A camera module and an array camera module based on an integral packing process are disclosed. The camera module or each of the camera module units of the array camera module includes a circuit board, an integral base, a photosensitive element operatively connected to the circuit board, a lens, a light filter holder installed at the integral base and a light filter installed at the light filter holder. The light filter is not required to be directly installed to the integral base, so that the light filter is protected and the requiring area of the light filter is reduced.

BSI image sensors and methods. In an embodiment, a substrate is provided having a sensor array and a periphery region and having a front side and a back side surface; a bottom anti-reflective coating (BARC) is formed over the back side to a first thickness, over the sensor array region and the periphery region; forming a first dielectric layer over the BARC; a metal shield is formed; selectively removing the metal shield from over the sensor array region; selectively removing the first dielectric layer from over the sensor array region, wherein a portion of the first thickness of the BARC is also removed and a remainder of the first thickness of the BARC remains during the process of selectively removing the first dielectric layer; forming a second dielectric layer over the remainder of the BARC and over the metal shield; and forming a passivation layer over the second dielectric layer.

Provided is a solid-state imaging device including: a pixel section configured to include a plurality of pixels arranged in a matrix form, the plurality of pixels performing photoelectric conversion; column signal lines configured to transmit pixel signals output from the pixels in units of columns; an AD converting section configured to include a comparator that compares a reference signal serving as a ramp wave with the pixel signals transmitted via the column signal line and convert a reference level and a signal level of the pixel signals into digital signals independently based on a comparison result of the comparator; a switch configured to be connected with the column signal lines; and a control section configured to turn on the switch only during a certain period of time in a period of time in which the comparator is reset and cause the column signal lines to be short-circuited.

An imaging device which does not include a color filter and does not need arithmetic processing using an external processing circuit is provided. A first circuit includes a first photoelectric conversion element, a first transistor, and a second transistor; a second circuit includes a second photoelectric conversion element, a third transistor, and a fourth transistor; a third circuit includes a fifth transistor, a sixth transistor, a seventh transistor, and a second capacitor; the spectroscopic element is provided over the first photoelectric conversion element or the second photoelectric conversion element; and the first circuit and the second circuit is connected to the third circuit through a first capacitor.

An image sensor includes a plurality of photoelectric detectors, a plurality of color filters, and at least one pixel isolation region between adjacent ones of the photoelectric detectors. The color filters include a white color filter, and the color filters correspond to respective ones of the photoelectric detectors. The at least one pixel isolation region serves to physically and at least partially optically separate the photoelectric detectors from one another.

A sensor includes a plurality of image sensors, wherein each image sensor of the plurality of image sensors is configured to detect a first spectrum of light. The sensor further includes a depth sensing pixel bonded to each image sensor of the plurality of image sensors, wherein the depth sensing pixel is configured to detect a second spectrum of light different from the first spectrum.

Provided is an image sensor having improved performance. An image sensor in accordance with an embodiment of the present invention including a pixel array in which a plurality of pixels are two-dimensionally arranged, wherein each of the plurality of pixels may include: a photoelectric conversion element formed in a substrate; a transfer gate overlapping with a portion of the photoelectric conversion element and formed on the substrate; and a color filter over the photoelectric conversion element, wherein the plurality of pixels include two adjacent pixels which have the same color filter, and wherein one of the two adjacent pixels comprises an incident light control pattern.

An improvement is achieved in the performance of a semiconductor device. A semiconductor device includes an n.sup.-type semiconductor region formed in a p-type well, an n-type semiconductor region formed closer to a main surface of a semiconductor substrate than the n.sup.-type semiconductor region, and a p.sup.-type semiconductor region formed between the n.sup.-type semiconductor region and the n-type semiconductor region. A net impurity concentration in the n.sup.-type semiconductor region is lower than a net impurity concentration in the n-type semiconductor region. A net impurity concentration in the p.sup.-type semiconductor region is lower than a net impurity concentration in the p-type well.

An image sensor includes a sensing layer, filter units, and a grid structure. The filter units are disposed on the sensing layer. The grid structure is disposed on the filter units, and includes grating portions. The grating portions form a number of grating groups, and each of the grating groups is separated from each other.

The present technique relates to a solid-state imaging device and an imaging apparatus that enable provision of a solid-state imaging device having superior color separation and high sensitivity.

The solid-state imaging device includes a semiconductor layer 11 in which a surface side becomes a circuit formation surface, photoelectric conversion units PD1 and PD2 of two layers or more that are stacked and formed in the semiconductor layer 11, and a longitudinal transistor Tr1 in which a gate electrode 21 is formed to be embedded in the semiconductor layer 11 from a surface 15 of the semiconductor layer 11. The photoelectric conversion unit PD1 of one layer in the photoelectric conversion units of the two layers or more is formed over a portion 21A of the gate electrode 21 of the longitudinal transistor Tr1 embedded in the semiconductor substrate 11 and is connected to a channel formed by the longitudinal transistor Tr1.