An image-sensor device is provided. The image-sensor device includes a semiconductor substrate and a radiation-sensing region in the semiconductor substrate. The image-sensor device also includes a doped isolation region adjacent to the radiation-sensing region. The image-sensor device further includes a dielectric film extending into the doped isolation region from a surface of the semiconductor substrate. A portion of the doped isolation region is between the dielectric film and the radiation-sensing region.

A semiconductor device includes a substrate, a device layer, a composite grid structure, a passivation layer and color filters. The device layer overlies the substrate. The composite grid structure overlies the device layer. The composite grid structure includes cavities passing through the composite grid structure, and the composite grid structure includes a metal grid layer and a dielectric grid layer stacked on the metal grid layer. The passivation layer conformally covers the composite grid structure. The color filters respectively fill the cavities.

According to an embodiment, a detector pack comprises a first substrate and a second substrate. the first substrate includes a first surface and a second surface. the first substrate is provided with an X-ray detecting element in the first surface. the second substrate includes a third surface and a fourth surface. The second substrate is disposed in the second surface to face the third surface. The second substrate is provided with a data acquisition circuit in the third surface. The first substrate and the second substrate are formed as a stacked body. The data acquisition circuit is provided in the third surface not to come in contact with the second surface of the first substrate.

Provided is a semiconductor device having a light receiving element in which a plurality of photodiodes are formed on a top surface of a P-type semiconductor substrate, an insulating oxide film is formed on surfaces of the photodiodes 51 via a buried oxide film, and an SOI layer of single crystal silicon is formed between a photodiode and an adjacent photodiode via the buried oxide film for shielding unnecessary light.

An image sensor includes a substrate having adjacent pixel regions and respective photodiode regions therein, and a pixel separation portion including a trench extending into the substrate between the adjacent pixel regions. The trench includes a conductive common bias line therein and an insulating device isolation layer between the common bias line and surfaces of the trench. A conductive interconnection is coupled to the common bias line and is configured to provide a negative voltage thereto. Related fabrication methods are also discussed.

An image-sensor structure is provided. The image-sensor structure includes a substrate, a plurality of photoelectric conversion units formed in the substrate, a plurality of separated color filters formed above the substrate and the photoelectric conversion units, a first light shielding layer surrounding the separated color filters, and a first conductive polymer element blended with a low-refractive-index component filled between the individual separated color filters and between the all separated color filters and the first light shielding layer, wherein the first conductive polymer element is electrically connected to a grounding pad.

An image sensor includes a substrate including a light-receiving region and a light-shielding region, a device isolation pattern in the substrate of the light-receiving region to define active pixels, and a device isolation region in the substrate of the light-shielding region to define reference pixels. An isolation technique of the device isolation pattern is different from that of the device isolation region.

An integrated circuit structure includes a semiconductor substrate, and a dielectric pad extending from a bottom surface of the semiconductor substrate up into the semiconductor substrate. A low-k dielectric layer is disposed underlying the semiconductor substrate. A first non-low-k dielectric layer is underlying the low-k dielectric layer. A metal pad is underlying the first non-low-k dielectric layer. A second non-low-k dielectric layer is underlying the metal pad. An opening extends from a top surface of the semiconductor substrate down to penetrate through the semiconductor substrate, the dielectric pad, and the low-k dielectric layer, wherein the opening lands on a top surface of the metal pad. A passivation layer includes a portion on a sidewall of the opening, wherein a portion of the passivation layer at a bottom of the opening is removed.

Provided is a solid-state imaging device including a lamination-type backside illumination CMOS (Complementary Metal Oxide Semiconductor) image sensor having a global shutter function. The solid-state imaging device includes a separation film including one of a light blocking film and a light absorbing film between a memory and a photo diode.

An image capturing apparatus includes an image sensor having a plurality of pixels and being capable of outputting a plurality of image signals read out using different methods for individually reading out the signals of the plurality of pixels and correction signals for correcting the plurality of image signals, a processing unit for processing the correction signals so as to handle the reading methods for the plurality of image signals, and a correction unit for correcting the plurality of image signals using the correction signals processed by the processing unit.