A biosensor includes a stretchable substrate, a pixel defining layer on the stretchable substrate and including a first pixel defining layer at least partially defining a first opening and a second pixel defining layer at least partially defining a second opening, a photo-detecting element at least partially in the first opening, and a first light emitting element at least partially in the second opening, wherein an area of the first pixel defining layer is equal to or greater than about twice an area of the first opening.

A photoelectric conversion portion, a charge holding portion, a transfer portion, and a sense node are formed in a P-type well. The charge holding portion is configured to include an N-type semiconductor region, which is a first semiconductor region holding charges in a portion different from the photoelectric conversion portion. A P-type semiconductor region having a higher concentration than the P-type well is disposed under the N-type semiconductor region.

An image sensor has an array of light-sensitive pixels. Each pixel of the array includes a photodiode and a plurality of capacitors configured to store charge from the photodiode. The image sensor has an address decoder, coupled to the array of light-sensitive pixels. In at least one mode of operation, portions of the array of light-sensitive pixels to capture respective image exposures. The portions may include interlaced rows of pixels of the array of light-sensitive pixels, blocks of rows of pixels of the array of light-sensitive pixels, interlaced columns of pixels of the array of light-sensitive pixels, interlaced columns and rows of pixels of the array of light-sensitive pixels, blocks of columns and rows of pixels of the array of light-sensitive pixels, etc.

In some embodiments, the present disclosure relates to a back-side image (BSI) sensor having a global shutter pixel with a reflective material that prevents contamination of a pixel-level memory node. In some embodiments, the BSI image sensor has an image sensing element arranged within a semiconductor substrate and a pixel-level memory node arranged within the semiconductor substrate at a location laterally offset from the image sensing element. A reflective material is also arranged within the semiconductor substrate at a location between the pixel-level memory node and a back-side of the semiconductor substrate. The reflective material has an aperture that overlies the image sensing element. The reflective material allows incident radiation to reach the image sensing element while preventing the incident radiation from reaching the pixel-level memory node, thereby preventing contamination of the pixel-level memory node.

In a photoelectric conversion device, groups of unit pixels are arranged in a well, where each of the unit pixels includes photoelectric conversion elements, an amplifier transistor, and transfer transistors. The photoelectric conversion device includes a line used to supply a voltage to the well, a well-contact part used to connect the well-voltage-supply line to the well, and transfer-control lines used to control the transfer transistors. The transfer-control lines are symmetrically arranged with respect to the well-voltage-supply line in respective regions of the unit-pixel groups.

A pixel arrangement includes a photodiode, a reset transistor configured to be controlled by a reset signal and coupled to a reset input voltage, a transfer gate transistor configured to transfer charge from the photodiode to a node, wherein the transfer gate transistor is controlled by a transfer gate voltage, and a source follower transistor controlled by the voltage on the node and coupled to a source follower voltage. A capacitor is coupled between the node and an input voltage. During a read operation the input voltage is increased to boost the voltage at the node. The increased input voltage may, for example, be one the reset input voltage, said source follower voltage, said transfer gate voltage and a boosting voltage.

An imaging device has a sensor chip and a signal processing chip. The sensor chip includes a pixel array in which a plurality of pixels are arranged in a 2-dimensional matrix and a data output terminal group made up of a plurality of data output terminals which output analog signals of pixels for each pixel column of the pixel array. The signal processing chip includes a data input terminal group electrically coupled to the data output terminal group, a plurality of A/D converters which convert analog signals of pixels received by the data input terminal group into digital signals for each pixel column of the pixel array, and a control unit which controls operation of the plurality of A/D converters.

A pixel of a distance sensor includes a photosensor that generates photocharges corresponding to light incident in a first direction. The photosensor includes a plurality of first layers having a cross-sectional area increasing along the first direction after a first depth and at least one transfer gate which receives a transfer control signal for transferring the photocharges to a floating diffusion node. A strong electric field is formed in the direction in which the photocharges move horizontally or vertically in the pixel, thereby accelerating the photocharges, allowing for increased sensitivity and demodulation contrast.

A solid-state imaging device includes a photoelectric conversion section which is disposed on a semiconductor substrate and which photoelectrically converts incident light into signal charges, a pixel transistor section which is disposed on the semiconductor substrate and which converts signal charges read out from the photoelectric conversion section into a voltage, and an element isolation region which is disposed on the semiconductor substrate and which isolates the photoelectric conversion section from an active region in which the pixel transistor section is disposed. The pixel transistor section includes a plurality of transistors. Among the plurality of transistors, in at least one transistor in which the gate width direction of its gate electrode is oriented toward the photoelectric conversion section, at least a photoelectric conversion section side portion of the gate electrode is disposed within and on the active region with a gate insulating film therebetween.

A solid-state imaging device includes a photoelectric conversion unit, a light shielding unit and a transfer transistor. The photoelectric conversion unit generates charges by photoelectrically converting light. The light shielding unit is formed by engraving a semiconductor substrate on which the photoelectric conversion unit is formed, so as to surround an outer periphery of the photoelectric conversion unit. The transfer transistor transfers charges generated in the photoelectric conversion unit. During a charge accumulation period in which charges are accumulated in the photoelectric conversion unit, a potential that repels the charges is supplied to the light shielding unit and a gate electrode of the transfer transistor. During a charge transfer period in which charges are transferred from the photoelectric conversion unit, a potential that repels the charges is supplied to the light shielding unit and a potential that attracts the charges is supplied to the gate electrode of the transfer transistor.