According to an aspect, a detection device includes: an insulating substrate; a plurality of photoelectric conversion elements that are arranged in a detection area of the insulating substrate, and each of which is configured to receive light and output a signal corresponding to the received light; a first switching element that is provided for each photoelectric conversion element and includes a first semiconductor, a source electrode, and a drain electrode; and an inorganic insulating layer provided between the photoelectric conversion element and the first switching element in a normal direction of the insulating substrate.

A photoelectric conversion panel includes a TFT, a photodiode, a first organic film formed on an upper layer from the photodiode, a bias line formed on an upper layer from the first organic film, a data line separated from the bias line, a second organic film covering the first organic film, the bias line, and the data line, and a first inorganic insulating film. Part of the second organic film is disposed between the bias line and the data line. The first inorganic insulating film covers the second organic film.

An image sensor is provided and may include a semiconductor substrate having a surface and including trench, the trench extending from the surface into the semiconductor substrate, an insulating pattern provided in the trench; and a doped region in the semiconductor substrate and on the insulating patterns. The doped region includes a side portion on a side surface of the insulating pattern, and a bottom portion on a bottom surface of the insulating pattern. A thickness of the side portion of the doped region is from 85% to 115% of a thickness of the bottom portion of the doped region, and a number of dopants per unit area in the side portion of the doped region is from 85% to 115% of a number of dopants per unit area in the bottom portion.

Depositing gallium nitride and carbon (GaN:C) (e.g., in the form of composite layers) when forming a gallium nitride drain of a transistor provides a buffer between the gallium nitride of the drain and silicon of a substrate in which the drain is formed. As a result, gaps and other defects caused by lattice mismatch are reduced, which improves electrical performance of the drain. Additionally, current leakage into the substrate is reduced, which further improves electrical performance of the drain. Additionally, or alternatively, implanting silicon in an aluminum nitride (AlN) liner for a gallium nitride drain reduces contact resistance at an interface between the gallium nitride and the silicon. As a result, electrical performance of the transistor is improved.

A pixel circuit including a transistor, a blocking layer and an output circuit is disclosed. The transistor includes a first doped region and a second doped region disposed on opposite sides of a channel of the transistor proximate to a first surface of a semiconductor substrate such that photo-carriers generated inside the semiconductor substrate in response to incident light flow into one region of the first and second doped regions. The blocking layer is disposed between the other region of the first and second doped regions and a second surface of the semiconductor substrate opposite to the first surface. The blocking layer configured to block the photo-carriers from flowing into the other region of the first doped region and the second doped region directly. The output circuit outputs an image signal according to a voltage signal outputted from the transistor.

To provide a semiconductor device which has transistor characteristics with little variation and includes an oxide semiconductor. The semiconductor device includes an insulating film over a conductive film and an oxide semiconductor film over the insulating film. The oxide semiconductor film includes a first oxide semiconductor layer, a second oxide semiconductor layer over the first oxide semiconductor layer, and a third oxide semiconductor layer over the second oxide semiconductor layer. The energy level of a bottom of a conduction band of the second oxide semiconductor layer is lower than those of the first and third oxide semiconductor layers. An end portion of the second oxide semiconductor layer is positioned on an inner side than an end portion of the first oxide semiconductor layer.

High field-effect mobility is provided for a transistor including an oxide semiconductor. Further, a highly reliable semiconductor device including the transistor is provided. In a bottom-gate transistor including an oxide semiconductor layer, an oxide semiconductor layer functioning as a current path (channel) of the transistor is sandwiched between oxide semiconductor layers having lower carrier densities than the oxide semiconductor layer. In such a structure, the channel is formed away from the interface of the oxide semiconductor stacked layer with an insulating layer in contact with the oxide semiconductor stacked layer, i.e., a buried channel is formed.

An imaging device with low power consumption is provided. The pixel of the imaging device includes first and second photoelectric conversion elements, and first to fifth transistors. A cathode of the first photoelectric conversion element is electrically connected to the first transistor. An anode of a second photoelectric conversion element is electrically connected to the second transistor. Imaging data of a reference frame is obtained using the first photoelectric conversion element, and then imaging data of a difference detection frame is obtained using the second photoelectric conversion element. After the imaging data of the difference detection frame is obtained, a first potential that is a potential of a signal output from the pixel and a second potential that is a reference potential are compared. Whether or not there is a difference between the imaging data of the reference frame and the imaging data of the difference detection frame is determined using the first potential and the second potential.

Two gate electrodes are provided on upper and lower sides of an oxide semiconductor active layer through respective insulating films. In addition, a first read-out electrode and a second read-out electrode are provided on right and left sides of the oxide semiconductor active layer. In the optical sensor element, in a case where a voltage is applied to each gate electrode, a potential difference occurs between the first read-out electrode and the second read-out electrode, and intensity of irradiation light is detected based on a current that flows between the read-out electrodes.

An electronic device includes a substrate, a silicon semiconductor disposed on the substrate, an oxide semiconductor disposed on the substrate, a sensor configured to receive a light and output a signal, and a light-shielding element including a conductive material and disposed between the sensor and the oxide semiconductor. The oxide semiconductor is electrically connected to the silicon semiconductor. The silicon semiconductor and the oxide semiconductor are active corresponding to the signal.