circuits that generate corresponding sensitivity values over exposure duration. The pixel circuits include a first quantity of first pixel circuits, and a second quantity of second pixel circuits. The plurality of different control circuits are respectively coupled to different pixel circuits to control the exposure duration thereof with different transmission signals. The different control circuits are also set to control different pixel circuits to output photo-sensed values at different frame rates. The image sensor circuit periodically generates the pixel value of each pixel circuit group according to first and second exposure durations, first and second frame rates, and first and second light sensitivity values of each pixel circuit group.

An apparatus includes a plurality of pixels arranged in a substrate including a first surface provided with a transistor and a second surface opposed to the first surface, and a light shielding portion. The plurality of pixels includes first pixels shielded from light, and second pixels. Each of the plurality of pixels includes a first area of a first conductive type. Each of the first pixels includes a second area. Each of the second pixels includes a third area between the second surface and the first area, and includes a fourth area of a second conductive type between the first area and the first surface. In a cross-section along a first line, an impurity concentration of the first conductive type in the second area is higher than an impurity concentration of the first conductive type in the third area.

A method of manufacturing a transistor structure includes forming a plurality of trenches in a substrate, lining the plurality of trenches with a dielectric material, forming first and second substrate regions at opposite sides of the plurality of trenches, and filling the plurality of trenches with a conductive material. The plurality of trenches includes first and second trenches aligned between the first and second substrate regions, and filling the plurality of trenches with the conductive material includes the conductive material extending continuously between the first and second trenches.

An image sensor includes a substrate, a plurality of photodiodes in the substrate, a pixel separating pattern in the substrate separating the plurality of photodiodes, a first active pattern in the substrate at least partially overlapping a first photodiode and a second photodiode from among the plurality of photodiodes, a selection gate on the first active pattern at least partially overlapping the first photodiode, and a source follower gate on the first active pattern at least partially overlapping the second photodiode. The first photodiode is adjacent to the second photodiode. The pixel separating pattern includes a first pixel separating pattern and a second pixel separating pattern disposed between the first photodiode and the second photodiode. The first pixel separating pattern is spaced from the second pixel separating pattern. The first active pattern includes a first extrinsic region disposed between the first pixel separating pattern and the second pixel separating pattern.

There is provided a photodetection device capable of widening a dynamic range without increasing the number of photoelectric converters. The photodetection device according to an embodiment of the present disclosure includes a plurality of photoelectric converters arranged in one of pixels and configured to photoelectrically convert incident light. The plurality of photoelectric converters includes at least one first photoelectric converter and at least one second photoelectric converter having a lower sensitivity to the incident light than the first photoelectric converter.

Methods, systems, and apparatus, including computer programs encoded on a computer storage medium, for eye gesture recognition. In one aspect, a method includes obtaining an electrical signal that represents a measurement, by a photodetector, of an optical signal reflected from an eye and determining a depth map of the eye based on phase differences between the electrical signal generated by the photodetector and a reference signal. Further, the method includes determining gaze information that represents a gaze of the eye based on the depth map and providing output data representing the gaze information.

An image sensor in which a length of a pixel portion in a first direction is longer than a length of the pixel portion in a second direction orthogonal to the first direction. The pixel portion includes: a plurality of microlenses arranged in a matrix in the first direction and the second direction, and a plurality of photoelectric conversion portions provided for each microlens of at least some of the plurality of microlenses and configured to perform photoelectric conversion on light that has entered the photoelectric conversion portions via the each microlens. The plurality of photoelectric conversion portions are arranged in at least one of the first and second directions, and an electric charge crosstalk rate between a plurality of photoelectric conversion portions arranged in the first direction is higher than that between a plurality of photoelectric conversion portions arranged in the second direction.

Provided is an imaging device operated at high speed and low power consumption. The imaging device includes a pixel and a first circuit. The pixel includes a first photoelectric conversion element and a second photoelectric conversion element. The first circuit is configured to compare a first signal which is output from the pixel on the basis of imaging data obtained by the first photosensitive conversion element to a second signal which is output from the pixel on the basis of imaging data obtained by the second photosensitive conversion element for determining whether there is a difference between the first signal and the second signal. Thus, edge detection can be performed without a periphery device for edge detection outside the imaging device.

The present disclosure relates to a solid-state imaging device, an electronic apparatus, and a manufacturing method that are designed to further increase conversion efficiency.

A solid-state imaging device includes a pixel in which element separation is realized by a first trench element separation region having a trench structure in a region between an FD unit and an amplifying transistor among element separation elements separating the elements constituting the pixel from one another, and a second trench element separation region having a trench structure in a region other than the region between the FD unit and the amplifying transistor among the element separation regions separating the elements constituting the pixel from one another, and the first trench element separation region is deeper than the second trench element separation region. The present technology can be applied to CMOS image sensors, for example.

An imaging pixel may be provided with a photodiode and a floating diffusion region. The pixel may include multiple charge storage regions interposed between the photodiode and the floating diffusion region. A first charge storage region may be used to store charge from the photodiode for global shutter functionality. A second charge storage region may not be coupled to the photodiode. The second charge storage region may be used to determine how much charge is generated in the charge storage region from incident light on the charge storage region. The second charge storage region may help account for incident light noise in the first charge storage region. The second charge storage region may be the same size as the first charge storage region, or may be smaller than the first charge storage region.