A method for fabricating a single pixel micro LED device for a display panel includes providing a substrate having a pixel driver and fabricating an LED structure layer stacked on top of the substrate. The method further includes bonding the substrate and the LED structure layer together by a bonding layer. The LED structure layer is electrically connected to the pixel driver via the bonding layer. In some embodiments, before bonding the substrate and the LED structure layer, the method includes coating a reflection layer on the LED structure layer. In some embodiments, the method includes patterning the LED structure layer to form a red light LED.

A metallic structure for an optical semiconductor device, including a base body having disposed thereon at least in part metallic layers in the following order; a nickel or nickel alloy plated layer, a gold or gold alloy plated layer, and a silver or silver alloy plated layer, wherein the silver or silver alloy plated layer has a thickness in a range of 0.001 m or more and 0.01 m or less.

A light emitting plate, a wiring plate and a display device are provided. The light emitting plate includes light emitting units. Each light emitting unit includes a light emitting sub-unit including a connection line unit and a light emitting diode chip connected with the connection line unit. The connection line unit includes electrical contact pairs, and each electrical contact pairs includes a first electrode contact and a second electrode contact; in each connection line unit, the second electrode contacts are electrically connected with each other, the first electrode contacts are electrically connected with each other, and only one electrical contact pairs in each connection line unit is connected with the light emitting diode chip; in each connection line unit, at least two first electrode contacts are arranged adjacent to each other, and at least two first electrode contacts are arranged between at least two second electrode contacts.

A light emitting diode, including a first type semiconductor layer, an active layer, and a second type semiconductor layer; an ohmic contact layer disposed on the second type semiconductor layer; a first insulating layer disposed on the semiconductor structure and including a first opening overlapping the first type semiconductor layer and a second opening overlapping the ohmic contact layer; a first connection wiring disposed on the first insulating layer, the first connection wiring having a first portion and a second portion; and a second connection wiring disposed on the first insulating layer and spaced apart from the first connection wiring, the second connection wiring electrically connected to the second type semiconductor layer through the second opening. The second connection wiring surrounds at least a portion of the first portion of the first connection wiring in a plan view.

In an embodiment a method for producing an optoelectronic assembly includes providing at least one component of the optoelectronic assembly, providing a source carrier with a functional material on a lower face of the source carrier facing the at least one component, detaching a part of the functional material by irradiation via a laser beam through an upper face of the source carrier facing away from the at least one component, attaching the detached part of the functional material to a side of the at least one component facing the source carrier and completing the optoelectronic assembly, wherein the source carrier comprises cavities, each cavity being filled with the functional material.

A chip structure is provided. The chip structure includes: a chip wafer unit and a color conversion layer unit arranged on a light-exit side of the chip wafer unit. The chip wafer unit includes a plurality of sub-pixel light-emitting function layers. The color conversion layer unit includes color conversion layers arranged on the light-exit side of the chip wafer unit. The chip structure further includes: an attaching layer, arranged between the chip wafer unit and the color conversion layer unit and configured to attach the chip wafer unit and the color conversion layer unit.

Provided is a display substrate. The display substrate includes a base substrate, a plurality of conductive pads, a first organic insulating layer, and a first inorganic insulating layer. The first organic insulating layer is disposed on the base substrate provided with the conductive pads and provided with a first opening corresponding to at least one conductive pad, and the first inorganic insulating layer is disposed on a side of the first organic insulating layer facing away from the base substrate and provided with a plurality of second openings corresponding to the plurality of conductive pads. An orthographic projection of at least one conductive pad on the base substrate is within an orthographic projection of the corresponding first opening on the base substrate, and an orthographic projection of the second opening on the base substrate is within the orthographic projection of the corresponding conductive pad on the base substrate.

The manufacturing method of the display device according to the embodiment includes a step of self-aligning the light emitting device inside the opening of the planarization layer overlapping the first assembly wiring and the second assembly wiring, a step of sequentially forming a conductive layer and an organic layer on a planarization layer and a light emitting device, a step of ashing the organic layer to remove the second part on the first part of the organic layer, and a step of forming a contact electrode by etching the conductive layer corresponding to the second part, wherein the contact electrode is in contact with the side of the first semiconductor layer below the light emitting device.

A light-emitting device includes a first lead electrode and a second lead electrode, and a resin frame that covers an outer portion and a separation portion of the lead electrodes and has an opening portion that exposes the lead electrodes, and an LED. A protrusion provided in the first lead electrode is fitted into an enclosing portion provided in the second lead electrode to form a nested structure. Hollowed portions are provided in facing adjacent sides of the protrusion and the enclosing portion, and a region surrounded by the hollowed portion and the hollowed portion is filled with a part of a resin, thereby forming an anchor column.

There is provided a light emitting device (10) including a plurality of pixels (20) arranged on a substrate, in which a pixel of the plurality of pixels includes a plurality of subpixels (100), at least one subpixel of the plurality of subpixels includes a plurality of light emitting elements (200), each light emitting element includes: a first electrode (202) provided on the substrate (300); a light emitting layer (204) that is laminated on the first electrode and emits light; a second electrode (206) that is laminated on the light emitting layer and transmits light from the light emitting layer; and a first protective film (208) that is laminated on the second electrode and transmits light from the light emitting layer, and a second protective film (210) constituting an interface for guiding the light immediately above the light emitting element is embedded between the light emitting elements adjacent.