An image sensor includes a sensor substrate including a plurality of pixels that are two-dimensionally disposed in a first direction and a second direction; and a nano-photonic lens array including a first pixel corresponding region, a second pixel corresponding region, a third pixel corresponding region, and a fourth pixel corresponding region respectively corresponding to the plurality of pixels, wherein each of the first to fourth pixel corresponding regions includes a plurality of nano-structures that are arranged to condense light of a first wavelength, light of a second wavelength, and light of a third wavelength respectively onto the plurality of pixels, and in each of the second pixel corresponding region and the fourth pixel corresponding region, cross-sectional area sizes of the plurality of nano-structures are distributed asymmetrically in the first direction, the second direction, and a first diagonal direction, and are distributed symmetrically in a second diagonal direction that crosses the first diagonal direction.

A semiconductor device is provided as a back-illuminated solid-state imaging device. The device is manufactured by bonding a first semiconductor wafer with a pixel array in a half-finished product state and a second semiconductor wafer with a logic circuit in a half-finished product state together, making the first semiconductor wafer into a thin film, electrically connecting the pixel array and the logic circuit, making the pixel array and the logic circuit into a finished product state, and dividing the first semiconductor wafer and the second semiconductor being bonded together into microchips.

An image pickup element includes: a semiconductor substrate including a photoelectric conversion section for each pixel; a pixel separation groove provided in the semiconductor substrate; and a fixed charge film provided on a light-receiving surface side of the semiconductor substrate, wherein the fixed charge film includes a first insulating film and a second insulating film, the first insulating film being provided contiguously from the light-receiving surface to a wall surface and a bottom surface of the pixel separation groove, and the second insulating film being provided on a part of the first insulating film, the part corresponding to at least the light-receiving surface.

The present technology relates to a solid-state imaging device that can improve the sensitivity of imaging pixels while maintaining AF properties of a focus detecting pixel. The present technology also relates to a method of manufacturing the solid-state imaging device, and an electronic apparatus. The solid-state imaging device includes: a pixel array unit including pixels; first microlenses formed in the respective pixels; a film formed to cover the first microlenses of the respective pixels; and a second microlens formed on the film of the focus detecting pixel among the pixels. The present technology can be applied to CMOS image sensors, for example.

The present technology relates to a solid-state imaging device, a manufacturing method, and an electronic device, which can improve sensitivity while improving color mixing. The solid-state imaging device includes a first wall provided between a pixel and a pixel arranged two-dimensionally to isolate the pixels, in which the first wall includes at least two layers including a light shielding film of a lowermost layer and a low refractive index film of which refractive index is lower than the light shielding film. The present technology can be applied to, for example, a solid-state imaging device, an electronic device having an imaging function, and the like.

The present technology relates to a solid-state imaging device, a driving method therefor, and an electronic apparatus capable of acquiring a signal to detect phase difference and a signal to generate a high dynamic range image at the same time. The solid-state imaging device includes a pixel array unit in which a plurality of pixels that receives light of a same color is arranged under one on-chip lens. The plurality of pixels uses at least one pixel transistor in a sharing manner, some pixels out of the plurality of pixels are set to have a first exposure time, and other pixels are set to have a second exposure time shorter than the first exposure time. The present technology can be applied to, for example, a solid-state imaging device or the like.

The present disclosure relates to an image pickup device and an electronic apparatus that enable further downsizing of device size. The device includes: a first structural body and a second structural body that are layered, the first structural body including a pixel array unit, the second structural body including an input/output circuit unit, and a signal processing circuit; a first through-via, a signal output external terminal, a second through-via, and a signal input external terminal that are arranged below the pixel array, the first through-via penetrating through a semiconductor substrate constituting a part of the second structural body, the second through-via penetrating through the semiconductor substrate; a substrate connected to the signal output external terminal and the signal input external terminal; and a circuit board connected to a first surface of the substrate. The present disclosure can be applied to, for example, the image pickup device, and the like.

An imaging device connected to a neural network is provided. An imaging device having a neuron in a neural network includes a plurality of first pixels, a first circuit, a second circuit, and a third circuit. Each of the plurality of first pixels includes a photoelectric conversion element. The plurality of first pixels is electrically connected to the first circuit. The first circuit is electrically connected to the second circuit. The second circuit is electrically connected to the third circuit. Each of the plurality of first pixels generates an input signal of the neuron. The first circuit, the second circuit, and the third circuit function as the neuron. The third circuit includes an interface connected to the neural network.

A MEMS optical device including: a semiconductor body; a main cavity, which extends within the semiconductor body; a membrane suspended over the main cavity; a piezoelectric actuator, which is mechanically coupled to the membrane and can be electronically controlled so as to deform the membrane; a micro-lens, mechanically coupled to the membrane so as to undergo deformation following the deformation of the membrane; and a rigid optical element, which contacts the micro-lens and is arranged so that the micro-lens is interposed between the rigid optical element and the membrane. The micro-lens and the main cavity are arranged on opposite sides of the membrane.

Reflected light from a back-illuminated photoelectric conversion element is to be reduced. The photoelectric conversion element includes an on-chip lens, a substrate, a front-surface-side reflective film, and a back-surface-side reflective film. The on-chip lens condenses incident light. A photoelectric conversion unit that performs photoelectric conversion on the condensed incident light is disposed in the substrate, and the back surface side of the substrate is irradiated with the condensed incident light. The front-surface-side reflective film is disposed on the front surface side that is a different side from the back surface side of the substrate, and reflects transmitted light that is the incident light having passed through the photoelectric conversion unit. The back-surface-side reflective film is disposed on the back surface side of the substrate, has an opening of substantially the same size as the condensing size of the condensed incident light, and further reflects the reflected transmitted light.