An image sensor includes: a sensor substrate including a first pixel and a second pixel; and a color separating lens array for condensing light of first wavelength onto the first pixel by changing a phase of light of the first wavelength included in incident light, wherein the sensor substrate further includes: an active pixel area for outputting an active pixel signal for image generation; a first dummy pixel area arranged outside the active pixel area and outputting a dummy pixel signal to correct image data generated from the active pixel signal; and a second dummy pixel area arranged outside the active pixel area and the first dummy pixel area and not outputting any pixel signal.

There is provided a solid-state imaging device including a substrate having a surface over which a plurality of photodiodes are formed, and a protection film that is transparent, has a water-proofing property, and includes a side wall part vertical to the surface of the substrate and a ceiling part covering a region surrounded by the side wall part, the side wall part and the ceiling part surrounding a region where the plurality of photodiodes are arranged over the substrate.

A movement detection device, including a multi-element photodiode, the multi-element photodiode comprising a plurality of pixels, referred to as megapixels, and, for at least one megapixel of the multi-element photodiode, a mask partially obscuring a sensitive zone of said megapixel, the mask consisting of a plurality of zones including at least one opaque zone and at least one transparent zone, an opaque zone being able to prevent a light beam from fully reaching portions of the sensitive zone of the megapixel corresponding to the opaque zone, a transparent zone being able to allow a light beam to reach a portion of the sensitive surface of the megapixel corresponding to the transparent zone, each opaque zone having at least one adjacent transparent zone so as to obtain an alternation of opaque zones and transparent zones in the mask.

In a photoelectric changing unit, a photoelectric conversion unit converts light into electric charge, and an electric charge accumulation unit accumulates the electric charge in a polygonal area whose plurality of sides are adjacent to the photoelectric conversion unit on a light receiving surface. A voltage generation unit accumulates the electric charge and generates a voltage according to an amount of the accumulated electric charge. A first transfer unit transfers the electric charge from the photoelectric conversion unit to the electric charge accumulation unit when an instruction on a transfer to the electric charge accumulation unit is issued. A second transfer unit transfers the electric charge from the electric charge accumulation unit to the voltage generation unit when an instruction on a transfer to the voltage generation unit is issued.

An image sensor is provided. The image sensor includes a light shielding layer having a grid structure corresponding to a device isolation layer defining a plurality of pixel regions. The light shielding layer includes holes exposing the plurality of pixel regions, respectively. The light shielding layer is connected to a charge pump applying a negative voltage.

Presented herein is a device including an image sensor having a plurality of pixels disposed in a substrate and configured to sense light through a back side of the substrate and an RDL disposed on a front side of the substrate and having a plurality of conductive elements disposed in one or more dielectric layers. A sensor shield is disposed over the back side of the substrate and extending over the image sensor. At least one via contacts the sensor shield and extends from the sensor shield through at least a portion of the RDL and contacts at least one of the plurality of conductive elements.

An area sensor of the present invention has a function of displaying an image in a sensor portion by using light-emitting elements and a reading function using photoelectric conversion devices. Therefore, an image read in the sensor portion can be displayed thereon without separately providing an electronic display on the area sensor. Furthermore, a photoelectric conversion layer of a photodiode according to the present invention is made of an amorphous silicon film and an N-type semiconductor layer and a P-type semiconductor layer are made of a polycrystalline silicon film. The amorphous silicon film is formed to be thicker than the polycrystalline silicon film. As a result, the photodiode according to the present invention can receive more light.

An angle limiting filter includes: a first light-shielding layer containing a first light-shielding material and provided with a first opening; a second light-shielding layer containing a second light-shielding material and located in a region which surrounds at least one portion of the first light-shielding layer; a third light-shielding layer containing the first light-shielding material, provided with a second opening at least one portion of which overlaps the first opening, and located above the first light-shielding layer; and a fourth light-shielding layer containing the second light-shielding material and located above the second light-shielding layer in a region which surrounds at least one portion of the third light-shielding layer.

A method includes forming a plurality of pixels formed on a front surface of a semiconductor substrate, forming an array of color filters over the plurality of pixels, each color filter being adapted for allowing a wavelength of light radiation to reach at least one of the plurality of pixels, forming a plurality of micro-lenses over the array of color filters, and forming a second layer between the pixels and the color filters. The second layer further includes a structure adapted for blocking light radiation that is traveling towards a region between adjacent micro-lens, further wherein the plurality of micro-lenses are in contact with the array of color filters, and wherein the structure and the transparent material are coplanar at respective top surfaces thereof, and further wherein the structure directly contacts a bottom surface of at least one of the color filters.

Provided is a semiconductor device including: a first substrate having a first circuit manufactured thereon; a second substrate having a second circuit manufactured thereon and being arranged to be spaced apart from the first substrate; connection part that is arranged between the first substrate and the second substrate and electrically connect the first circuit and the second circuit; and a shielding layer that is sandwiched, together with the connection part, between the first substrate and the second substrate, is arranged so as to surround the connection part, and is connected to an electric potential with a constant value within at least one of the first substrate and the second substrate.