Some embodiments relate to an integrated circuit light sensor device. The integrated circuit light sensor device includes a semiconductor substrate, as well as a plurality of first light-absorption regions and a plurality of second light-absorption regions located in the semiconductor substrate. Each of the first light-absorption regions includes an implantation region of the semiconductor substrate. The implantation region and the semiconductor substrate form at least a portion of a corresponding one of a plurality of first photodetectors for a first light wavelength band. Each of the second light-absorption regions includes a semiconductor material different from the semiconductor substrate. The semiconductor material forms at least a portion of a corresponding one of a plurality of second photodetectors for a second light wavelength band different from the first light wavelength band.

An image sensor that includes a substrate including a first photodiode (PD) region and a second PD region adjacent to the first PD region; a first PD having a first area in the first PD region; a second PD in the second PD region, the second PD having a second area smaller than the first area; a micro-lens on the substrate and covering the first PD region; and a light splitter between the substrate and the micro-lens, the light splitter including a material having a refractive index different from a refractive index of the micro-lens. The light splitter extends from the first PD region to the second PD region.

An image sensor may include pixel groups arranged in a Bayer pattern and a color separating lens array that separates incident light by wavelengths and concentrates the separated incident light on the pixels. The color separating lens array may include pixel corresponding groups, with each group having regions containing nanoposts in two layers. In each of the pixel corresponding groups in each of the two layers, there are a central group and a plurality of peripheral groups. The displacements of arrangement centers of the nanoposts in at least two of the peripheral groups have variations.

A detection device includes a substrate, a photodiode provided on the substrate, a lens provided so as to overlap the photodiode, a light-blocking layer that is provided between the photodiode and the lens, and is provided with an opening in a region overlapping the photodiode, and a light-transmitting resin layer and a buffer layer that are stacked between the light-blocking layer and the lens. The lens is provided in direct contact with a top of the buffer layer.

According to an embodiment, an electronic device may comprise: at least one lens, an image sensor aligned along an optical axis from the at least one lens, and an optical member comprising a prism and/or mirror disposed between the at least one lens and the image sensor on the optical axis. The optical member may include a first optical member including a first surface on which light passing through the at least one lens is configured to be incident, a second surface inclined with respect to the first surface, and a third surface inclined with respect to the first surface and the second surface, and a second optical member including a fourth surface though which light is configured to exit, a fifth surface inclined with respect to the fourth surface, and a sixth surface inclined with respect to the fourth surface and the fifth surface and configured to face the third surface.

The present disclosure relates to a solid-state image pickup device and an electronic apparatus by which a phase-difference detection pixel that avoids defects such as lowering of sensitivity to incident light and lowering of phase-difference detection accuracy can be realized. A solid-state image pickup device as a first aspect of the present disclosure is a solid-state image pickup device in which a normal pixel that generates a pixel signal of an image and a phase-difference detection pixel that generates a pixel signal used in calculation of a phase-difference signal for controlling an image-surface phase difference AF function are arranged in a mixed manner, in which, in the phase-difference detection pixel, a shared on-chip lens for condensing incident light to a photoelectric converter that generates a pixel signal used in calculation of the phase-difference signal is formed for every plurality of adjacent phase-difference detection pixels. The present disclosure is applicable to a backside illumination CMOS image sensor and an electronic apparatus equipped with the same.

To improve reliability of a solid-state imaging apparatus. A solid-state imaging apparatus includes: a chip; and a transparent member. A solid-state image sensor is formed in the chip. The transparent member is directly joined to the chip via a projecting portion. The projecting portion of the transparent member is formed so as to maintain a gap between the transparent member and an imaging region of the solid-state image sensor of the chip. A protective film may be formed on a semiconductor substrate via an anti-reflection film. A color filter or an on-chip lens may be formed for each pixel in the imaging region of the solid-state image sensor of the chip.

Embodiments of this application disclose a camera module and an electronic device. The camera module includes a color filter layer. The color filter layer includes an electrochromic region and a plurality of color filter regions. Each color filter region is used for transmitting a spectrum of a band corresponding to the color filter region. The electrochromic region has a fully light-transmissive state and a filter state. In the fully light-transmissive state, the electrochromic region is used for transmitting spectra of a plurality of different bands. In the filter state, the electrochromic region is used for transmitting spectra of a same band.

A solid-state imaging element including a lens array in which micro lenses are formed in an alignment, a flattening layer formed on the lens array, and a diffraction grating part including a thermosetting resin, has diffraction gratings, and is provided on the flattening layer. A solid-state imaging element including a lens array in which micro lenses are in an alignment, a flattening layer formed on the lens array, and a diffraction grating part including a base that covers the entire upper surface of the flattening layer, and diffraction gratings provided so as to protrude from the base.

A method for manufacturing a semiconductor optical device for a LIDAR sensor system for a vehicle includes (a) forming a plurality of microlens structures at respective first locations on a first major surface of respective first and second semiconductor wafers. The method includes (b) forming a plurality of notch structures at respective second locations on a second major surface of the respective first and second semiconductor wafers, wherein the respective second locations on the second major surface are substantially opposite the respective first locations on the first major surface. The method includes (c) bonding the second major surface of the first semiconductor wafer to the second major surface of the second semiconductor wafer to form a semiconductor wafer pair. The method includes (d) dicing the semiconductor wafer pair to segment the semiconductor wafer pair into a plurality of individual semiconductor optical devices.