An imaging device including: pixel cells each comprising: a photoelectric converter including two electrodes and a photoelectric conversion layer therebetween; a field effect transistor having a gate and a channel region; and a node between the photoelectric converter and the field effect transistor. The field effect transistor outputs an electric signal corresponding to change in dielectric constant between the electrodes, the change being caused by incident light on the photoelectric conversion layer. Cpd1, Cn1, Cpd2 and Cn2 satisfy a relation of Cpd1/Cn1<Cpd2/Cn2 where a capacitance value of a first photoelectric converter in a state of receiving no incident light is Cpd1, a capacitance value between a first node and a first channel region is Cn1, a capacitance value of a second photoelectric converter in a state of receiving no incident light is Cpd2, and a capacitance value between a second node and a second channel region is Cn2.

An image sensor is provided which is capable of holding data for one frame period or longer and conducting a difference operation with a small number of elements. A photosensor is provided in each of a plurality of pixels arranged in a matrix, each pixel accumulates electric charge in a data holding portion for one frame period or longer, and an output of the photosensor changes in accordance with the electric charge accumulated in the data holding portion. As a writing switch element for the data holding portion, a transistor with small leakage current (sufficiently smaller than 110.sup.14 A) is used. As an example of the transistor with small leakage current, there is a transistor having a channel formed in an oxide semiconductor layer.

A pixel of a distance sensor includes a photosensor that generates photocharges corresponding to light incident in a first direction. The photosensor includes a plurality of first layers having a cross-sectional area increasing along the first direction after a first depth and at least one transfer gate which receives a transfer control signal for transferring the photocharges to a floating diffusion node. A strong electric field is formed in the direction in which the photocharges move horizontally or vertically in the pixel, thereby accelerating the photocharges, allowing for increased sensitivity and demodulation contrast.

Provided is a complementary metal-oxide-semiconductor (CMOS) image sensor. The CMOS image sensor can include a substrate having a first device isolation layer defining and dividing a first active region and a second active region, a photodiode disposed in the substrate and can be configured to vertically overlap the first device isolation layer, a transfer gate electrode can be disposed in the first active region and can be configured to vertically overlap the photodiode, and a floating diffusion region can be in the first active region. The transfer gate electrode can be buried in the substrate.

A device including a gate structure formed over a semiconductor substrate, the gate structure having extensions, a device isolation structure formed into the semiconductor substrate adjacent the gate structure, wherein the extensions are over a portion of the device isolation structure, and source/drain regions on both sides of the gate structure, the source/drain regions being formed in a gap in the device isolation structure and being partially enclosed by the extensions of the gate structure.

A driving method of a semiconductor device that takes three-dimensional images with short duration is provided. In a first step, a light source starts to emit light, and first potential corresponding to the total amount of light received by a first photoelectric conversion element and a second photoelectric conversion element is written to a first charge accumulation region. In a second step, the light source stops emitting light and second potential corresponding to the total amount of light received by the first photoelectric conversion element and the second photoelectric conversion element is written to a second charge accumulation region. In a third step, first data corresponding to the potential written to the first charge accumulation region is read. In a fourth step, second data corresponding to the potential written to the second charge accumulation region is read.

An image sensor is operated for shutter modulation and high dynamic range, suitable for use with a local lamp. In one example, charge is collected at a photodetector of a photodetector circuit for a first duration for a first mini-exposure. The photodetector charge is transferred to a charge collection node of the photodetector circuit. A portion of the transferred charge is spilled from the charge collection node. Charge is collected at the photodetector for a second duration for a second mini-exposure. The second mini-exposure photodetector charge is transferred to the charge collection node after spilling the portion. The collected charge is read after transferring the second mini-exposure photodetector charge and the spilled portion of the charge is estimated and the spilled portion is added to the collected charge reading to obtain a total charge value for the combined exposures.

A solid-state imaging device includes a pixel region in which shared pixels which share pixel transistors in a plurality of photoelectric conversion portions are two-dimensionally arranged. The shared pixel transistors are divisionally arranged in a column direction of the shared pixels, the pixel transistors shared between neighboring shared pixels are arranged so as to be horizontally reversed or/and vertically crossed, and connection wirings connected to a floating diffusion portion, a source of a reset transistor and a gate of an amplification transistor in the shared pixels are arranged along the column direction.

An image sensor includes a substrate having adjacent pixel regions and respective photodiode regions therein, and a pixel separation portion including a trench extending into the substrate between the adjacent pixel regions. The trench includes a conductive common bias line therein and an insulating device isolation layer between the common bias line and surfaces of the trench. A conductive interconnection is coupled to the common bias line and is configured to provide a negative voltage thereto. Related fabrication methods are also discussed.

Provided is a semiconductor device with improved performance. In a method for manufacturing a semiconductor device, after forming a gate electrode of a transfer transistor over a p-type well, a photodiode is formed in one part of the p-type well positioned on one side with respect to the gate electrode. Then, a cap insulating film including silicon and nitrogen is formed over the photodiode before implanting impurity ions for formation of an n-type low-concentration semiconductor region of the transfer transistor, into the other part of the p-type well positioned on a side opposite to the one side with respect to the gate electrode.