A solid state imaging device includes: a pixel array unit that has a plurality of pixels 2-dimensionally arranged in a matrix and a plurality of signal lines arranged along a column direction; A/D conversion units that are provided corresponding to the respective signal lines and convert an analog signal output from a pixel through the signal line into a digital signal; and a switching unit that switches or converts the analog signal output through each signal line into a digital signal using any of an A/D conversion unit provided corresponding to the signal line through which the analog signal is transmitted, and an A/D conversion unit provided corresponding to a signal line other than the signal line through which the analog signal is transmitted.

A solid-state imaging device includes pixels each having a photoelectric conversion element for converting incident light to an electric signal, color filters associated with the pixels and having a plurality of color filter components, microlenses converging the incident light through the color filters to the photoelectric conversion elements, a light shielding film disposed between the color filter components of the color filters, and a nonplanarized adhesive film provided between the color filters and the light shielding film.

An infrared high-pass plasmonic filter includes a copper layer interposed between two layers of a dielectric material. An array of patterned openings extend through the copper layer and are filled with the dielectric material. Each patterned opening is in the shape of a greek cross, with the arms of adjacent patterns being collinear. A ratio of the width to the length of each arm is in the range from 0.3 to 0.6, and the distance separating the opposite ends of arms of adjacent patterns is shorter than 10 nm.

There is provided a solid-state imaging device including a substrate having a surface over which a plurality of photodiodes are formed, and a protection film that is transparent, has a water-proofing property, and includes a side wall part vertical to the surface of the substrate and a ceiling part covering a region surrounded by the side wall part, the side wall part and the ceiling part surrounding a region where the plurality of photodiodes are arranged over the substrate.

In some embodiments, the present disclosure relates to a back-side image (BSI) sensor having a global shutter pixel with a reflective material that prevents contamination of a pixel-level memory node. In some embodiments, the BSI image sensor has an image sensing element arranged within a semiconductor substrate and a pixel-level memory node arranged within the semiconductor substrate at a location laterally offset from the image sensing element. A reflective material is also arranged within the semiconductor substrate at a location between the pixel-level memory node and a back-side of the semiconductor substrate. The reflective material has an aperture that overlies the image sensing element. The reflective material allows incident radiation to reach the image sensing element while preventing the incident radiation from reaching the pixel-level memory node, thereby preventing contamination of the pixel-level memory node.

An image sensor may include a plurality of pixels that each contain a photodiode. The pixels may include deep photodiodes for near infrared applications. The photodiodes may be formed by growing doped epitaxial silicon in trenches formed in a substrate. The doped epitaxial silicon may be doped with phosphorus or arsenic. The pixel may include additional n-wells formed by implanting ions in the substrate. Isolation regions formed by implanting boron ions may isolate the n-wells and doped epitaxial silicon. The doped epitaxial silicon may be formed at temperatures between 500 C. and 550 C. After forming the doped epitaxial silicon, laser annealing may be used to activate the ions. Chemical mechanical planarization may also be performed to ensure that the doped epitaxial silicon has a flat and planar surface for subsequent processing.

A frontside illuminated (FSI) image sensor with a reflector is provided. A photodetector is buried in a sensor substrate. A support substrate is arranged under and bonded to the sensor substrate. The reflector is arranged under the photodetector, between the sensor and support substrates, and is configured to reflect incident radiation towards the photodetector. A method for manufacturing the FSI image sensor and the reflector is also provided.

A solid-state imaging apparatus, comprising a first semiconductor region of a first conductivity type provided on a substrate by an epitaxial growth method, a second semiconductor region of the first conductivity type provided on the first semiconductor region, and a third semiconductor region of a second conductivity type provided in the second semiconductor region so as to form a pn junction with the second semiconductor region, wherein the first semiconductor region is formed such that an impurity concentration decreases from a side of the substrate to a side of the third semiconductor region, and an impurity concentration distribution in the second semiconductor region is formed by an ion implantation method.

A solid-state imaging device having a backside illuminated structure, includes: a pixel region in which pixels each having a photoelectric conversion portion and a plurality of pixel transistors are arranged in a two-dimensional matrix; an element isolation region isolating the pixels which is provided in the pixel region and which includes a semiconductor layer provided in a trench by an epitaxial growth; and a light receiving surface at a rear surface side of a semiconductor substrate which is opposite to a multilayer wiring layer.

A solid-state imaging device includes a plurality of photoelectric conversion portions each provided to correspond to each of a plurality of pixels in a semiconductor substrate and receiving incident light through a light sensing surface, and a pixel separation portion that is embedded into a trench provided on a side portion of the photoelectric conversion portion and electrically separates the plurality of pixels in a side of an incident surface of the semiconductor substrate into which the incident light enters. The pixel separation portion is formed by an insulation material which absorbs the incident light entering the light sensing surface.