A solid-state imaging apparatus includes: a solid-state imaging device photoelectrically converting light taken by a lens; and a light shielding member shielding part of light incident on the solid-state imaging device from the lens, wherein an angle made between an edge surface of the light shielding member and an optical axis direction of the lens is larger than an incident angle of light to be incident on an edge portion of the light shielding member.

The present disclosure relates to a solid-state imaging device, a signal processing method therefor, and an electronic apparatus enabling sensitivity correction in which a sensitivity difference between solid-state imaging devices is suppressed.

The solid-state imaging device includes a pixel unit in which one microlens is formed for a plurality of pixels in a manner such that a boundary of the microlens coincides with boundaries of the pixels. The correction circuit corrects a sensitivity difference between the pixels inside the pixel unit based on a correction coefficient. The present disclosure is applicable to, for example, a solid-state imaging device and the like.

A solid-state imaging apparatus includes: a solid-state imaging device photoelectrically converting light taken by a lens; and a light shielding member shielding part of light incident on the solid-state imaging device from the lens, wherein an angle made between an edge surface of the light shielding member and an optical axis direction of the lens is larger than an incident angle of light to be incident on an edge portion of the light shielding member.

The present technology relates to a solid-state imaging device, manufacturing method of a solid-state imaging device, and an electronic device, which can provide a solid-state imaging device having further improved features such as reduced optical color mixing and the like. Also, an electronic device using the solid-state imaging device thereof is provided. According to a solid-state imaging device having a substrate and multiple photoelectric converters that are formed on the substrate, an insulating film forms an embedded element separating unit. The element separating unit is configured of an insulating film having a fixed charge that is formed so as to coat the inner wall face of a groove portion, within the groove portion which is formed in the depth direction from the light input side of the substrate.

The invention relates to provide an infrared shielding composition that can form an infrared cut filter in which flat coating properties are excellent and the generation of a pattern on the surface is suppressed and that has excellent drying resistance, an infrared cut filter, and a solid-state imaging device. The infrared shielding composition according to the invention includes at least metal containing tungsten oxide particles; a resin binder; a solvent A of which a boiling point is 170 C. to 200 C. at 1 atm; and a solvent B different from the solvent A, in which a content of the solvent A is 0.1 to 20 mass % with respect to a total mass of the infrared shielding composition.

A charge-modulation element includes a first charge-accumulation region, a second charge-accumulation region, a third charge-accumulation region, and a fourth charge-accumulation region, provided symmetric with respect to a center position of a light-receiving area, and a first field-control electrode pair, a second field-control electrode pair, a third field-control electrode pair, and a fourth field-control electrode pair, arranged on both sides of respective charge transport paths, for changing depletion potentials of the charge transport paths, which extend from the center position of the light-receiving area to the first charge-accumulation region, the second charge-accumulation region, the third charge-accumulation region, and the fourth charge-accumulation region.

A wafer level camera module includes an image sensor including an imaging region formed on a top surface thereof, a first support layer disposed on the image sensor and having an opening, and first and second zooming units sequentially stacked having a second support layer interposed therebetween. Each zooming unit includes a piezoelectric thin film disposed on the first support layer and having an opening. Each zooming unit further includes a deformable layer disposed on the piezoelectric thin film. Each zooming unit additionally includes a lens attached to the deformable layer and positioned to overlap the imaging region. The wafer level camera module additionally includes a first conductive via penetrating through the camera module to be electrically connected to the first piezoelectric thin film. The camera module further includes a second conductive via penetrating through the camera module to be electrically connected to the second piezoelectric thin film.

A semiconductor device including a substrate, at least one sensor, a dielectric layer, at least one light pipe structure, at least one pad, a shielding layer, and a protection layer is provided. The sensor is located in the substrate of a first region. The dielectric layer is located on the substrate. The light pipe structure is located in the dielectric layer of the first region. The light pipe structure corresponds to the sensor. The pad is located in the dielectric layer of a second region. The shielding layer is located on the dielectric layer, wherein the light pipe structure is surrounded by the shielding layer. The protection layer is located on the shielding layer. At least one pad opening is disposed in the dielectric layer, the shielding layer, and the protection layer above the pad. The pad opening exposes a top surface of the corresponding pad.

An image-capturing device includes an image-capturing unit 30 including a first image-capturing element 41, a second image-capturing element 51, a third image-capturing element 61, and a fourth image-capturing element 71, and includes an image processing unit 11, wherein a sensitivity of the fourth image-capturing element 71 is less than sensitivities of the first image-capturing element 41 to the third image-capturing element 61, and the image processing unit 11 generates high sensitivity image data on the basis of outputs from the first image-capturing element 41 to the third image-capturing element 61, and generates low sensitivity image data on the basis of an output from the fourth image-capturing element 71, and further, the image processing unit 11 generates a combined image using high sensitivity image data corresponding to a low illumination image area in the low illumination image area obtained from the low sensitivity image data or the high sensitivity image data, and using low sensitivity image data corresponding to an high illumination image area.

Provided is a solid-state imaging device including a lamination-type backside illumination CMOS (Complementary Metal Oxide Semiconductor) image sensor having a global shutter function. The solid-state imaging device includes a separation film including one of a light blocking film and a light absorbing film between a memory and a photo diode.