A vertical gate all around (VGAA) nanowire device circuit routing structure is disclosed. The circuit routing structure comprises a plurality of VGAA nanowire devices including a NMOS and a PMOS device. The devices are formed on a semiconductor-on-insulator substrate. Each device comprises a bottom plate and a top plate wherein one of the bottom and top plates serves as a drain node and the other serves as a source node. Each device further comprises a gate layer. The gate layer fully surrounds a vertical channel in the device. In one example, a CMOS circuit is formed with an oxide (OD) block layer that serves as a common bottom plate for the NMOS and PMOS devices. In another example, a CMOS circuit is formed with a top plate that serves as a common top plate for the NMOS device and the PMOS devices. In another example, a SRAM circuit is formed.

An integrated circuit structure includes a plurality of power or ground rails for an integrated circuit, the plurality of power or ground rails vertically separated on a plane, a plurality of functional cells between the plurality of power rails or between the plurality of ground rails or both, and a jumper connection between the vertically separated power rails or ground rails, the jumper connection within a vertically aligned gap among the plurality of functional cells. A method of mitigating IR drop and electromigration affects in an integrated circuit includes forming a plurality of power rails or ground rails, each of the power rails or ground rails on separate vertical levels of a plane of an integrated circuit layout and connecting with a jumper connection at least two power rails or two ground rails, the jumper connection within a vertically aligned gap among cells of the integrated circuit.

A semiconductor device employs surrounding gate transistors (SGTs) which are vertical transistors to constitute a CMOS NOR circuit. The NOR circuit is formed by using a plurality of MOS transistors arranged in m rows and n columns. The MOS transistors constituting the NOR circuit are formed on a planar silicon layer disposed on a substrate, and each have a structure in which a drain, a gate, and a source are arranged in a vertical direction, the gate surrounding a silicon pillar. The planar silicon layer includes a first active region having a first conductivity type and a second active region having a second conductivity type. The first active region and the second active region are connected to one another via a silicon layer formed on a surface of the planar silicon layer. This provides for a semiconductor device that constitutes a NOR circuit.

According to one embodiment, a semiconductor memory 100 includes a memory cell array 100A composed of a plurality of SRAM cells 10 including NMOS transistors and PMOS transistors, and a bias circuit 100B connected to a ground GND1 or power supply voltage VDD1 of the memory cell array 100A. The bias circuit 100B includes NMOS transistors 121, 122, 133 and 134 that are same as the NMOS transistors of the SRAM cells 10 in terms of channel length and channel width and in terms of dopant and dose amount at a channel portion, and PMOS transistors 111 and 112 that are same as the PMOS transistors of the SRAM cells 10 in terms of channel length and channel width and in terms of dopant and dose amount at a channel portion. Diffusion regions of the NMOS transistors and the PMOS transistors are formed in a same semiconductor layer.

An edge detector includes a differential signal generator, a sense amplifier and a latch. The differential signal generator delays an input signal to generate a first differential signal and inverts the input signal to generate a second differential signal. The sense amplifier amplifies a difference between the first differential signal and the second differential signal to generate a first amplification signal and a second amplification signal at a first edge of a test clock signal and resets the first amplification signal and the second amplification signal at a second edge of the test clock signal. The latch generates an edge signal corresponding to edge information of the input signal in response to the first amplification signal and the second amplification signal.

Aspects of the disclosure include an integrated circuit that includes a plurality of functional circuit cells and a plurality of inactive spare functional circuit cells. Ones of the functional circuit cells respectively includes a set of first electrically interconnected transistors that define a first logic component and a first power rail configured to carry a first supply voltage. Ones of the inactive spare functional circuit cells respectively includes a set of second electrically interconnected transistors configured to define a second logic component and a second power rail configured to carry the first supply voltage. The set of electrically interconnected transistors is interconnected through a second set of conductive lines formed in the first conductive layer. The set of second electrically interconnected transistors is electrically disconnected from the second power rail.

According to one embodiment, a semiconductor memory 100 includes a memory cell array 100A composed of a plurality of SRAM cells 10 including NMOS transistors and PMOS transistors, and a bias circuit 100B connected to a ground GND1 or power supply voltage VDD1 of the memory cell array 100A. The bias circuit 100B includes NMOS transistors 121, 122, 133 and 134 that are same as the NMOS transistors of the SRAM cells 10 in terms of channel length and channel width and in terms of dopant and dose amount at a channel portion, and PMOS transistors 111 and 112 that are same as the PMOS transistors of the SRAM cells 10 in terms of channel length and channel width and in terms of dopant and dose amount at a channel portion. Diffusion regions of the NMOS transistors and the PMOS transistors are formed in a same semiconductor layer.

Embodiments of the invention relate to a metal configurable hybrid memory for use in integrated circuit designs for implementation in structured ASIC or similar platforms utilizing a base cell or standard cell. In accordance with certain aspects, a hybrid memory according to embodiments of the invention utilizes a fixed custom memory core and a customizable peripheral set of base cells. In accordance with these and further aspects, the hybrid memory can be specified using a macro, in which certain memory features (e.g. ECC, etc.) are implemented using the customizable peripheral set of base cells, and which may be selected or omitted from the design by the user. This enables the overall logic use for the memory to be optimized for a user's particular design. Unused logic in the customizable peripheral set of base cells can thus be freed for top-level logic use, thereby optimizing the design according to a user's functional and dimensional requirements and minimizing unnecessary waste of silicon area and power.

A semiconductor device includes: a virtual power line extended in a first direction; an n-well extended in the first direction, wherein the virtual power line and the n-well are disposed in a row; a first power gate switch cell disposed in the n-well; a second power gate switch cell disposed in the n-well, wherein the first and second power gate switch cells are first type cells; and a third power gate switch cell disposed in the n-well between the first and second power gate switch cells, wherein the third power gate switch cell is a second type cell different from the first type cells.

A semiconductor device includes a substrate including a first active region and a second active region, the first active region having a conductivity type that is different than a conductivity type of the second active region, and the first active region being spaced apart from the second active region in a first direction, gate electrodes extending in the first direction, the gate electrodes intersecting the first active region and the second active region, a first shallow isolation pattern disposed in an upper portion of the first active region, the first shallow isolation pattern extending in the first direction, and a deep isolation pattern disposed in an upper portion of the second active region, the deep isolation pattern extending in the first direction, and the deep isolation pattern dividing the second active region into a first region and a second region.