The present invention relates a photovoltaic module comprising 126, 138 or 150 back-contact half-cells. In an embodiment, the half-cells are divided into 3 groups of each 2 parallel strings with each string containing of the total number of half-cells. The module comprises an additional row of 6 back-contact half-cells, relative to known half-cell modules.

Provided are a back-contact solar cell, a method for preparing the same, and a photovoltaic module. The solar cell includes a substrate, a plurality of first doped sections and a plurality of second doped sections. The substrate has a first side, and the first side has two opposing first edges perpendicular to a first direction and two opposing second edges perpendicular a second direction, the first direction being perpendicular to the second direction. The plurality of first doped sections are formed on the first side, and each first doped section includes a first portion extending along the second direction and a plurality of second portions distributed at intervals along the second direction, where each second portion protrudes from the first portion in a direction parallel to the second edges.

The present disclosure relates to a solar cell and a solar cell panel including the same, and more particularly, to a solar cell with an improved structure and an improved manufacturing process and a solar cell panel including the same.

A method for soldering a solar cell, includes: placing a plurality of back contact cells on a soldering platform, where back surfaces of the back contact cells face away from the soldering platform, and electrodes corresponding to two adjacent back contact cells have opposite polarities in a connection direction of a plurality of ribbons which are to be connected; placing the plurality of ribbons on the electrodes of the plurality of back contact cells by using a first clamping portion, a second clamping portion, and a plurality of third clamping portions, where the first clamping portion, the second clamping portion, and the plurality of third clamping portions respectively correspond to head ends, tail ends, and middle portions of the plurality of ribbons; and heating the plurality of ribbons by using at least one heater to connect the plurality of ribbons to the plurality of back contact cells.

Provided are a back-contact solar cell, a method for preparing the same, and a photovoltaic module. The solar cell includes a substrate, a plurality of first doped sections and a plurality of second doped sections. The substrate has a first side, and the first side has two opposing first edges perpendicular to a first direction and two opposing second edges perpendicular a second direction, the first direction being perpendicular to the second direction. The plurality of first doped sections are formed on the first side, and each first doped section includes a first portion extending along the second direction and a plurality of second portions distributed at intervals along the second direction, where each second portion protrudes from the first portion in a direction parallel to the second edges.

A string of shingled solar cells is disclosed. The string of shingled solar cells has flexible joints connecting the solar cells made from cured liquid polymeric adhesive. An electrically conductive interconnect passes through the flexible joint. The string of shingled solar cells also has interconnect reinforcements made from cured liquid polymeric adhesive to improve interconnect adhesion to the front surface of the solar cells.

A string of solar cells interconnected by metal wires. The bonded metal interconnect wires having a cross-sectional area with a head and shoulder shape or with a curved dome shape. An apparatus for manufacturing a string of solar cells. The apparatus bonds metal interconnect wires to solar cells and results in wires having a cross-sectional area with a head and shoulder shape or with a curved dome shape.

A solar cell is provided, including: a substrate including a center region and edge regions respectively arranged on two opposing sides of the center region, fingers arranged at intervals along the first direction and extending along a second direction, pad groups arranged at intervals along the second direction, and busbars arranged at intervals along the second direction. The fingers including a number of fingers in the center region, each pad group includes pads arranged at intervals along the first direction, and the pads include a number of pads in the center region that are respectively connected to the number of fingers in the center region. Each busbar is connected to a respective pad group of some of the pad groups, and at least one pad group is disposed between two adjacent busbars.

An electrical connection is formed between first and second conductive elements, by inserting a nano-metal material between the first and second conductive elements; and heating the nano-metal material to a melting temperature to form the electrical connection between the first and second conductive elements. The nano-metal material may comprise a nano-metal paste or ink comprised of one or more of Gold (Au), Copper (Cu), Silver (Ag), and/or Aluminum (Al) nano-particles that melt or fuse into a solid to form the electrical connection, at a melting temperature of about 150-250 degrees C., and more preferably, about 175-225 degrees C. The electrical connection may be formed between a solar cell and a substrate by creating a via in the solar cell between a front and back side of the solar cell, wherein the via is connected to a contact on the front side of the solar cell and a trace on the substrate.

A solar cell includes a silicon substrate, a first doped region, and a second doped region. The first doped region includes a first passivated contact region on the silicon substrate and a second passivated contact region on the first passivated contact region. The first passivated contact region includes a first doped layer, a first passivation layer, and a second doped layer. The second passivated contact region includes a second passivation layer and a third doped layer. The second doped region includes a third passivation layer. Each of the first and third passivation layers includes a porous structure. One of the first and second doped regions is a P-type doped region, the other of the first and second doped regions is an N-type doped region, and a hole density of a corresponding passivation layer in the P-type doped region is greater than that in the N-type doped region.