Provided is a solid-state image pickup apparatus including a crosstalk suppression mechanism included in each pixel arranged in a pixel array, the crosstalk suppression mechanism of a part of the pixels differing from that of other pixels in an effective area of the pixel array.

A method for manufacturing a back-side illumination (BSI) complementary metal-oxide-semiconductor (CMOS) image sensor with a vertical transfer gate structure for improved quantum efficiency (QE) and global shutter efficiency (GSE) is provided. A sacrificial dielectric layer is formed over a semiconductor region. A first etch is performed into the sacrificial dielectric layer to form an opening exposing a photodetector in the semiconductor region. A semiconductor column is formed in the opening. A floating diffusion region (FDR) is formed over the semiconductor column and the sacrificial dielectric layer. A second etch is performed into the sacrificial dielectric layer to remove the sacrificial dielectric layer, and to form a lateral recess between the FDR and the photodetector. A gate is formed filling the lateral recess and laterally spaced from the semiconductor column by a gate dielectric layer. The BSI CMOS image sensor resulting from the method is also provided.

A hybrid analog-digital pixel circuit is fabricated on two wafers. A first wafer includes the analog pixel circuitry and a second wafer includes the digital control and processing circuitry. Externally accessible contact structures for electrically interconnecting the two wafers are arranged in groups. Each group includes externally accessible contact structures for carrying signals associated solely with operation of a corresponding pixel.

In an image sensor, if a pixel for focusing has a structure having a light-shielding layer for performing pupil division, between the micro lens and the photoelectric conversion unit, the pixel may be configured such that the focal position of the micro lens is positioned further on the micro lens side than the light-shielding layer, and the distance from the focal position of the micro lens to the light-shielding layer is greater than 0 and less than nF, where n is the refractive index at the focal position of the micro lens, F is the aperture value of the micro lens, and is the diffraction limit of the micro lens. This enables variation in the pupil intensity distribution of the pixel for focusing due to positional production tolerance of components to be suppressed.

An image acquisition device includes an array of color filters and an array of microlenses over the array of color filters. At least one layer made from an inorganic dielectric material is formed between the array of color filters and the array of microlenses.

A pixel sensor may include a layer stack to reduce and/or block the effects of plasma and etching on a photodiode and/or other lower-level layers. The layer stack may include a first oxide layer, a layer having a band gap that is approximately less than 8.8 electron-Volts (eV), and a second oxide layer. The layer stack may reduce and/or prevent the penetration and absorption of ultraviolet photons resulting from the plasma and etching processes, which may otherwise cause the formation of electron-hole pairs in the substrate in which the photodiode is included.

An image sensor device includes a semiconductor substrate, a radiation sensing member, a shallow trench isolation, and a color filter layer. The radiation sensing member is in the semiconductor substrate. An interface between the radiation sensing member and the semiconductor substrate includes a direct band gap material. The shallow trench isolation is in the semiconductor substrate and surrounds the radiation sensing member. The color filter layer covers the radiation sensing member.

An image sensor includes a pixel array including a plurality of normal pixels, a plurality of phase detection groups, and a color filter array. Each phase detection group includes a first phase detection pixel and a second phase detection pixel disposed adjacent to the first phase detection pixel. The color filter array includes a plurality of unit groups. Each unit group includes a plurality of color filters of a same color arranged in an MN matrix on the pixel array, wherein M and N are natural numbers. A first color filter among the color filters of a first color is disposed on the first phase detection pixel of one of the unit groups and a second color filter among the color filters of a second color different from the first color is disposed on the second phase detection pixel of another one of the unit groups.

A texture recognition device and a display apparatus are provided, the texture recognition device has a plurality of pixel units, and includes a base substrate, a driving circuit layer, a first electrode layer and a photosensitive element layer; at least one of the plurality of pixel units includes a pixel driving circuit in the driving circuit layer, a first electrode in the first electrode layer, and a plurality of photosensitive elements spaced apart from each other in the photosensitive element layer, the pixel driving circuit is electrically connected with the first electrode, the plurality of photosensitive elements are on a side of the first electrode away from the base substrate, and are electrically connected to the pixel driving circuit through the first electrode.

An electronic device includes: an imaging unit including a region having a pixel group that has a plurality of first pixels, and second pixels that are fewer than the first pixels in the pixel group; and a control unit that reads out the signals based upon exposure of the second pixels during exposure of the plurality of first pixels.