Embodiments of this application disclose a camera module and an electronic device. The camera module includes a color filter layer. The color filter layer includes an electrochromic region and a plurality of color filter regions. Each color filter region is used for transmitting a spectrum of a band corresponding to the color filter region. The electrochromic region has a fully light-transmissive state and a filter state. In the fully light-transmissive state, the electrochromic region is used for transmitting spectra of a plurality of different bands. In the filter state, the electrochromic region is used for transmitting spectra of a same band.

This application provides a pixel structure, an image sensor chip, and an electronic device. The pixel structure includes a splitter and a photodiode. The photodiode includes a light-receiving surface, the light-receiving surface includes a plurality of light-receiving regions, and the splitter faces the light-receiving surface. The splitter includes a first optical layer and a second optical layer stacked, the first optical layer includes a first light-transmitting region and a second light-transmitting region, and the second optical layer includes a third light-transmitting region and a fourth light-transmitting region. Transmissivity of the first light-transmitting region and transmissivity of the second light-transmitting region are different, and transmissivity of the third light-transmitting region and transmissivity of the fourth light-transmitting region are different. A projection of the first light-transmitting region and a projection of the third light-transmitting region do not overlap in a direction perpendicular to the first optical layer.

A solid-state imaging element including a lens array in which micro lenses are formed in an alignment, a flattening layer formed on the lens array, and a diffraction grating part including a thermosetting resin, has diffraction gratings, and is provided on the flattening layer. A solid-state imaging element including a lens array in which micro lenses are in an alignment, a flattening layer formed on the lens array, and a diffraction grating part including a base that covers the entire upper surface of the flattening layer, and diffraction gratings provided so as to protrude from the base.

An image capture device includes a plurality of independently formed camera channels. Each of the plurality of independently formed camera channels includes a respective sensor, wherein the respective sensor includes circuitry that controls an integration time of the respective sensor, and a respective lens that receives incident light and transmits the incident light to the respective sensor without transmitting the incident light to respective sensor of other camera channels within the plurality of independently formed camera channels. Further, a processor that is communicatively coupled to the respective sensor of each of the plurality of independently formed camera channels. The processor is configured to receive respective images from the respective sensor of each of the plurality of independently formed camera channels, and form a combined image by combing each of the respective images.

The present disclosure relates to a solid-state imaging device, a method for driving the solid-state imaging device, and an electronic device capable of improving auto-focusing accuracy by using a phase difference signal obtained by using a photoelectric conversion film. The solid-state imaging device includes a pixel including a photoelectric conversion portion having a structure where a photoelectric conversion film is interposed by an upper electrode on the photoelectric conversion film and a lower electrode under the photoelectric conversion film. The upper electrode is divided into a first upper electrode and a second upper electrode. The present disclosure can be applied to, for example, a solid-state imaging device or the like.

A solid-state imaging device includes a second image sensor having an organic photoelectric conversion film transmitting a specific light, and a first image sensor which is stacked in layers on a same semiconductor substrate as that of the second image sensor and which receives the specific light having transmitted the second image sensor, in which a pixel for focus detection is provided in the second image sensor or the first image sensor. Therefore, an AF method can be realized independently of a pixel for imaging.

An image sensor includes: a first pixel having a first photoelectric conversion unit that photoelectrically converts light having entered therein, and a first light blocking unit that blocks a part of light about to enter the first photoelectric conversion unit; and a second pixel having a second photoelectric conversion unit that photoelectrically converts light having entered therein and a second light blocking unit that blocks a part of light about to enter the second photoelectric conversion unit, wherein: the first photoelectric conversion unit and the first light blocking unit are set apart from each other by a distance different from a distance setting apart the second photoelectric conversion unit and the second light blocking unit.

The present technology relates to a solid-state imaging device and an electronic apparatus capable of improving the accuracy of phase difference detection while suppressing degradation of a picked-up image. There is provided a solid-state imaging device including: a pixel array unit, a plurality of pixels being two-dimensionally arranged in the pixel array unit, a plurality of photoelectric conversion devices being formed with respect to one on-chip lens in each of the plurality of pixels, a part of at least one of an inter-pixel separation unit formed between the plurality of pixels and an inter-pixel light blocking unit formed between the plurality of pixels protruding toward a center of the corresponding pixel in a projecting shape to form a projection portion. The present technology is applicable to, for example, a CMOS image sensor including a pixel for detecting the phase difference.

An image sensor includes: a substrate including a first side and a second side facing the first side; pixels including a photoelectric conversion layer in the substrate and a transistor on the first side of the substrate; and a pixel separating pattern between the pixels, wherein the pixel separating pattern includes a first separating pattern, a second separating pattern, and a third separating pattern, the second separating pattern is conductive, and the first separating pattern and the third separating pattern are non-conductive, the second separating pattern is nearer the first side of the substrate than is the third separating pattern, and a first end of the first separating pattern, a first end of the second separating pattern, and a first end of the third separating pattern are on the second side of the substrate.

An imaging device in which noise can be reduced, and an electronic device using this device. The imaging device includes a light receiving element, and a read circuit. A field effect transistor in the read circuit has a semiconductor layer in which a channel is formed, a gate electrode that covers the semiconductor layer, and a gate insulating film disposed between the semiconductor layer and the gate electrode. The semiconductor layer has a main surface, and a first side surface on one end side of the main surface in a gate width direction of the field effect transistor. The gate electrode has a first portion that faces the main surface via the gate insulating film, and a second portion that faces the first side surface via the gate insulating film. A crystal plane of the first side surface is a plane or a plane equivalent to the plane.