A system and method for reducing cross-talk between photosensitive diodes is provided. In an embodiment a first color filter is formed over a first photosensitive diode and a second color filter is formed over a second photosensitive diode, and a gap is formed between the first color filter and the second color filter. The gap will serve to reflect light that otherwise would have crossed from the first color filter to the second color filter, thereby reducing cross-talk between the first photosensitive diode and the second photosensitive diode. A reflective grid may also be formed between the first photosensitive diode and the second photosensitive diode in order to assist in the reflection and further reduce the amount of cross-talk.

It is an object to provide a flexible light-emitting device with high reliability in a simple way. Further, it is an object to provide an electronic device or a lighting device each mounted with the light-emitting device. A light-emitting device with high reliability can be obtained with the use of a light-emitting device having the following structure: an element portion including a light-emitting element is interposed between a substrate having flexibility and a light-transmitting property with respect to visible light and a metal substrate; and insulating layers provided over and under the element portion are in contact with each other in the outer periphery of the element portion to seal the element portion. Further, by mounting an electronic device or a lighting device with a light-emitting device having such a structure, an electronic device or a lighting device with high reliability can be obtained.

There is provided an imaging device that includes photovoltaic type pixels that have photoelectric conversion regions generating photovoltaic power for each pixel depending on irradiation light; and an element isolation region that is provided between the photoelectric conversion regions of adjacent pixels and in a state of substantially surrounding the photoelectric conversion region.

An image sensor is provided. The image sensor includes a substrate, a first interlayer insulating layer, a first metal line, and a shielding structure. The substrate includes a pixel array, a peripheral circuit area, and an interface area disposed between the pixel array and the peripheral circuit area. The first interlayer insulating layer is formed on a first surface of the substrate. The first metal line is disposed on the first interlayer insulating layer of the pixel array. The second interlayer insulating layer is disposed on the first interlayer insulating layer wherein the second interlayer insulating layer covers the first metal line. The shielding structure passes through the substrate in the interface area wherein the shielding structure electrically insulates the pixel array of the substrate and the peripheral circuit area.

An imaging pixel may be provided with a photodiode and a floating diffusion region. The pixel may include multiple charge storage regions interposed between the photodiode and the floating diffusion region. A first charge storage region may be used to store charge from the photodiode for global shutter functionality. A second charge storage region may not be coupled to the photodiode. The second charge storage region may be used to determine how much charge is generated in the charge storage region from incident light on the charge storage region. The second charge storage region may help account for incident light noise in the first charge storage region. The second charge storage region may be the same size as the first charge storage region, or may be smaller than the first charge storage region.

A method of manufacturing an image sensor device includes, in a first manufacturing facility, forming a first set of patterned silicon, metal, and insulating layers on a glass substrate, forming an electrical and mechanical protection layer over the first set of patterned silicon, metal, and insulating layers, and, in a second manufacturing facility, removing the electrical and mechanical protection layer, forming a second set of patterned silicon, metal, and insulating layers over the first set of patterned silicon, metal, and insulating layers, forming a plurality of photosensors in communication with at least the second set of patterned silicon, metal, and insulating layers to form an unpassivated image sensor device, and forming a passivation layer over the unpassivated image sensor device. The materials used in the first set of layers and second set of layers can be completely or partially different.

The solid-state imaging device of the present disclosure includes a signal processing unit including an AD converter that digitizes an analog pixel signal read from each pixel of the pixel array unit to a signal line, the signal processing unit transferring digitized pixel data at a first speed higher than a frame rate; a memory unit that stores the pixel data transferred from the signal processing unit; a data processing unit that reads pixel data at a second speed lower than the first speed from the memory unit; and a control unit that, when the pixel data is read from the memory unit, controls to stop operation of a current source connected with the signal line and operation of at least the AD converter of the signal processing unit.

A hybrid pixel sensor array is provided. Each pixel of the array comprises: a sensor for generating an imaging signal; a Charged-Coupled Device (CCD) array, coupled to the sensor so as to receive samples from the imaging signal and configured for storage of a plurality of samples; and active CMOS circuitry, coupled to the CCD array for generating a pixel output signal from the stored samples. The sensors of the pixels are part of a sensor portion of the hybrid pixel sensor array that is separate from both the CCD array and active CMOS circuitry of the pixels.

A semiconductor device has a chip region including a back-side illumination type photoelectric conversion element, a mark-like appearance part, a pad electrode, and a coupling part. The mark-like appearance part includes an insulation film covering the entire side surface of a trench part formed in a semiconductor substrate. The pad electrode is arranged at a position overlapping the mark-like appearance part. The coupling part couples the pad electrode and mark-like appearance part. At least a part of the pad electrode on the other main surface side of the substrate is exposed through an opening reaching the pad electrode from the other main surface side of the substrate. The mark-like appearance part and coupling part are arranged to at least partially surround the outer circumference of the opening in plan view.

A bio-sensor includes a substrate having a light-sensing region thereon. A first dielectric layer, a diffusion barrier layer, and a second dielectric layer are disposed on the substrate. A trenched recess structure is formed in the second dielectric layer, which is filled with a light filter layer that is capped with a cap layer. A first passivation layer and a nanocavity construction layer are disposed on the cap layer. A nanocavity is formed in the nanocavity construction layer. The sidewall and bottom surface of the nanocavity is lined with a second passivation layer.