PLS resistance is improved in a solid-state imaging element in which all pixels are simultaneously exposed. A front-stage transfer transistor transfers a charge from a photoelectric conversion element to a front-stage charge holding region and a rear-stage charge holding region which have different capacities. A rear-stage transfer transistor transfers the charge from the rear-stage charge holding region to a floating diffusion region. An intermediate transfer transistor transfers a charge, which remains in the front-stage charge holding region after the charge has been transferred from the rear-stage charge holding region to the floating diffusion region, to the floating diffusion region via the front-stage charge holding region.

An image sensor that includes a substrate including a first photodiode (PD) region and a second PD region adjacent to the first PD region; a first PD having a first area in the first PD region; a second PD in the second PD region, the second PD having a second area smaller than the first area; a micro-lens on the substrate and covering the first PD region; and a light splitter between the substrate and the micro-lens, the light splitter including a material having a refractive index different from a refractive index of the micro-lens. The light splitter extends from the first PD region to the second PD region.

A detection device includes a substrate, a photodiode provided on the substrate, a lens provided so as to overlap the photodiode, a light-blocking layer that is provided between the photodiode and the lens, and is provided with an opening in a region overlapping the photodiode, and a light-transmitting resin layer and a buffer layer that are stacked between the light-blocking layer and the lens. The lens is provided in direct contact with a top of the buffer layer.

According to an embodiment, an electronic device may comprise: at least one lens, an image sensor aligned along an optical axis from the at least one lens, and an optical member comprising a prism and/or mirror disposed between the at least one lens and the image sensor on the optical axis. The optical member may include a first optical member including a first surface on which light passing through the at least one lens is configured to be incident, a second surface inclined with respect to the first surface, and a third surface inclined with respect to the first surface and the second surface, and a second optical member including a fourth surface though which light is configured to exit, a fifth surface inclined with respect to the fourth surface, and a sixth surface inclined with respect to the fourth surface and the fifth surface and configured to face the third surface.

The present disclosure relates to a solid-state image pickup device and an electronic apparatus by which a phase-difference detection pixel that avoids defects such as lowering of sensitivity to incident light and lowering of phase-difference detection accuracy can be realized. A solid-state image pickup device as a first aspect of the present disclosure is a solid-state image pickup device in which a normal pixel that generates a pixel signal of an image and a phase-difference detection pixel that generates a pixel signal used in calculation of a phase-difference signal for controlling an image-surface phase difference AF function are arranged in a mixed manner, in which, in the phase-difference detection pixel, a shared on-chip lens for condensing incident light to a photoelectric converter that generates a pixel signal used in calculation of the phase-difference signal is formed for every plurality of adjacent phase-difference detection pixels. The present disclosure is applicable to a backside illumination CMOS image sensor and an electronic apparatus equipped with the same.

According to an aspect, a detection device includes: a substrate; a photodiode that is provided on the substrate and in which a lower electrode, a lower buffer layer, an active layer, an upper buffer layer, and an upper electrode are stacked on the substrate in the order as listed; a signal line that is provided between the substrate and the photodiode in a direction orthogonal to the substrate and is electrically coupled to the lower electrode of the photodiode; a detection circuit electrically coupled to the photodiode via the signal line; and a shield layer that is provided between the signal line and the lower buffer layer in the direction orthogonal to the substrate and is configured to be supplied with a reference voltage.

There is provided a detection panel, including: a substrate, gate lines, signal detection lines and pixels, a thin film transistor and an optical sensor are arranged in each pixel, the thin film transistor has a gate coupled with the corresponding gate line, a first electrode coupled with the corresponding signal detection line, and a second electrode coupled with a third electrode of the optical sensor in the same pixel; the pixels include at least one detecting pixel and at least one marking pixel, a first bias voltage line and a second bias voltage line are arranged on a side of the optical sensor away from the substrate, a fourth electrode of the optical sensor in the detecting pixel is coupled with the corresponding first bias voltage line, and the second electrode of the thin film transistor in the marking pixel is coupled with the corresponding second bias voltage line.

The present disclosure relates to a solid-state imaging device, a method for driving the solid-state imaging device, and an electronic device capable of improving auto-focusing accuracy by using a phase difference signal obtained by using a photoelectric conversion film. The solid-state imaging device includes a pixel including a photoelectric conversion portion having a structure where a photoelectric conversion film is interposed by an upper electrode on the photoelectric conversion film and a lower electrode under the photoelectric conversion film. The upper electrode is divided into a first upper electrode and a second upper electrode. The present disclosure can be applied to, for example, a solid-state imaging device or the like.

An optical sensor includes a substrate, a photoelectric element disposed on the substrate and that includes a first electrode, an intermediate layer disposed on the first electrode, and a second electrode disposed on the intermediate layer, a barrier layer disposed on the second electrode, an insulating layer that covers the photoelectric element and the barrier layer, and a bias electrode disposed on the insulating layer and electrically connected to the second electrode. The barrier layer is spaced apart from the first electrode.

An image sensor includes: a first pixel having a first photoelectric conversion unit that photoelectrically converts light having entered therein, and a first light blocking unit that blocks a part of light about to enter the first photoelectric conversion unit; and a second pixel having a second photoelectric conversion unit that photoelectrically converts light having entered therein and a second light blocking unit that blocks a part of light about to enter the second photoelectric conversion unit, wherein: the first photoelectric conversion unit and the first light blocking unit are set apart from each other by a distance different from a distance setting apart the second photoelectric conversion unit and the second light blocking unit.