The present disclosure provides a semiconductor structure, including a first semiconductor device having a first surface and a second surface, the second surface being opposite to the first surface, a semiconductor substrate over the first surface of the first semiconductor device, and a III-V etch stop layer in contact with the second surface of the first semiconductor device. The present disclosure also provides a manufacturing method of a semiconductor structure, including providing a temporary substrate having a first surface, forming a III-V etch stop layer over the first surface, forming a first semiconductor device over the etch stop layer, and removing the temporary substrate by an etching operation and exposing a surface of the III-V etch stop layer.

A fingerprint identification module, a method for manufacturing the fingerprint identification module, a display substrate and a display device are provided. The fingerprint identification module includes a TFT, a photosensitive sensor, and a connection electrode configured to connect the TFT to the photosensitive sensor; the TFT includes an active layer; the active layer and the connection electrode are formed through a same semiconductor layer pattern, the semiconductor layer pattern includes a first semiconductor pattern and a second semiconductor pattern, the first semiconductor pattern is used as the active layer, and the second semiconductor pattern is subjected to conductor-formation treatment and used as the connection electrode.

Various embodiments of the present disclosure are directed towards an image sensor. The image sensor includes a deep trench isolation (DTI) structure disposed in a substrate. A pixel region of the substrate is disposed within an inner perimeter of the DTI structure. A photodetector is disposed in the pixel region of the substrate. A gate electrode structure overlies, at least partially, the pixel region of the substrate. A first gate dielectric structure partially overlies the pixel region of the substrate. A second gate dielectric structure partially overlies the pixel region of the substrate. The gate electrode structure overlies both a portion of the first gate dielectric structure and a portion of the second gate dielectric structure. The first gate dielectric structure has a first thickness. The second gate dielectric structure has a second thickness that is greater than the first thickness.

The invention relates to an image sensor comprising a photodetector array including neighboring photodetector elements, each photodetector element comprising: a photodetector cell having a photodiode and a reset unit; a cell control unit coupled with the photodetector cell and configured to reset the photodiode by means of the reset unit; wherein the cell control unit is configured to asynchronously effect resetting of the photodiode after a given dead time after detection of a photon.

A detection device includes a substrate, a photodiode provided on the substrate, a lens provided so as to overlap the photodiode, a light-blocking layer that is provided between the photodiode and the lens, and is provided with an opening in a region overlapping the photodiode, and a light-transmitting resin layer and a buffer layer that are stacked between the light-blocking layer and the lens. The lens is provided in direct contact with a top of the buffer layer.

An imaging device capable of suppressing deterioration in electrical characteristics and improving layout efficiency is provided. The imaging device includes a semiconductor layer and a plurality of pixels provided in the semiconductor layer. Each of the plurality of pixels includes a photoelectric conversion unit, a floating diffusion that converts a charge generated by the photoelectric conversion unit into a voltage signal, and a transfer transistor that transfers the charge generated in the photoelectric conversion unit to the floating diffusion. In one pixel and the other pixel that are adjacent to each other among the plurality of pixels, one or more of the photoelectric conversion unit, the floating diffusion, and the transfer transistor are arranged non-linearly symmetrically and point-symmetrically.

According to an aspect, a detection device includes: a substrate; a photodiode that is provided on the substrate and in which a lower electrode, a lower buffer layer, an active layer, an upper buffer layer, and an upper electrode are stacked on the substrate in the order as listed; a signal line that is provided between the substrate and the photodiode in a direction orthogonal to the substrate and is electrically coupled to the lower electrode of the photodiode; a detection circuit electrically coupled to the photodiode via the signal line; and a shield layer that is provided between the signal line and the lower buffer layer in the direction orthogonal to the substrate and is configured to be supplied with a reference voltage.

An image sensor includes: a plurality of pixels each having a photoelectric conversion unit that converts incident light into an electric charge, the incident light being incident from one side of a substrate, and an output unit that outputs a signal caused by the electric charge, the plurality of pixels being arranged in a first direction and a second direction intersecting the first direction; and an accumulation unit provided to be stacked on the photoelectric conversion unit on a side opposite to the one side of the substrate, the accumulation unit accumulating the signal.

An image sensor includes a first substrate. A photoelectric conversion region is in the first substrate. A first interlayer insulating layer is on the first substrate. A transistor includes a bonding insulating layer on the first interlayer insulating layer, a semiconductor layer on the bonding insulating layer, and a first gate on the semiconductor layer. A bias pad is spaced apart from the semiconductor layer by the bonding insulating layer. The bias pad overlaps the first gate in a planar view. A second interlayer insulating layer covers the transistor.

A solid-state imaging device capable of preventing variation in bonding strength in a bonding plane between a first semiconductor substrate and a second semiconductor substrate is provided. The solid-state imaging device includes a first semiconductor substrate having a plurality of first conductors, and a second semiconductor substrate bonded to the first semiconductor substrate and having a plurality of second conductors In a bonding plane between the first and second semiconductor substrates, the device includes regions where the conductors overlap, regions where insulating films and the conductors overlap, and regions where the insulating films overlap. The proportion of areas where the first insulating films and the second insulating films are bonded together to the bonding area between the first semiconductor substrate and the second semiconductor substrate is constant before and after the first semiconductor substrate and the second semiconductor substrate are bonded together.