Various embodiments of SST dies and solid state lighting (SSL) devices with SST dies, assemblies, and methods of manufacturing are described herein. In one embodiment, a SST die includes a substrate material, a first semiconductor material and a second semiconductor material on the substrate material, an active region between the first semiconductor material and the second semiconductor material, and a support structure defined by the substrate material. In some embodiments, the support structure has an opening that is vertically aligned with the active region.

A semiconductor optical device, in which a light emitting region and a modulator region are integrated, includes a first mesa disposed in the light emitting region, protruding in a direction that intersects a light propagation direction, and including an active layer, first and second buried layers disposed on the first mesa in a direction that intersects the light propagation direction and sequentially stacked in a direction in which the first mesa protrudes, a first semiconductor layer disposed on the first mesa and the second buried layer, a second mesa disposed in the modulator region and including a light absorption layer, and a third buried layer disposed on the second mesa. The first semiconductor layer and the first buried layer each have a first conductivity type. The second buried layer has a second conductivity type different from the first conductivity type, and the third buried layer is a semi-insulating semiconductor layer.

A display device includes a substrate, a barrier layer, light-emitting diodes, and lenses. The barrier layer is provided on the substrate. The barrier layer has through holes. The light-emitting diodes are disposed in the through holes. The lenses is disposed at positions of the through holes. Each of the lenses has a first surface and a second surface, the second surface is a convex surface, and height of a top of the convex surface based on the substrate is greater than a height of an upper surface of the barrier layer based on the substrate. The first surface is opposed to the substrate with the light-emitting diode therebetween. The second surface is a back of the first surface.

A radiation-emitting component is specified witha carrier which has a top surface a radiation-emitting semiconductor chip arranged on the top surface of the carrier and configured to generate primary electromagnetic radiation, a first reflector layer arranged above a top surface of the semiconductor chip, and a cover body arranged between the first reflector layer and the radiation-emitting semiconductor chip, wherein a side surface of the cover body is inclined to the top surface of the carrier. Furthermore, a method for producing such a radiation-emitting component is specified.

A light emitting device includes: a resin package including: a resin part, and a plurality of leads including a first lead and a second lead, wherein the resin package has a concave portion having a bottom face at which a part of an upper surface of the first lead and a part of an upper surface of the second lead are exposed from the resin part; a light emitting element mounted on the bottom face of the concave portion; and a sealing member covering the light emitting element in the concave portion. The plurality of leads comprise a plurality of notch parts including a first notch part on a first side corresponding to a first outer side surface of the resin package and a second notch part on a second side corresponding to a second outer side surface of the resin package.

A light emitting device includes: a base substrate; a plurality of unit regions provided on the base substrate; a barrier disposed at a boundary of the unit regions to surround each of the unit regions; a dam disposed in each of the unit regions to be spaced apart from the barrier; a first electrode provided in each of unit light emitting regions surrounded by the dam; a second electrode disposed in each of the unit light emitting regions, the second electrode of which at least one region is provided opposite to the first electrode; and one or more LEDs provided in each of the unit light emitting regions, the one or more LEDs being electrically connected between the first electrode and the second electrode.

A light emitting diode package includes a body part having a cavity at the upper part thereof and having a long shape in one direction; and a first lead frame and a second lead frame which are coupled to the bottom of the body part and spaced apart from each other in a transverse direction. The first lead frame includes a first mounting part exposed in the cavity; a first terminal part exposed to one side surface of the body part; and a first connection part exposed to the lower surface of the body part. The second lead frame includes a second mounting part exposed in the cavity; a second terminal part exposed to the other side surface of the body part along a one-side direction; and a second connection part exposed to the lower surface of the body part.

Light-emitting diode (LED) packages and more particularly anchored light mixing structures in LED packages and related methods are disclosed. LED packages include one or more LED chips and integrated light mixing structures, such as light collectors, that are placed over the LED chips to modify far field patterns. Light mixing structures are provided within recesses of LED package housings in positions over the LED chips. Sidewalls of recesses may include alignment features with shapes configured to receive corresponding shapes of light mixing structures. Alternative configurations, alone or in combination with the sidewall alignment features, may include alignment features on top surfaces of the LED packages outside of a recess. As disclosed herein, alignment features are arranged to effectively anchor a light mixing structure in place during package assembly. Additional package structures, such as encapsulants and/or epoxies, may further hold the light mixing structures in place.

A semiconductor device arrangement structure includes a carrier, a first semiconductor device, a second semiconductor device, a first adhesive part, and a second adhesive part. The first semiconductor device and the second semiconductor device are located on the carrier and separated from each other. The first adhesive part and the second adhesive part are separated from each other. The first adhesive part is located between the first semiconductor device and the carrier, and the second adhesive part is located between the second semiconductor device and the carrier. In a top view, the first adhesive part has a first outer contour surrounding the first semiconductor device. The first outer contour has at least one round corner.

A light emitting device includes a light emitting diode chip, a light transmitting member, a white barrier member, and a conductive adhesive member. The light emitting diode chip has a bump pad formed on the lower surface thereof. The light transmitting member covers the side surfaces and the upper surface of the light emitting diode chip, and the upper surface of the light transmitting member has a rectangular shape having long sides and short sides. The conductive adhesive member is formed to extend through the white barrier member from the bottom of the light emitting diode chip. The upper surface of the conductive adhesive member is connected to the bump pad of the light emitting diode chip, and the lower surface of the conductive adhesive member is exposed at the lower surface of the white barrier member.